Large melting point hysteresis of Ge nanocrystals embedded inSiO2

Large melting point hysteresis of Ge nanocrystals embedded inSiO2

The melting behavior of Ge nanocrystals embedded within SiO{sub 2} is evaluated using in situ transmission electron microscopy. The observed melting point hysteresis is large ({+-} 17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleat...

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Veröffentlicht in:Physical review letters 2006-05, Vol.97 (15)
Hauptverfasser: Xu, Q., Sharp, I.D., Yuan, C.W., Yi, D.O., Liao, C.Y., Glaeser,A.M., Minor, A.M., Beeman, J.W., Ridgway, M.C., Kluth, P., Ager III,J.W., Chrzan, D.C., Haller, E.E.
Format: Artikel
Sprache:eng
Schlagworte:
36
EPITAXY
HYSTERESIS
MELTING
MELTING POINTS
NUCLEATION
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:The melting behavior of Ge nanocrystals embedded within SiO{sub 2} is evaluated using in situ transmission electron microscopy. The observed melting point hysteresis is large ({+-} 17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.97.155701