Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxy

The growth of Ge(001) by molecular-beam epitaxy at temperatures Ts between 20 and 100 °C, and deposition rates of 0.5 and 1 Å s−1, was investigated using a combination of in situ reflection high-energy electron diffraction and post-deposition cross-sectional transmission electron microscopy. All fil...

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