Sputtered In2O3 and ITO thin films containing zirconium

Additions of Zr to In2O3 (IO) and In2O3:SnO2 (ITO) sputtered thin films are studied. We find that Zr allows IO-based films to maintain optical transparency as oxygen partial pressure in the sputter ambient decreases, and it also maintains high carrier concentration as the oxygen partial pressure inc...

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Veröffentlicht in:	Journal of applied physics 2009-04, Vol.105 (8)
Hauptverfasser:	Gessert, T. A., Yoshida, Y., Fesenmaier, C. C., Coutts, T. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	APPROXIMATIONS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DEPOSITION DIELECTRIC MATERIALS MATERIALS SCIENCE OXIDES OXYGEN PARTIAL PRESSURE PERMITTIVITY SOLAR ENERGY Solar Energy - Photovoltaics THIN FILMS ZIRCONIUM
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