External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range

A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized state...

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Veröffentlicht in:Applied physics letters 1990-02, Vol.56 (9), p.816-817
Hauptverfasser: LIDGARD, A, TANBUN-EK, T, LOGAN, R. A, TEMKIN, H, WECHT, K. W, OLSSON, N. A
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Sprache:eng
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Zusammenfassung:A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized states. At low current density, the n=1 state gives higher gain, whereas for higher carrier densities, the n=2 level dominates. This gives rise to a flat gain profile and an extended operating range, in fact, the widest tuning range reported so far for semiconductor lasers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102672