Binding energies and electron affinities of small silicon clusters (n=2-5)

The Gaussian-2 (G2) theoretical procedure, based on ab initio molecular orbital theory, is used to calculate the energies of Sin and Si−n (n=1–5) clusters. The G2 energies are used to derive accurate binding energies and electron affinities of these clusters. The calculated electron affinities of Si...

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Veröffentlicht in:The Journal of chemical physics 1992-05, Vol.96 (9), p.6868-6872
Hauptverfasser: CURTISS, L. A, DEUTSCH, P. W, RAGHAVACHARI, K
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container_issue 9
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container_title The Journal of chemical physics
container_volume 96
creator CURTISS, L. A
DEUTSCH, P. W
RAGHAVACHARI, K
description The Gaussian-2 (G2) theoretical procedure, based on ab initio molecular orbital theory, is used to calculate the energies of Sin and Si−n (n=1–5) clusters. The G2 energies are used to derive accurate binding energies and electron affinities of these clusters. The calculated electron affinities of Si2–Si4 are in agreement to within 0.1 eV with results from recent photoelectron spectroscopic measurements.
doi_str_mv 10.1063/1.462577
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fullrecord <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_7043610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5255065</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-50eb97191ebfd7f1472d76745dd2acbd762ee4b0d7831fc0302998e2366636cb3</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKvgTwjiQhdTb97NwoUWnxTc6Dpk8qiRaaYk48J_75QRV-dyzsflcBA6J7AgINkNWXBJhVIHaEZgqRslNRyiGQAljZYgj9FJrV8AQBTlM_R6n7JPeYNDDmWTQsU2exy64IbSZ2xjTDkNe7-PuG5t1-GauuTGzHXfdQil4qt8SxtxfYqOou1qOPvTOfp4fHhfPTfrt6eX1d26cYyroREQWq2IJqGNXkXCFfVKKi68p9a1401D4C14tWQkOmBAtV4GyqSUTLqWzdHF9LevQzLVpSG4z7FQHjsbBZxJAiN0NUGu9LWWEM2upK0tP4aA2Q9liJmGGtHLCd3Z6mwXi80u1X9eUCFACvYLGo9lUA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Binding energies and electron affinities of small silicon clusters (n=2-5)</title><source>AIP Digital Archive</source><creator>CURTISS, L. A ; DEUTSCH, P. W ; RAGHAVACHARI, K</creator><creatorcontrib>CURTISS, L. A ; DEUTSCH, P. W ; RAGHAVACHARI, K</creatorcontrib><description>The Gaussian-2 (G2) theoretical procedure, based on ab initio molecular orbital theory, is used to calculate the energies of Sin and Si−n (n=1–5) clusters. The G2 energies are used to derive accurate binding energies and electron affinities of these clusters. The calculated electron affinities of Si2–Si4 are in agreement to within 0.1 eV with results from recent photoelectron spectroscopic measurements.</description><identifier>ISSN: 0021-9606</identifier><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/1.462577</identifier><identifier>CODEN: JCPSA6</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>664500 - Special Atoms &amp; Molecules- (1992-) ; ACCURACY ; AFFINITY ; Atomic and molecular clusters ; ATOMIC AND MOLECULAR PHYSICS ; BINDING ENERGY ; CORRELATIONS ; ELECTRON SPECTROSCOPY ; ELEMENTS ; ENERGY ; Exact sciences and technology ; GEOMETRY ; MATHEMATICS ; MOLECULAR ORBITAL METHOD ; OPTIMIZATION ; PHOTOELECTRON SPECTROSCOPY ; Physics ; SEMIMETALS ; SILICON ; SPECTROSCOPY ; Studies of special atoms, molecules and their ions; clusters</subject><ispartof>The Journal of chemical physics, 1992-05, Vol.96 (9), p.6868-6872</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-50eb97191ebfd7f1472d76745dd2acbd762ee4b0d7831fc0302998e2366636cb3</citedby><cites>FETCH-LOGICAL-c347t-50eb97191ebfd7f1472d76745dd2acbd762ee4b0d7831fc0302998e2366636cb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5255065$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/7043610$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>CURTISS, L. A</creatorcontrib><creatorcontrib>DEUTSCH, P. W</creatorcontrib><creatorcontrib>RAGHAVACHARI, K</creatorcontrib><title>Binding energies and electron affinities of small silicon clusters (n=2-5)</title><title>The Journal of chemical physics</title><description>The Gaussian-2 (G2) theoretical procedure, based on ab initio molecular orbital theory, is used to calculate the energies of Sin and Si−n (n=1–5) clusters. The G2 energies are used to derive accurate binding energies and electron affinities of these clusters. The calculated electron affinities of Si2–Si4 are in agreement to within 0.1 eV with results from recent photoelectron spectroscopic measurements.