Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC
Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n/sup +/-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and...
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| Veröffentlicht in: | IEEE transactions on electron devices 2001-12, Vol.48 (12), p.2665-2670 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 48 |
| creator | Tucker, J.B. Rao, M.V. Papanicolaou, N.A. Mittereder, J. Elasser, A. Clock, A.W. Ghezzo, M. Holland, O.W. Jones, K.A. |
| description | Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n/sup +/-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5/spl times/10/sup -8/ A/cm/sup 2/ at a reverse bias of -20 V and a carrier lifetime of 7.4 ns. |
| doi_str_mv | 10.1109/16.974687 |
| format | Article |
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Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. 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Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5/spl times/10/sup -8/ A/cm/sup 2/ at a reverse bias of -20 V and a carrier lifetime of 7.4 ns.</description><subject>ELECTRICAL PROPERTIES</subject><subject>HYDRIDES</subject><subject>ION IMPLANTATION</subject><subject>JUNCTION DIODES</subject><subject>MATERIALS SCIENCE</subject><subject>SILICON CARBIDES</subject><subject>Silicon compounds</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0juPFDEMAOAIgcRyUNBSBQpOFHMkmcRJytMK7pBOouDRRjOJo8tqd7IkM8X9e7LMiYKCrSzLn2zLMiGvObvinNmPHK6slmD0E7LhSunOgoSnZMMYN53tTf-cvKh111KQUmzIz-39UAY_Y0l1Tr7SHOlxP0xDoVN3pLtl8nPKEw0pB6z0MASk4wMNeRn32KXDyc7DiVSapjlTedt9S9uX5Fkc9hVfPcYL8uPzp-_b2-7u682X7fVd56VSc-fFqOIomdWGg9UsjkELJkLPo2YwBsF7zrmWCFZaDLFJHIORcQSLUWN_Qd6ufXPb3lWfZvT3Pk8T-tkZYaxVzVyu5ljyrwXr7A6pety3zTEv1VkBwiroocn3_5XCCmGMtuehAaPkn9nnIJdKAz8PAZQwgjX47h-4y0uZ2pGdMdII4OLU7cOKfMm1FozuWNJhKA-OM3f6E8fBrX_S7JvVJkT86x6LvwFk4LUu</recordid><startdate>20011201</startdate><enddate>20011201</enddate><creator>Tucker, J.B.</creator><creator>Rao, M.V.</creator><creator>Papanicolaou, N.A.</creator><creator>Mittereder, J.</creator><creator>Elasser, A.</creator><creator>Clock, A.W.</creator><creator>Ghezzo, M.</creator><creator>Holland, O.W.</creator><creator>Jones, K.A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5/spl times/10/sup -8/ A/cm/sup 2/ at a reverse bias of -20 V and a carrier lifetime of 7.4 ns.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/16.974687</doi><tpages>6</tpages></addata></record> |
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| subjects | ELECTRICAL PROPERTIES HYDRIDES ION IMPLANTATION JUNCTION DIODES MATERIALS SCIENCE SILICON CARBIDES Silicon compounds |
| title | Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC |
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