Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied sta...

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Veröffentlicht in:IEEE journal of quantum electronics 1992-10, Vol.28 (10), p.2404-2415
Hauptverfasser: Fu, W.S., Harris, J.S., Binder, R., Koch, S.W., Klem, J.F., Olbright, G.R.
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container_end_page 2415
container_issue 10
container_start_page 2404
container_title IEEE journal of quantum electronics
container_volume 28
creator Fu, W.S.
Harris, J.S.
Binder, R.
Koch, S.W.
Klem, J.F.
Olbright, G.R.
description Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.< >
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_osti_scitechconnect_7181472</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>159547</ieee_id><sourcerecordid>28434350</sourcerecordid><originalsourceid>FETCH-LOGICAL-c302t-321937f2cafd1831e25b488c93d04a2f1851e2ebc312c86570f7dce17453c793</originalsourceid><addsrcrecordid>eNpF0EtLxDAQAOAgCq4P8OwpeBAvXTNNYtLjsvhYWPSyeA3Z7BQr3aabSRH_vZUKnoaZ-RhmhrErEHMAUd3LOehKK3PEZqC1LcCAPGYzIcAWFVTmlJ0RfY6pUlbM2Ptr7NqmQ5947HMTfMv7FHtMuUHivtvxoc3J154yT0h97Ah5rPmzX1CxaBfE83ePxWrFD4Pv8rDnX9i2dMFOat8SXv7Fc7Z5etwsX4r12_NquVgXQYoyF7KESpq6DL7egZWApd4qa0Mld0L5sgarxxpug4Qy2AdtRG12AcEoLYOp5Dm7mcZGyo2j0GQMHyF2HYbsDFhQphzR7YTGww4DUnb7hsK4pe8wDuRKq6SSWozwboIhRaKEtetTs_fp24Fwv8910k3PHen1RBtE_GdT8wey7nNi</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28434350</pqid></control><display><type>article</type><title>Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells</title><source>IEEE Electronic Library (IEL)</source><creator>Fu, W.S. ; Harris, J.S. ; Binder, R. ; Koch, S.W. ; Klem, J.F. ; Olbright, G.R.</creator><creatorcontrib>Fu, W.S. ; Harris, J.S. ; Binder, R. ; Koch, S.W. ; Klem, J.F. ; Olbright, G.R.</creatorcontrib><description>Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.&lt; &gt;</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.159547</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>360606 - Other Materials- Physical Properties- (1992-) ; 661200 - Techniques of General Use in Physics- (1992-) ; ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; AMPLIFICATION ; ANGULAR DISTRIBUTION ; ARSENIC COMPOUNDS ; ARSENIDES ; Charge carrier processes ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DISTRIBUTION ; ELECTRIC FIELDS ; Electron optics ; ELECTRONS ; ELEMENTARY PARTICLES ; EXCITONS ; FERMIONS ; GAIN ; Gallium arsenide ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HETEROJUNCTIONS ; HOLES ; JUNCTIONS ; Laser theory ; LASERS ; LEPTONS ; MATERIALS SCIENCE ; NONLINEAR OPTICS ; Optical devices ; Optical superlattices ; OPTICS ; PNICTIDES ; Quantum well lasers ; QUASI PARTICLES ; RESONANCE ; SEMICONDUCTOR JUNCTIONS ; Semiconductor lasers ; SEPARATION PROCESSES ; Ultrafast optics</subject><ispartof>IEEE journal of quantum electronics, 1992-10, Vol.28 (10), p.2404-2415</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c302t-321937f2cafd1831e25b488c93d04a2f1851e2ebc312c86570f7dce17453c793</citedby><cites>FETCH-LOGICAL-c302t-321937f2cafd1831e25b488c93d04a2f1851e2ebc312c86570f7dce17453c793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/159547$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/159547$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/7181472$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Fu, W.S.</creatorcontrib><creatorcontrib>Harris, J.S.</creatorcontrib><creatorcontrib>Binder, R.</creatorcontrib><creatorcontrib>Koch, S.W.</creatorcontrib><creatorcontrib>Klem, J.F.</creatorcontrib><creatorcontrib>Olbright, G.R.</creatorcontrib><title>Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.&lt; &gt;</description><subject>360606 - Other Materials- Physical Properties- (1992-)</subject><subject>661200 - Techniques of General Use in Physics- (1992-)</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>AMPLIFICATION</subject><subject>ANGULAR DISTRIBUTION</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>Charge carrier processes</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DISTRIBUTION</subject><subject>ELECTRIC FIELDS</subject><subject>Electron optics</subject><subject>ELECTRONS</subject><subject>ELEMENTARY PARTICLES</subject><subject>EXCITONS</subject><subject>FERMIONS</subject><subject>GAIN</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HETEROJUNCTIONS</subject><subject>HOLES</subject><subject>JUNCTIONS</subject><subject>Laser theory</subject><subject>LASERS</subject><subject>LEPTONS</subject><subject>MATERIALS SCIENCE</subject><subject>NONLINEAR OPTICS</subject><subject>Optical devices</subject><subject>Optical superlattices</subject><subject>OPTICS</subject><subject>PNICTIDES</subject><subject>Quantum well lasers</subject><subject>QUASI