Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films
Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which co...
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description | Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which correlate in energy and relative magnitude with the two superconducting Bi-Sr-Ca-Cu-O phases present in the film (110 and 85 K). The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier. |
doi_str_mv | 10.1103/PhysRevB.41.842 |
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S ; ROESLER, G. M ; TEDROW, P. M</creator><creatorcontrib>KUSSMAUL, A ; MOODERA, J. S ; ROESLER, G. M ; TEDROW, P. M</creatorcontrib><description>Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which correlate in energy and relative magnitude with the two superconducting Bi-Sr-Ca-Cu-O phases present in the film (110 and 85 K). The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier.</description><identifier>ISSN: 0163-1829</identifier><identifier>EISSN: 1095-3795</identifier><identifier>DOI: 10.1103/PhysRevB.41.842</identifier><identifier>PMID: 9992838</identifier><identifier>CODEN: PRBMDO</identifier><language>eng</language><publisher>Woodbury, NY: American Physical Society</publisher><subject>360204 - Ceramics, Cermets, & Refractories- Physical Properties ; 656100 - Condensed Matter Physics- Superconductivity ; ALKALINE EARTH METAL COMPOUNDS ; ALUMINIUM COMPOUNDS ; ALUMINIUM OXIDES ; ANNEALING ; Applied sciences ; BISMUTH COMPOUNDS ; BISMUTH OXIDES ; CALCIUM COMPOUNDS ; CALCIUM OXIDES ; CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COPPER COMPOUNDS ; COPPER OXIDES ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; Electronics ; Exact sciences and technology ; HEAT TREATMENTS ; Interfaces ; JUNCTIONS ; MATERIALS SCIENCE ; OXIDES ; OXYGEN COMPOUNDS ; PHYSICAL PROPERTIES ; QUASI PARTICLES ; Semiconductor electronics. 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S</creatorcontrib><creatorcontrib>ROESLER, G. M</creatorcontrib><creatorcontrib>TEDROW, P. M</creatorcontrib><title>Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films</title><title>Physical review. B, Condensed matter</title><addtitle>Phys Rev B Condens Matter</addtitle><description>Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which correlate in energy and relative magnitude with the two superconducting Bi-Sr-Ca-Cu-O phases present in the film (110 and 85 K). The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier.</description><subject>360204 - Ceramics, Cermets, & Refractories- Physical Properties</subject><subject>656100 - Condensed Matter Physics- Superconductivity</subject><subject>ALKALINE EARTH METAL COMPOUNDS</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ALUMINIUM OXIDES</subject><subject>ANNEALING</subject><subject>Applied sciences</subject><subject>BISMUTH COMPOUNDS</subject><subject>BISMUTH OXIDES</subject><subject>CALCIUM COMPOUNDS</subject><subject>CALCIUM OXIDES</subject><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COPPER COMPOUNDS</subject><subject>COPPER OXIDES</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEAT TREATMENTS</subject><subject>Interfaces</subject><subject>JUNCTIONS</subject><subject>MATERIALS SCIENCE</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PHYSICAL PROPERTIES</subject><subject>QUASI PARTICLES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>STRONTIUM COMPOUNDS</subject><subject>STRONTIUM OXIDES</subject><subject>SUPERCONDUCTING FILMS</subject><subject>SUPERCONDUCTING JUNCTIONS</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><issn>0163-1829</issn><issn>1095-3795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkMtLAzEQxoMotT7OnoQiCF7SZpLdbOZoiy8o1Oc5ZLNZG9nu1s2u0P_eSKvOZWC-33zMfIScARsDMDF5XG7Cs_uajhMYq4TvkSEwTKnIMN0nQwZSUFAcD8lRCB8sFpc4IANE5EqoIRFPvQl-bdrO28qNur6uXeXr95GvR1NPX1o6M3TW08WoW8ZR6atVOCEHpamCO931Y_J2e_M6u6fzxd3D7HpOLZeyo6V1mDHghWUiySw4kctESExYaQXyBG2aoMyFAmWFMzm6QrEirhqJWOS5OCYXW98mdF4H6ztnl7aJF9pOZ5yJFDBCV1to3TafvQudXvlgXVWZ2jV90KBS5BIgg4hOtqhtmxBaV-p161em3Whg-idN_ZumTkDHNOPG-c68z1eu-ON38UX9cqebYE1Vtqa2PvzbomIsPiy-AYvUe9k</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>KUSSMAUL, A</creator><creator>MOODERA, J. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>STRONTIUM COMPOUNDS</topic><topic>STRONTIUM OXIDES</topic><topic>SUPERCONDUCTING FILMS</topic><topic>SUPERCONDUCTING JUNCTIONS</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><toplevel>online_resources</toplevel><creatorcontrib>KUSSMAUL, A</creatorcontrib><creatorcontrib>MOODERA, J. S</creatorcontrib><creatorcontrib>ROESLER, G. M</creatorcontrib><creatorcontrib>TEDROW, P. M</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KUSSMAUL, A</au><au>MOODERA, J. S</au><au>ROESLER, G. M</au><au>TEDROW, P. M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films</atitle><jtitle>Physical review. B, Condensed matter</jtitle><addtitle>Phys Rev B Condens Matter</addtitle><date>1990</date><risdate>1990</risdate><volume>41</volume><issue>1</issue><spage>842</spage><epage>845</epage><pages>842-845</pages><issn>0163-1829</issn><eissn>1095-3795</eissn><coden>PRBMDO</coden><abstract>Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which correlate in energy and relative magnitude with the two superconducting Bi-Sr-Ca-Cu-O phases present in the film (110 and 85 K). The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier.</abstract><cop>Woodbury, NY</cop><pub>American Physical Society</pub><pmid>9992838</pmid><doi>10.1103/PhysRevB.41.842</doi><tpages>4</tpages></addata></record> |
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subjects | 360204 - Ceramics, Cermets, & Refractories- Physical Properties 656100 - Condensed Matter Physics- Superconductivity ALKALINE EARTH METAL COMPOUNDS ALUMINIUM COMPOUNDS ALUMINIUM OXIDES ANNEALING Applied sciences BISMUTH COMPOUNDS BISMUTH OXIDES CALCIUM COMPOUNDS CALCIUM OXIDES CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COPPER COMPOUNDS COPPER OXIDES ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronics Exact sciences and technology HEAT TREATMENTS Interfaces JUNCTIONS MATERIALS SCIENCE OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES QUASI PARTICLES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices STRONTIUM COMPOUNDS STRONTIUM OXIDES SUPERCONDUCTING FILMS SUPERCONDUCTING JUNCTIONS TRANSITION ELEMENT COMPOUNDS |
title | Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films |
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