Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition
The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism...
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| Veröffentlicht in: | Proceedings of the National Academy of Sciences - PNAS 2010-03, Vol.107 (12), p.5272-5275 |
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| container_title | Proceedings of the National Academy of Sciences - PNAS |
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| creator | Kim, Tae-Hwan Angst, M Hu, B Jin, R Zhang, X.-G Wendelken, J.F Plummer, E.W Li, An-Ping |
| description | The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism remains in debate. By imaging phase domains with electron microscopy and interrogating individual domains in situ via electron transport spectroscopy in double-layered Sr₃(Ru₁₋xMnx)₂O₇ (x = 0 and 0.2), we show in real-space that the microscopic phase competition and the Mott-type metal-insulator transition are extremely sensitive to applied mechanical stress. The revealed dynamic phase evolution with applied stress provides the first direct evidence for the important role of strain effect in both phase separation and Mott metal-insulator transition due to strong electron-lattice coupling in correlated systems. |
| doi_str_mv | 10.1073/pnas.1000655107 |
| format | Article |
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(ORNL), Oak Ridge, TN (United States)</creatorcontrib><creatorcontrib>Center for Nanophase Materials Sciences</creatorcontrib><title>Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition</title><title>Proceedings of the National Academy of Sciences - PNAS</title><addtitle>Proc Natl Acad Sci U S A</addtitle><description>The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism remains in debate. 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The revealed dynamic phase evolution with applied stress provides the first direct evidence for the important role of strain effect in both phase separation and Mott metal-insulator transition due to strong electron-lattice coupling in correlated systems.</description><subject>Crystal lattices</subject><subject>Crystals</subject><subject>Electric fields</subject><subject>Electrical phases</subject><subject>Electron microscopes</subject><subject>Electrons</subject><subject>Energy gaps</subject><subject>Imaging</subject><subject>Insulation</subject><subject>MAGNETORESISTANCE</subject><subject>MANGANESE OXIDES</subject><subject>Materials</subject><subject>MATERIALS SCIENCE</subject><subject>Metals</subject><subject>Microscopy</subject><subject>PHASE STUDIES</subject><subject>PHASE TRANSFORMATIONS</subject><subject>Physical Sciences</subject><subject>RUTHENIUM OXIDES</subject><subject>STRAINS</subject><subject>Stripes</subject><subject>STRONTIUM OXIDES</subject><subject>SUPERCONDUCTIVITY</subject><subject>Transition temperature</subject><issn>0027-8424</issn><issn>1091-6490</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdksGP1CAUxonRuLOrZ09q9eKpLo-WQi8mZrPqJms86J4Jpa8zTFqoQE3876XOuKOeILzf-_geH4Q8A_oWqKguZ6dj3lHacJ4PHpAN0BbKpm7pQ7KhlIlS1qw-I-cx7jPWckkfkzNGGaUVsA3pbya9tW5baNcXk3Z2XkadrHeFH4q0w8L4aca0EjiiScE7a4p5pyPGwqEOv6HPPqViwqTH0rq4KvhcCNpFu2o9IY8GPUZ8elwvyN2H629Xn8rbLx9vrt7floZLSCVSKXhdd53QAJ1EY6racBDC1J3GruecIYWh6UQDTY-cd4MUrOm5lLLugFcX5N1Bd166CXuDLnsY1RzspMNP5bVV_1ac3amt_6GY5CCZzAKvDgI-JquisQnNznjn8uSqFTUDyMyb4yXBf18wJjXZaHActUO_RCWqStIG2pV8_R-590tw-QUUo1Cxildthi4PkAk-xoDDvV2gas1YrRmrU8a548XfU97zf0LNwMsjsHae5IQCpjgTK_H8QOxjTuqkwJv8cwQ9KQzaK70NNqq7r6tnChLaNpv4BdaswNc</recordid><startdate>20100323</startdate><enddate>20100323</enddate><creator>Kim, Tae-Hwan</creator><creator>Angst, M</creator><creator>Hu, B</creator><creator>Jin, R</creator><creator>Zhang, X.-G</creator><creator>Wendelken, J.F</creator><creator>Plummer, E.W</creator><creator>Li, An-Ping</creator><general>National Academy of Sciences</general><general>National Acad Sciences</general><scope>FBQ</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QG</scope><scope>7QL</scope><scope>7QP</scope><scope>7QR</scope><scope>7SN</scope><scope>7SS</scope><scope>7T5</scope><scope>7TK</scope><scope>7TM</scope><scope>7TO</scope><scope>7U9</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>H94</scope><scope>M7N</scope><scope>P64</scope><scope>RC3</scope><scope>7X8</scope><scope>OTOTI</scope><scope>5PM</scope></search><sort><creationdate>20100323</creationdate><title>Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition</title><author>Kim, Tae-Hwan ; Angst, M ; Hu, B ; Jin, R ; Zhang, X.-G ; Wendelken, J.F ; Plummer, E.W ; Li, An-Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c581t-e087544bb7a11b8ecc34c5177c4baebd552e01f6b7616de55bf8726d58884b153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Crystal lattices</topic><topic>Crystals</topic><topic>Electric fields</topic><topic>Electrical phases</topic><topic>Electron microscopes</topic><topic>Electrons</topic><topic>Energy gaps</topic><topic>Imaging</topic><topic>Insulation</topic><topic>MAGNETORESISTANCE</topic><topic>MANGANESE OXIDES</topic><topic>Materials</topic><topic>MATERIALS SCIENCE</topic><topic>Metals</topic><topic>Microscopy</topic><topic>PHASE STUDIES</topic><topic>PHASE TRANSFORMATIONS</topic><topic>Physical Sciences</topic><topic>RUTHENIUM OXIDES</topic><topic>STRAINS</topic><topic>Stripes</topic><topic>STRONTIUM OXIDES</topic><topic>SUPERCONDUCTIVITY</topic><topic>Transition temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae-Hwan</creatorcontrib><creatorcontrib>Angst, M</creatorcontrib><creatorcontrib>Hu, B</creatorcontrib><creatorcontrib>Jin, R</creatorcontrib><creatorcontrib>Zhang, X.-G</creatorcontrib><creatorcontrib>Wendelken, J.F</creatorcontrib><creatorcontrib>Plummer, E.W</creatorcontrib><creatorcontrib>Li, An-Ping</creatorcontrib><creatorcontrib>Oak Ridge National Lab. 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| source | Jstor Complete Legacy; PubMed Central; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Crystal lattices Crystals Electric fields Electrical phases Electron microscopes Electrons Energy gaps Imaging Insulation MAGNETORESISTANCE MANGANESE OXIDES Materials MATERIALS SCIENCE Metals Microscopy PHASE STUDIES PHASE TRANSFORMATIONS Physical Sciences RUTHENIUM OXIDES STRAINS Stripes STRONTIUM OXIDES SUPERCONDUCTIVITY Transition temperature |
| title | Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition |
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