Er/Si(111) interface intermixing investigation using core level photoemission
We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room tempe...
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| Veröffentlicht in: | Applied physics letters 1990-07, Vol.57 (4), p.341-343 |
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| container_end_page | 343 |
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| container_issue | 4 |
| container_start_page | 341 |
| container_title | Applied physics letters |
| container_volume | 57 |
| creator | HADERBACHE, L WETZEL, P PIRRI, C PERUCHETTI, J. C BOLMONT, D GEWINNER, G |
| description | We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed. |
| doi_str_mv | 10.1063/1.103685 |
| format | Article |
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C ; BOLMONT, D ; GEWINNER, G</creator><creatorcontrib>HADERBACHE, L ; WETZEL, P ; PIRRI, C ; PERUCHETTI, J. C ; BOLMONT, D ; GEWINNER, G</creatorcontrib><description>We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.103685</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies ; Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; DIMENSIONS ; Electron and ion emission by liquids and solids; impact phenomena ; ELEMENTS ; EMISSION ; EPITAXY ; ERBIUM ; ERBIUM COMPOUNDS ; ERBIUM SILICIDES ; EVAPORATION ; Exact sciences and technology ; MATERIALS SCIENCE ; METALS ; Metals. Metallurgy ; MOLECULAR BEAM EPITAXY ; PHASE TRANSFORMATIONS ; PHOTOEMISSION ; Photoemission and photoelectron spectra ; Physics ; RARE EARTH COMPOUNDS ; RARE EARTHS ; SECONDARY EMISSION ; SEMIMETALS ; SILICIDES ; SILICON ; SILICON COMPOUNDS ; STOICHIOMETRY ; THICKNESS ; VACUUM EVAPORATION</subject><ispartof>Applied physics letters, 1990-07, Vol.57 (4), p.341-343</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-d47544d4392d08606da7590edc124525375361fe04b004aef29a2c8661cfc0e93</citedby><cites>FETCH-LOGICAL-c284t-d47544d4392d08606da7590edc124525375361fe04b004aef29a2c8661cfc0e93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19260694$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/7073980$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>HADERBACHE, L</creatorcontrib><creatorcontrib>WETZEL, P</creatorcontrib><creatorcontrib>PIRRI, C</creatorcontrib><creatorcontrib>PERUCHETTI, J. C</creatorcontrib><creatorcontrib>BOLMONT, D</creatorcontrib><creatorcontrib>GEWINNER, G</creatorcontrib><title>Er/Si(111) interface intermixing investigation using core level photoemission</title><title>Applied physics letters</title><description>We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.</description><subject>360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies</subject><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>DIMENSIONS</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>ELEMENTS</subject><subject>EMISSION</subject><subject>EPITAXY</subject><subject>ERBIUM</subject><subject>ERBIUM COMPOUNDS</subject><subject>ERBIUM SILICIDES</subject><subject>EVAPORATION</subject><subject>Exact sciences and technology</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>Metals. Metallurgy</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHOTOEMISSION</subject><subject>Photoemission and photoelectron spectra</subject><subject>Physics</subject><subject>RARE EARTH COMPOUNDS</subject><subject>RARE EARTHS</subject><subject>SECONDARY EMISSION</subject><subject>SEMIMETALS</subject><subject>SILICIDES</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>STOICHIOMETRY</subject><subject>THICKNESS</subject><subject>VACUUM EVAPORATION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkFtLw0AQhRdRsFbBnxAEoT7Ezuwt2Ucp9QIVH9TnsG4m7UqalN1Y9N-7JYJP58zMx3A4jF0i3CJoMcckQpfqiE0QiiIXiOUxmwCAyLVReMrOYvxMo-JCTNjzMsxf_QwRbzLfDRQa62h0W__tu3Xye4qDX9vB9132FQ871wfKWtpTm-02_dDT1seYzufspLFtpIs_nbL3--Xb4jFfvTw8Le5WueOlHPJaFkrKWgrDayg16NoWygDVDrlUXIlCCY0NgfwAkJYabix3pdboGgdkxJRdjX_7lKyKzg_kNq7vOnJDVUAhTAkJmo2QC32MgZpqF_zWhp8KoTp0VWE1dpXQ6xHd2ehs2wTbOR__ecNTSCPFL-hDZtk</recordid><startdate>19900723</startdate><enddate>19900723</enddate><creator>HADERBACHE, L</creator><creator>WETZEL, P</creator><creator>PIRRI, C</creator><creator>PERUCHETTI, J. C</creator><creator>BOLMONT, D</creator><creator>GEWINNER, G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19900723</creationdate><title>Er/Si(111) interface intermixing investigation using core level photoemission</title><author>HADERBACHE, L ; WETZEL, P ; PIRRI, C ; PERUCHETTI, J. C ; BOLMONT, D ; GEWINNER, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-d47544d4392d08606da7590edc124525375361fe04b004aef29a2c8661cfc0e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies</topic><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>DIMENSIONS</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>ELEMENTS</topic><topic>EMISSION</topic><topic>EPITAXY</topic><topic>ERBIUM</topic><topic>ERBIUM COMPOUNDS</topic><topic>ERBIUM SILICIDES</topic><topic>EVAPORATION</topic><topic>Exact sciences and technology</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>Metals. Metallurgy</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>PHASE TRANSFORMATIONS</topic><topic>PHOTOEMISSION</topic><topic>Photoemission and photoelectron spectra</topic><topic>Physics</topic><topic>RARE EARTH COMPOUNDS</topic><topic>RARE EARTHS</topic><topic>SECONDARY EMISSION</topic><topic>SEMIMETALS</topic><topic>SILICIDES</topic><topic>SILICON</topic><topic>SILICON COMPOUNDS</topic><topic>STOICHIOMETRY</topic><topic>THICKNESS</topic><topic>VACUUM EVAPORATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HADERBACHE, L</creatorcontrib><creatorcontrib>WETZEL, P</creatorcontrib><creatorcontrib>PIRRI, C</creatorcontrib><creatorcontrib>PERUCHETTI, J. C</creatorcontrib><creatorcontrib>BOLMONT, D</creatorcontrib><creatorcontrib>GEWINNER, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HADERBACHE, L</au><au>WETZEL, P</au><au>PIRRI, C</au><au>PERUCHETTI, J. C</au><au>BOLMONT, D</au><au>GEWINNER, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Er/Si(111) interface intermixing investigation using core level photoemission</atitle><jtitle>Applied physics letters</jtitle><date>1990-07-23</date><risdate>1990</risdate><volume>57</volume><issue>4</issue><spage>341</spage><epage>343</epage><pages>341-343</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103685</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1990-07, Vol.57 (4), p.341-343 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_7073980 |
| source | AIP Digital Archive |
| subjects | 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties DIMENSIONS Electron and ion emission by liquids and solids impact phenomena ELEMENTS EMISSION EPITAXY ERBIUM ERBIUM COMPOUNDS ERBIUM SILICIDES EVAPORATION Exact sciences and technology MATERIALS SCIENCE METALS Metals. Metallurgy MOLECULAR BEAM EPITAXY PHASE TRANSFORMATIONS PHOTOEMISSION Photoemission and photoelectron spectra Physics RARE EARTH COMPOUNDS RARE EARTHS SECONDARY EMISSION SEMIMETALS SILICIDES SILICON SILICON COMPOUNDS STOICHIOMETRY THICKNESS VACUUM EVAPORATION |
| title | Er/Si(111) interface intermixing investigation using core level photoemission |
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