Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films

Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which co...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1990, Vol.41 (1), p.842-845
Hauptverfasser: KUSSMAUL, A, MOODERA, J. S, ROESLER, G. M, TEDROW, P. M
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container_start_page 842
container_title Physical review. B, Condensed matter
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creator KUSSMAUL, A
MOODERA, J. S
ROESLER, G. M
TEDROW, P. M
description Tunnel junctions were formed by depositing a thin layer of Al{sub 2}O{sub 3}(20 A) and Al counter electrodes onto sputtered and annealed Bi-Sr-Ca-Cu-O films. Differential conductance spectra displayed low conductivity at low bias, and two pairs of peaks, symmetric with respect to zero bias, which correlate in energy and relative magnitude with the two superconducting Bi-Sr-Ca-Cu-O phases present in the film (110 and 85 K). The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier.
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The measured values of the peak positions and the reduced gap parameter are {Delta}{sub 1}=18--21 meV(85-K phase), {Delta}{sub 2}=25--28 meV (110-K phase), 2{Delta}/{ital k}{sub {ital B}}T{sub c}=5.5{plus minus}0.6 for both phases. The shape of the conductance curves at higher bias is parabolic. This effect can be explained by the presence of a composite barrier. Such a barrier is likely to be the result of insulating or semiconducting grain surfaces in addition to the artificial barrier.</abstract><cop>Woodbury, NY</cop><pub>American Physical Society</pub><pmid>9992838</pmid><doi>10.1103/PhysRevB.41.842</doi><tpages>4</tpages></addata></record>
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ispartof Physical review. B, Condensed matter, 1990, Vol.41 (1), p.842-845
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language eng
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source American Physical Society Journals
subjects 360204 - Ceramics, Cermets, & Refractories- Physical Properties
656100 - Condensed Matter Physics- Superconductivity
ALKALINE EARTH METAL COMPOUNDS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ANNEALING
Applied sciences
BISMUTH COMPOUNDS
BISMUTH OXIDES
CALCIUM COMPOUNDS
CALCIUM OXIDES
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER COMPOUNDS
COPPER OXIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronics
Exact sciences and technology
HEAT TREATMENTS
Interfaces
JUNCTIONS
MATERIALS SCIENCE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUASI PARTICLES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
title Quasiparticle tunneling in Bi-Sr-Ca-Cu-O thin films
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