Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides
Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2009-06, Vol.18 (Supp1) |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Lucovsky, G. Luning, J. Fleming, L.B. Ulrich, M.D. Rowe, J.E. Seo, H. Lee, S. Lysaght, P. Bersuker, G. |
| description | Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, |
| format | Article |
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Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><language>eng</language><publisher>United States</publisher><subject>DEFECTS ; DIELECTRIC MATERIALS ; ELECTRONS ; GRAIN BOUNDARIES ; HAFNIUM OXIDES ; HOLES ; MATERIALS SCIENCE ; Other,OTHER ; OXIDES ; SILICATES ; SILICON ; SILICON NITRIDES ; SILICON OXIDES ; STACKS ; SUBSTRATES ; THIN FILMS ; TRANSITION ELEMENTS ; TRAPPING ; TRAPS ; VACANCIES ; X-RAY SPECTROSCOPY</subject><ispartof>Journal of materials science. 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Materials in electronics</title><description>Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.</description><subject>DEFECTS</subject><subject>DIELECTRIC MATERIALS</subject><subject>ELECTRONS</subject><subject>GRAIN BOUNDARIES</subject><subject>HAFNIUM OXIDES</subject><subject>HOLES</subject><subject>MATERIALS SCIENCE</subject><subject>Other,OTHER</subject><subject>OXIDES</subject><subject>SILICATES</subject><subject>SILICON</subject><subject>SILICON NITRIDES</subject><subject>SILICON OXIDES</subject><subject>STACKS</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>TRANSITION ELEMENTS</subject><subject>TRAPPING</subject><subject>TRAPS</subject><subject>VACANCIES</subject><subject>X-RAY SPECTROSCOPY</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNzE0KwjAQQOEgCtafO4wHCNQmse1aK26kixZxV0Ka4khJSieC3t4uPICrt_l4MxbtVSq4zJL7nEVxrlIuVZIs2YroGcfxQYosYkU1WBNGT8YPaKAKrxYtge-g5DdttDMfONluMgTooB61IwzoHVxt0D2Ub2wtbdii0z3Z7a9rtjsX9fHCPQVsyGCw5mG8c9OnyZXI5V78Y76RGzue</recordid><startdate>20090603</startdate><enddate>20090603</enddate><creator>Lucovsky, G.</creator><creator>Luning, J.</creator><creator>Fleming, L.B.</creator><creator>Ulrich, M.D.</creator><creator>Rowe, J.E.</creator><creator>Seo, H.</creator><creator>Lee, S.</creator><creator>Lysaght, P.</creator><creator>Bersuker, G.</creator><scope>OTOTI</scope></search><sort><creationdate>20090603</creationdate><title>Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides</title><author>Lucovsky, G. ; Luning, J. ; Fleming, L.B. ; Ulrich, M.D. ; Rowe, J.E. ; Seo, H. ; Lee, S. ; Lysaght, P. ; Bersuker, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_9539413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>DEFECTS</topic><topic>DIELECTRIC MATERIALS</topic><topic>ELECTRONS</topic><topic>GRAIN BOUNDARIES</topic><topic>HAFNIUM OXIDES</topic><topic>HOLES</topic><topic>MATERIALS SCIENCE</topic><topic>Other,OTHER</topic><topic>OXIDES</topic><topic>SILICATES</topic><topic>SILICON</topic><topic>SILICON NITRIDES</topic><topic>SILICON OXIDES</topic><topic>STACKS</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>TRANSITION ELEMENTS</topic><topic>TRAPPING</topic><topic>TRAPS</topic><topic>VACANCIES</topic><topic>X-RAY SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lucovsky, G.</creatorcontrib><creatorcontrib>Luning, J.</creatorcontrib><creatorcontrib>Fleming, L.B.</creatorcontrib><creatorcontrib>Ulrich, M.D.</creatorcontrib><creatorcontrib>Rowe, J.E.</creatorcontrib><creatorcontrib>Seo, H.</creatorcontrib><creatorcontrib>Lee, S.</creatorcontrib><creatorcontrib>Lysaght, P.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Stanford Linear Accelerator Center (SLAC)</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lucovsky, G.</au><au>Luning, J.</au><au>Fleming, L.B.</au><au>Ulrich, M.D.</au><au>Rowe, J.E.</au><au>Seo, H.</au><au>Lee, S.</au><au>Lysaght, P.</au><au>Bersuker, G.</au><aucorp>Stanford Linear Accelerator Center (SLAC)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2009-06-03</date><risdate>2009</risdate><volume>18</volume><issue>Supp1</issue><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.</abstract><cop>United States</cop></addata></record> |
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| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2009-06, Vol.18 (Supp1) |
| issn | 0957-4522 1573-482X |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | DEFECTS DIELECTRIC MATERIALS ELECTRONS GRAIN BOUNDARIES HAFNIUM OXIDES HOLES MATERIALS SCIENCE Other,OTHER OXIDES SILICATES SILICON SILICON NITRIDES SILICON OXIDES STACKS SUBSTRATES THIN FILMS TRANSITION ELEMENTS TRAPPING TRAPS VACANCIES X-RAY SPECTROSCOPY |
| title | Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides |
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