Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces
We report results of a surface modification process for (1 0 0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP)-induced surface damage and replaces the native oxide with an engineered surface oxide, the composition of which depends on the reactive gas...
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| Veröffentlicht in: | Journal of crystal growth 2008-04, Vol.310 (7), p.1619-1626 |
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| container_title | Journal of crystal growth |
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| creator | Krishnaswami, Kannan Vangala, Shivashankar R. Dauplaise, Helen M. Allen, Lisa P. Dallas, Gordon Bakken, Daniel Bliss, David F. Goodhue, William D. |
| description | We report results of a surface modification process for (1
0
0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP)-induced surface damage and replaces the native oxide with an engineered surface oxide, the composition of which depends on the reactive gas employed. X-ray photoelectron spectroscopy of O
2-, CF
4/O
2-, and HBr-GCIB surface oxides is presented indicating the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, that desorb at temperatures ranging 530–560
°C. Cross-sectional transmission electron microscopy of molecular-beam epitaxy grown GaSb/AlGaSb layers showed that the HBr-GCIB surface produced a smooth dislocation-free substrate-to-epi transition with no discernable interface. Topography of epi surfaces, using atomic force microscopy, showed that GCIB surfaces resulted in characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large-scale manufacturing process to produce epi-ready GaSb substrates. |
| doi_str_mv | 10.1016/j.jcrysgro.2007.11.225 |
| format | Article |
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0
0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP)-induced surface damage and replaces the native oxide with an engineered surface oxide, the composition of which depends on the reactive gas employed. X-ray photoelectron spectroscopy of O
2-, CF
4/O
2-, and HBr-GCIB surface oxides is presented indicating the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, that desorb at temperatures ranging 530–560
°C. Cross-sectional transmission electron microscopy of molecular-beam epitaxy grown GaSb/AlGaSb layers showed that the HBr-GCIB surface produced a smooth dislocation-free substrate-to-epi transition with no discernable interface. Topography of epi surfaces, using atomic force microscopy, showed that GCIB surfaces resulted in characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large-scale manufacturing process to produce epi-ready GaSb substrates.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.11.225</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Gas cluster ion beam ; A1. Surface processes ; A3. Molecular beam epitaxy ; ATOMIC FORCE MICROSCOPY ; B1. Antimonides ; B1. Surface oxides ; B2. GaSb ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; DEFECTS ; Defects and impurities in crystals; microstructure ; DESORPTION ; DISLOCATIONS ; Electron, ion, and scanning probe microscopy ; Exact sciences and technology ; gas cluster ion beam ; GaSb ; ION BEAMS ; Linear defects: dislocations, disclinations ; MANUFACTURING ; MATERIALS SCIENCE ; MECHANICAL POLISHING ; Methods of deposition of films and coatings; film growth and epitaxy ; MODIFICATIONS ; MOLECULAR BEAM EPITAXY ; Molecular, atomic, ion, and chemical beam epitaxy ; MONOCRYSTALS ; OXIDES ; Physics ; Scanning auger microscopy, photoelectron microscopy ; Structure of solids and liquids; crystallography ; SUBSTRATES ; surface oxides ; TRANSMISSION ELECTRON MICROSCOPY ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Journal of crystal growth, 2008-04, Vol.310 (7), p.1619-1626</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-cdc898171c8709e0ff7cce084f197000c61b28494f4d376c2979cb51f12a6ec43</citedby><cites>FETCH-LOGICAL-c399t-cdc898171c8709e0ff7cce084f197000c61b28494f4d376c2979cb51f12a6ec43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2007.11.225$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,780,784,885,3541,27915,27916,45986</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20268411$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/927704$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Krishnaswami, Kannan</creatorcontrib><creatorcontrib>Vangala, Shivashankar R.