</description><subject>664500 - Special Atoms &amp; Molecules- (1992-)</subject><subject>ACCURACY</subject><subject>AFFINITY</subject><subject>Atomic and molecular clusters</subject><subject>ATOMIC AND MOLECULAR PHYSICS</subject><subject>BINDING ENERGY</subject><subject>CORRELATIONS</subject><subject>ELECTRON SPECTROSCOPY</subject><subject>ELEMENTS</subject><subject>ENERGY</subject><subject>Exact sciences and technology</subject><subject>GEOMETRY</subject><subject>MATHEMATICS</subject><subject>MOLECULAR ORBITAL METHOD</subject><subject>OPTIMIZATION</subject><subject>PHOTOELECTRON SPECTROSCOPY</subject><subject>Physics</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SPECTROSCOPY</subject><subject>Studies of special atoms, molecules and their ions; clusters</subject><issn>0021-9606</issn><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKvgTwjiQhdTb97NwoUWnxTc6Dpk8qiRaaYk48J_75QRV-dyzsflcBA6J7AgINkNWXBJhVIHaEZgqRslNRyiGQAljZYgj9FJrV8AQBTlM_R6n7JPeYNDDmWTQsU2exy64IbSZ2xjTDkNe7-PuG5t1-GauuTGzHXfdQil4qt8SxtxfYqOou1qOPvTOfp4fHhfPTfrt6eX1d26cYyroREQWq2IJqGNXkXCFfVKKi68p9a1401D4C14tWQkOmBAtV4GyqSUTLqWzdHF9LevQzLVpSG4z7FQHjsbBZxJAiN0NUGu9LWWEM2upK0tP4aA2Q9liJmGGtHLCd3Z6mwXi80u1X9eUCFACvYLGo9lUA</recordid><startdate>19920501</startdate><enddate>19920501</enddate><creator>CURTISS, L. A</creator><creator>DEUTSCH, P. W</creator><creator>RAGHAVACHARI, K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19920501</creationdate><title>Binding energies and electron affinities of small silicon clusters (n=2-5)</title><author>CURTISS, L. A ; DEUTSCH, P. W ; RAGHAVACHARI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-50eb97191ebfd7f1472d76745dd2acbd762ee4b0d7831fc0302998e2366636cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>664500 - Special Atoms &amp; Molecules- (1992-)</topic><topic>ACCURACY</topic><topic>AFFINITY</topic><topic>Atomic and molecular clusters</topic><topic>ATOMIC AND MOLECULAR PHYSICS</topic><topic>BINDING ENERGY</topic><topic>CORRELATIONS</topic><topic>ELECTRON SPECTROSCOPY</topic><topic>ELEMENTS</topic><topic>ENERGY</topic><topic>Exact sciences and technology</topic><topic>GEOMETRY</topic><topic>MATHEMATICS</topic><topic>MOLECULAR ORBITAL METHOD</topic><topic>OPTIMIZATION</topic><topic>PHOTOELECTRON SPECTROSCOPY</topic><topic>Physics</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SPECTROSCOPY</topic><topic>Studies of special atoms, molecules and their ions; clusters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CURTISS, L. A</creatorcontrib><creatorcontrib>DEUTSCH, P. W</creatorcontrib><creatorcontrib>RAGHAVACHARI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CURTISS, L. A</au><au>DEUTSCH, P. W</au><au>RAGHAVACHARI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Binding energies and electron affinities of small silicon clusters (n=2-5)</atitle><jtitle>The Journal of chemical physics</jtitle><date>1992-05-01</date><risdate>1992</risdate><volume>96</volume><issue>9</issue><spage>6868</spage><epage>6872</epage><pages>6868-6872</pages><issn>0021-9606</issn><eissn>1089-7690</eissn><coden>JCPSA6</coden><abstract>The Gaussian-2 (G2) theoretical procedure, based on ab initio molecular orbital theory, is used to calculate the energies of Sin and Si−n (n=1–5) clusters. The G2 energies are used to derive accurate binding energies and electron affinities of these clusters. The calculated electron affinities of Si2–Si4 are in agreement to within 0.1 eV with results from recent photoelectron spectroscopic measurements.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.462577</doi><tpages>5</tpages></addata></record>
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1089-7690
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subjects 664500 - Special Atoms & Molecules- (1992-)
ACCURACY
AFFINITY
Atomic and molecular clusters
ATOMIC AND MOLECULAR PHYSICS
BINDING ENERGY
CORRELATIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
Exact sciences and technology
GEOMETRY
MATHEMATICS
MOLECULAR ORBITAL METHOD
OPTIMIZATION
PHOTOELECTRON SPECTROSCOPY
Physics
SEMIMETALS
SILICON
SPECTROSCOPY
Studies of special atoms, molecules and their ions
clusters
title Binding energies and electron affinities of small silicon clusters (n=2-5)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T22%3A44%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Binding%20energies%20and%20electron%20affinities%20of%20small%20silicon%20clusters%20(n=2-5)&rft.jtitle=The%20Journal%20of%20chemical%20physics&rft.au=CURTISS,%20L.%20A&rft.date=1992-05-01&rft.volume=96&rft.issue=9&rft.spage=6868&rft.epage=6872&rft.pages=6868-6872&rft.issn=0021-9606&rft.eissn=1089-7690&rft.coden=JCPSA6&rft_id=info:doi/10.1063/1.462577&rft_dat=%3Cpascalfrancis_osti_%3E5255065%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true