n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

In this paper, a study of germanium as n-type dopant in plasma-assisted molecular beam epitaxy of GaN is presented. The germanium incorporation is studied as a function of the germanium effusion cell temperature and growth temperature of the GaN layer. The influence of the doping concentration on th...

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Veröffentlicht in:	Journal of crystal growth 2004-06, Vol.267 (1), p.123-128
Hauptverfasser:	Hageman, P.R., Schaff, W.J., Janinski, Jacek, Liliental-Weber, Zuzanna
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A3. Molecular beam epitaxy B1. Gallium compounds B2. Semiconducting gallium compounds Cross-disciplinary physics: materials science rheology Exact sciences and technology GERMANIUM LAWRENCE BERKELEY LABORATORY MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy MOLECULAR BEAM EPITAXY Molecular, atomic, ion, and chemical beam epitaxy Physics
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