</creatorcontrib><creatorcontrib>Dauplaise, Helen M.</creatorcontrib><creatorcontrib>Allen, Lisa P.</creatorcontrib><creatorcontrib>Dallas, Gordon</creatorcontrib><creatorcontrib>Bakken, Daniel</creatorcontrib><creatorcontrib>Bliss, David F.</creatorcontrib><creatorcontrib>Goodhue, William D.</creatorcontrib><creatorcontrib>Pacific Northwest National Lab. (PNNL), Richland, WA (United States)</creatorcontrib><title>Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces</title><title>Journal of crystal growth</title><description>We report results of a surface modification process for (1
0
0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP)-induced surface damage and replaces the native oxide with an engineered surface oxide, the composition of which depends on the reactive gas employed. X-ray photoelectron spectroscopy of O
2-, CF
4/O
2-, and HBr-GCIB surface oxides is presented indicating the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, that desorb at temperatures ranging 530–560
°C. Cross-sectional transmission electron microscopy of molecular-beam epitaxy grown GaSb/AlGaSb layers showed that the HBr-GCIB surface produced a smooth dislocation-free substrate-to-epi transition with no discernable interface. Topography of epi surfaces, using atomic force microscopy, showed that GCIB surfaces resulted in characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large-scale manufacturing process to produce epi-ready GaSb substrates.</description><subject>A1. Gas cluster ion beam</subject><subject>A1. Surface processes</subject><subject>A3. Molecular beam epitaxy</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>B1. Antimonides</subject><subject>B1. Surface oxides</subject><subject>B2. GaSb</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>DEFECTS</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>DESORPTION</subject><subject>DISLOCATIONS</subject><subject>Electron, ion, and scanning probe microscopy</subject><subject>Exact sciences and technology</subject><subject>gas cluster ion beam</subject><subject>GaSb</subject><subject>ION BEAMS</subject><subject>Linear defects: dislocations, disclinations</subject><subject>MANUFACTURING</subject><subject>MATERIALS SCIENCE</subject><subject>MECHANICAL POLISHING</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MODIFICATIONS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>MONOCRYSTALS</subject><subject>OXIDES</subject><subject>Physics</subject><subject>Scanning auger microscopy, photoelectron microscopy</subject><subject>Structure of solids and liquids; crystallography</subject><subject>SUBSTRATES</subject><subject>surface oxides</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkUFv1DAQhSMEEkvLX0DmALekHicbx5xAFZRKrTi0PVvOZFK8ysapJyndf4_DFq5cZjTy92ae_LLsHcgCJNRnu2KH8cD3MRRKSl0AFEptX2QbaHSZb6VUL7NNqiqXqmpeZ2-Yd1ImJchN9nAdBsJlcFG05PaCJj-7p4MIo7h3LHBYeKYofJrX93yKNLlInbhwN63gpeU5upn4k7gNv1zsWPj9FMNjIniJvUNi4cZO-DGt-TOeZq96NzC9fe4n2d23r7fn3_OrHxeX51-uciyNmXPssDENaMBGS0Oy7zUiyabqwehkH2toVVOZqq-6UteojDbYbqEH5WrCqjzJ3h_3Bp69ZfQz4U8M40g4W6O0livz8cgkyw8L8Wz3npGGwY0UFrZlKWFbmzqB9RHEGJgj9XaKfu_iwYK0awp2Z_-mYNcULIBNKSThh-cLjtENfXQjev6nVlLVTQWQuM9HjtKXPHqKq2MakTofV8Nd8P879Rs0gKJr</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Krishnaswami, Kannan</creator><creator>Vangala, Shivashankar R.</creator><creator>Dauplaise, Helen M.</creator><creator>Allen, Lisa P.</creator><creator>Dallas, Gordon</creator><creator>Bakken, Daniel</creator><creator>Bliss, David F.</creator><creator>Goodhue, William D.