Conformal ZnO coatings on high surface area silica gel using atomic layer deposition
Silica gel is a mesoporous form of silica with a high specific surface area that is widely used as a support material for heterogeneous catalysis. In this study, we use atomic layer deposition (ALD) methods to deposit ZnO layers onto silica gel supports. ZnO ALD was performed using alternating expos...
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description | Silica gel is a mesoporous form of silica with a high specific surface area that is widely used as a support material for heterogeneous catalysis. In this study, we use atomic layer deposition (ALD) methods to deposit ZnO layers onto silica gel supports. ZnO ALD was performed using alternating exposures of diethyl zinc (DEZ) and water to coat 1 g quantities of silica gel in a conventional viscous flow reactor. The coated materials were analyzed using weight gain, X-ray fluorescence, X-ray diffraction, energy dispersive X-ray analysis, and scanning and transmission electron microscopy. These measurements revealed that the silica gel support could be conformally coated using reactant exposure times of ∼
90 s. The ALD ZnO was amorphous for films deposited using <
5 ALD cycles, but became hexagonal, nanocrystalline ZnO for films deposited using >
5 ALD cycles. In addition to the ZnO films, we also discovered that metallic Zn was deposited in the silica gel using very large DEZ exposures and deposition temperatures >
150 °C. The metallic Zn phase begins to form as soon as the ZnO ALD surface reactions have saturated, indicating that the Zn growth is strongly dependent on the availability of excess DEZ precursor. |
doi_str_mv | 10.1016/j.tsf.2007.11.044 |
format | Article |
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90 s. The ALD ZnO was amorphous for films deposited using <
5 ALD cycles, but became hexagonal, nanocrystalline ZnO for films deposited using >
5 ALD cycles. In addition to the ZnO films, we also discovered that metallic Zn was deposited in the silica gel using very large DEZ exposures and deposition temperatures >
150 °C. The metallic Zn phase begins to form as soon as the ZnO ALD surface reactions have saturated, indicating that the Zn growth is strongly dependent on the availability of excess DEZ precursor.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2007.11.044</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Atomic layer deposition ; Catalysis ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; DEPOSITION ; Exact sciences and technology ; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; SILICA GEL ; Structure and morphology; thickness ; SUBSTRATES ; SURFACE AREA ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Vapor phase epitaxy; growth from vapor phase ; ZINC ; ZINC OXIDES ; ZnO</subject><ispartof>Thin solid films, 2008-07, Vol.516 (18), p.6158-6166</ispartof><rights>2007</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-43ade47c72082ce94ddf4481b6ea32b818a1b483b27520687abbe9bb5aa3e7553</citedby><cites>FETCH-LOGICAL-c353t-43ade47c72082ce94ddf4481b6ea32b818a1b483b27520687abbe9bb5aa3e7553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2007.11.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,315,781,785,886,3551,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20474516$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/939075$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Libera, J.A.</creatorcontrib><creatorcontrib>Elam, J.W.</creatorcontrib><creatorcontrib>Pellin, M.J.</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><title>Conformal ZnO coatings on high surface area silica gel using atomic layer deposition</title><title>Thin solid films</title><description>Silica gel is a mesoporous form of silica with a high specific surface area that is widely used as a support material for heterogeneous catalysis. In this study, we use atomic layer deposition (ALD) methods to deposit ZnO layers onto silica gel supports. ZnO ALD was performed using alternating exposures of diethyl zinc (DEZ) and water to coat 1 g quantities of silica gel in a conventional viscous flow reactor. The coated materials were analyzed using weight gain, X-ray fluorescence, X-ray diffraction, energy dispersive X-ray analysis, and scanning and transmission electron microscopy. These measurements revealed that the silica gel support could be conformally coated using reactant exposure times of ∼
90 s. The ALD ZnO was amorphous for films deposited using <
5 ALD cycles, but became hexagonal, nanocrystalline ZnO for films deposited using >
5 ALD cycles. In addition to the ZnO films, we also discovered that metallic Zn was deposited in the silica gel using very large DEZ exposures and deposition temperatures >
