Atomic structure of defects in GaN:Mg grown with Ga polarity

The atomic structure of characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities within the defects...

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Veröffentlicht in:	Physical review letters 2004-11, Vol.93 (20), p.206102.1-206102.4, Article 206102
Hauptverfasser:	LILIENTAL-WEBER, Z, TOMASZEWICZ, T, ZAKHAROV, D, JASINSKI, J, O'KEEFE, M. A
Format:	Artikel
Sprache:	eng
Schlagworte:	CAVITIES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: structure, mechanical and thermal properties DEFECTS Defects and impurities: doping, implantation, distribution, concentration, etc ELECTRON MICROSCOPES ELECTRONS ENERGY-LOSS SPECTROSCOPY Exact sciences and technology GaN:Mg pyramidal defects atomic structure OXYGEN Physics RESOLUTION SHAPE Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology THIN FILMS
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