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>20080401</creationdate><title>Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces</title><author>Krishnaswami, Kannan ; Vangala, Shivashankar R. ; Dauplaise, Helen M. ; Allen, Lisa P. ; Dallas, Gordon ; Bakken, Daniel ; Bliss, David F. ; Goodhue, William D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-cdc898171c8709e0ff7cce084f197000c61b28494f4d376c2979cb51f12a6ec43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Gas cluster ion beam</topic><topic>A1. Surface processes</topic><topic>A3. Molecular beam epitaxy</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>B1. Antimonides</topic><topic>B1. Surface oxides</topic><topic>B2. GaSb</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>DEFECTS</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>DESORPTION</topic><topic>DISLOCATIONS</topic><topic>Electron, ion, and scanning probe microscopy</topic><topic>Exact sciences and technology</topic><topic>gas cluster ion beam</topic><topic>GaSb</topic><topic>ION BEAMS</topic><topic>Linear defects: dislocations, disclinations</topic><topic>MANUFACTURING</topic><topic>MATERIALS SCIENCE</topic><topic>MECHANICAL POLISHING</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>MODIFICATIONS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>MONOCRYSTALS</topic><topic>OXIDES</topic><topic>Physics</topic><topic>Scanning auger microscopy, photoelectron microscopy</topic><topic>Structure of solids and liquids; crystallography</topic><topic>SUBSTRATES</topic><topic>surface oxides</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krishnaswami, Kannan</creatorcontrib><creatorcontrib>Vangala, Shivashankar R.</creatorcontrib><creatorcontrib>Dauplaise, Helen M.</creatorcontrib><creatorcontrib>Allen, Lisa P.</creatorcontrib><creatorcontrib>Dallas, Gordon</creatorcontrib><creatorcontrib>Bakken, Daniel</creatorcontrib><creatorcontrib>Bliss, David F.</creatorcontrib><creatorcontrib>Goodhue, William D.</creatorcontrib><creatorcontrib>Pacific Northwest National Lab. (PNNL), Richland, WA (United States)</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krishnaswami, Kannan</au><au>Vangala, Shivashankar R.</au><au>Dauplaise, Helen M.</au><au>Allen, Lisa P.</au><au>Dallas, Gordon</au><au>Bakken, Daniel</au><au>Bliss, David F.</au><au>Goodhue, William D.</au><aucorp>Pacific Northwest National Lab. (PNNL), Richland, WA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>310</volume><issue>7</issue><spage>1619</spage><epage>1626</epage><pages>1619-1626</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We report results of a surface modification process for (1
0
0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP)-induced surface damage and replaces the native oxide with an engineered surface oxide, the composition of which depends on the reactive gas employed. X-ray photoelectron spectroscopy of O
2-, CF
4/O
2-, and HBr-GCIB surface oxides is presented indicating the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, that desorb at temperatures ranging 530–560
°C. Cross-sectional transmission electron microscopy of molecular-beam epitaxy grown GaSb/AlGaSb layers showed that the HBr-GCIB surface produced a smooth dislocation-free substrate-to-epi transition with no discernable interface. Topography of epi surfaces, using atomic force microscopy, showed that GCIB surfaces resulted in characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large-scale manufacturing process to produce epi-ready GaSb substrates.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.11.225</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of crystal growth, 2008-04, Vol.310 (7), p.1619-1626 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_osti_scitechconnect_927704 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Gas cluster ion beam A1. Surface processes A3. Molecular beam epitaxy ATOMIC FORCE MICROSCOPY B1. Antimonides B1. Surface oxides B2. GaSb Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology DEFECTS Defects and impurities in crystals microstructure DESORPTION DISLOCATIONS Electron, ion, and scanning probe microscopy Exact sciences and technology gas cluster ion beam GaSb ION BEAMS Linear defects: dislocations, disclinations MANUFACTURING MATERIALS SCIENCE MECHANICAL POLISHING Methods of deposition of films and coatings film growth and epitaxy MODIFICATIONS MOLECULAR BEAM EPITAXY Molecular, atomic, ion, and chemical beam epitaxy MONOCRYSTALS OXIDES Physics Scanning auger microscopy, photoelectron microscopy Structure of solids and liquids crystallography SUBSTRATES surface oxides TRANSMISSION ELECTRON MICROSCOPY X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces |
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