PARTICLES</subject><subject>RESONANCE</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>Semiconductor lasers</subject><subject>SEPARATION PROCESSES</subject><subject>Ultrafast optics</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNpF0EtLxDAQAOAgCq4P8OwpeBAvXTNNYtLjsvhYWPSyeA3Z7BQr3aabSRH_vZUKnoaZ-RhmhrErEHMAUd3LOehKK3PEZqC1LcCAPGYzIcAWFVTmlJ0RfY6pUlbM2Ptr7NqmQ5947HMTfMv7FHtMuUHivtvxoc3J154yT0h97Ah5rPmzX1CxaBfE83ePxWrFD4Pv8rDnX9i2dMFOat8SXv7Fc7Z5etwsX4r12_NquVgXQYoyF7KESpq6DL7egZWApd4qa0Mld0L5sgarxxpug4Qy2AdtRG12AcEoLYOp5Dm7mcZGyo2j0GQMHyF2HYbsDFhQphzR7YTGww4DUnb7hsK4pe8wDuRKq6SSWozwboIhRaKEtetTs_fp24Fwv8910k3PHen1RBtE_GdT8wey7nNi</recordid><startdate>19921001</startdate><enddate>19921001</enddate><creator>Fu, W.S.</creator><creator>Harris, J.S.</creator><creator>Binder, R.</creator><creator>Koch, S.W.</creator><creator>Klem, J.F.</creator><creator>Olbright, G.R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19921001</creationdate><title>Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells</title><author>Fu, W.S. ; Harris, J.S. ; Binder, R. ; Koch, S.W. ; Klem, J.F. ; Olbright, G.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c302t-321937f2cafd1831e25b488c93d04a2f1851e2ebc312c86570f7dce17453c793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>360606 - Other Materials- Physical Properties- (1992-)</topic><topic>661200 - Techniques of General Use in Physics- (1992-)</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>AMPLIFICATION</topic><topic>ANGULAR DISTRIBUTION</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>Charge carrier processes</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DISTRIBUTION</topic><topic>ELECTRIC FIELDS</topic><topic>Electron optics</topic><topic>ELECTRONS</topic><topic>ELEMENTARY PARTICLES</topic><topic>EXCITONS</topic><topic>FERMIONS</topic><topic>GAIN</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HETEROJUNCTIONS</topic><topic>HOLES</topic><topic>JUNCTIONS</topic><topic>Laser theory</topic><topic>LASERS</topic><topic>LEPTONS</topic><topic>MATERIALS SCIENCE</topic><topic>NONLINEAR OPTICS</topic><topic>Optical devices</topic><topic>Optical superlattices</topic><topic>OPTICS</topic><topic>PNICTIDES</topic><topic>Quantum well lasers</topic><topic>QUASI PARTICLES</topic><topic>RESONANCE</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>Semiconductor lasers</topic><topic>SEPARATION PROCESSES</topic><topic>Ultrafast optics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fu, W.S.</creatorcontrib><creatorcontrib>Harris, J.S.</creatorcontrib><creatorcontrib>Binder, R.</creatorcontrib><creatorcontrib>Koch, S.W.</creatorcontrib><creatorcontrib>Klem, J.F.</creatorcontrib><creatorcontrib>Olbright, G.R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fu, W.S.</au><au>Harris, J.S.</au><au>Binder, R.</au><au>Koch, S.W.</au><au>Klem, J.F.</au><au>Olbright, G.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1992-10-01</date><risdate>1992</risdate><volume>28</volume><issue>10</issue><spage>2404</spage><epage>2415</epage><pages>2404-2415</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.&lt; &gt;</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/3.159547</doi><tpages>12</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9197
ispartof IEEE journal of quantum electronics, 1992-10, Vol.28 (10), p.2404-2415
issn 0018-9197
1558-1713
language eng
recordid cdi_osti_scitechconnect_7181472
source IEEE Electronic Library (IEL)
subjects 360606 - Other Materials- Physical Properties- (1992-)
661200 - Techniques of General Use in Physics- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ANGULAR DISTRIBUTION
ARSENIC COMPOUNDS
ARSENIDES
Charge carrier processes
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DISTRIBUTION
ELECTRIC FIELDS
Electron optics
ELECTRONS
ELEMENTARY PARTICLES
EXCITONS
FERMIONS
GAIN
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HOLES
JUNCTIONS
Laser theory
LASERS
LEPTONS
MATERIALS SCIENCE
NONLINEAR OPTICS
Optical devices
Optical superlattices
OPTICS
PNICTIDES
Quantum well lasers
QUASI PARTICLES
RESONANCE
SEMICONDUCTOR JUNCTIONS
Semiconductor lasers
SEPARATION PROCESSES
Ultrafast optics
title Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T19%3A38%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nonlinear%20optical%20properties%20and%20ultrafast%20response%20of%20GaAs-AlAs%20type-II%20quantum%20wells&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Fu,%20W.S.&rft.date=1992-10-01&rft.volume=28&rft.issue=10&rft.spage=2404&rft.epage=2415&rft.pages=2404-2415&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/3.159547&rft_dat=%3Cproquest_RIE%3E28434350%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28434350&rft_id=info:pmid/&rft_ieee_id=159547&rfr_iscdi=true