Stark tuning of donor electron spins in silicon

Stark tuning of donor electron spins in silicon

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between...

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Veröffentlicht in:Physical review letters 2006-10, Vol.97 (17), p.176404-176404, Article 176404
Hauptverfasser: Bradbury, F R, Tyryshkin, A M, Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, Lyon, S A
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75
ELECTRIC FIELDS
ELECTRON SPIN RESONANCE
ELECTRONS
MAGNETIC FIELDS
SILICON
STARK EFFECT
TUNING
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container_end_page 176404
container_issue 17
container_start_page 176404
container_title Physical review letters
container_volume 97
creator Bradbury, F R
Tyryshkin, A M
Sabouret, Guillaume
Bokor, Jeff
Schenkel, Thomas
Lyon, S A
description We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.
doi_str_mv 10.1103/physrevlett.97.176404
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ELECTRIC FIELDS
ELECTRON SPIN RESONANCE
ELECTRONS
MAGNETIC FIELDS
SILICON
STARK EFFECT
TUNING
title Stark tuning of donor electron spins in silicon
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