150 °C. The metallic Zn phase begins to form as soon as the ZnO ALD surface reactions have saturated, indicating that the Zn growth is strongly dependent on the availability of excess DEZ precursor.</description><subject>Atomic layer deposition</subject><subject>Catalysis</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>DEPOSITION</subject><subject>Exact sciences and technology</subject><subject>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>SILICA GEL</subject><subject>Structure and morphology; thickness</subject><subject>SUBSTRATES</subject><subject>SURFACE AREA</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><subject>ZINC</subject><subject>ZINC OXIDES</subject><subject>ZnO</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kD1P5DAQhq0TSCzL_QA6X0GZMP5InIgKreDuJCQaaK6xJs5k16usvbIDEv-eRHuipJrmeWfeeRi7FlAKEPXtvpzyUEoAUwpRgtY_2Eo0pi2kUeKMrQA0FDW0cMEuc94DgJBSrdjLJoYhpgOO_F945i7i5MM28xj4zm93PL-lAR1xTIQ8-9E75Fsa-VueMY5TPHjHR_ygxHs6xuwnH8MVOx9wzPTz_1yz18eHl82f4un599_N_VPhVKWmQivsSRtnJDTSUav7ftC6EV1NqGTXiAZFpxvVSVNJqBuDXUdt11WIikxVqTX7ddob8-Rtdn4it3MxBHKTbVULZmHEiXEp5pxosMfkD5g-rAC7qLN7O6uzizorhJ3VzZmbU-aI2eE4JAzO56-gBG10JeqZuztxND_57iktHSg46n1aKvTRf3PlE_ckg98</recordid><startdate>20080731</startdate><enddate>20080731</enddate><creator>Libera, J.A.</creator><creator>Elam, J.W.</creator><creator>Pellin, M.J.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20080731</creationdate><title>Conformal ZnO coatings on high surface area silica gel using atomic layer deposition</title><author>Libera, J.A. ; Elam, J.W. ; Pellin, M.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-43ade47c72082ce94ddf4481b6ea32b818a1b483b27520687abbe9bb5aa3e7553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Atomic layer deposition</topic><topic>Catalysis</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>DEPOSITION</topic><topic>Exact sciences and technology</topic><topic>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>SILICA GEL</topic><topic>Structure and morphology; thickness</topic><topic>SUBSTRATES</topic><topic>SURFACE AREA</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><topic>ZINC</topic><topic>ZINC OXIDES</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Libera, J.A.</creatorcontrib><creatorcontrib>Elam, J.W.</creatorcontrib><creatorcontrib>Pellin, M.J.</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Libera, J.A.</au><au>Elam, J.W.</au><au>Pellin, M.J.</au><aucorp>Argonne National Lab. (ANL), Argonne, IL (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conformal ZnO coatings on high surface area silica gel using atomic layer deposition</atitle><jtitle>Thin solid films</jtitle><date>2008-07-31</date><risdate>2008</risdate><volume>516</volume><issue>18</issue><spage>6158</spage><epage>6166</epage><pages>6158-6166</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Silica gel is a mesoporous form of silica with a high specific surface area that is widely used as a support material for heterogeneous catalysis. In this study, we use atomic layer deposition (ALD) methods to deposit ZnO layers onto silica gel supports. ZnO ALD was performed using alternating exposures of diethyl zinc (DEZ) and water to coat 1 g quantities of silica gel in a conventional viscous flow reactor. The coated materials were analyzed using weight gain, X-ray fluorescence, X-ray diffraction, energy dispersive X-ray analysis, and scanning and transmission electron microscopy. These measurements revealed that the silica gel support could be conformally coated using reactant exposure times of ∼
90 s. The ALD ZnO was amorphous for films deposited using <
5 ALD cycles, but became hexagonal, nanocrystalline ZnO for films deposited using >
5 ALD cycles. In addition to the ZnO films, we also discovered that metallic Zn was deposited in the silica gel using very large DEZ exposures and deposition temperatures >
150 °C. The metallic Zn phase begins to form as soon as the ZnO ALD surface reactions have saturated, indicating that the Zn growth is strongly dependent on the availability of excess DEZ precursor.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2007.11.044</doi><tpages>9</tpages></addata></record> |
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subjects | Atomic layer deposition Catalysis Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology DEPOSITION Exact sciences and technology INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY Materials science Methods of deposition of films and coatings film growth and epitaxy Physics SILICA GEL Structure and morphology thickness SUBSTRATES SURFACE AREA Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Vapor phase epitaxy growth from vapor phase ZINC ZINC OXIDES ZnO |
title | Conformal ZnO coatings on high surface area silica gel using atomic layer deposition |
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