Heteroepitaxy of InP on Si substrates by MOCVD
This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crys...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1989-12, Vol.136 (12), p.3853-3856 |
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| container_issue | 12 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 136 |
| creator | KOHAMA, Y KADOTA, Y OHMACHI, Y |
| description | This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}. |
| doi_str_mv | 10.1149/1.2096561 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_6952572</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19783098</sourcerecordid><originalsourceid>FETCH-LOGICAL-c216t-7a17aa00f71a353a90a50aa1e392d52b84fca3d061253524332264fa230183c13</originalsourceid><addsrcrecordid>eNpFkM1KAzEYRYMoWKsL3yAILlxMzZffyVJqtYVKBX-24Zs0wZE6U5II9u0dacHV5cK5d3EIuQQ2AZD2FiacWa00HJERWKkqAwDHZMQYiEpqBafkLOfPoUItzYhM5qGE1IdtW_BnR_tIF90z7Tv60tL83eSSsIRMmx19Wk3f78_JScRNDheHHJO3h9nrdF4tV4-L6d2y8hx0qQyCQWQsGkChBFqGiiFCEJavFW9qGT2KNdPAlVBcCsG5lhG5YFALD2JMrva_fS6ty74twX_4vuuCL05bxZXhA3Szh3zqc04hum1qvzDtHDD3Z8OBO9gY2Os9u8XscRMTdr7N_wNrasFsLX4Bs7haeg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Heteroepitaxy of InP on Si substrates by MOCVD</title><source>IOP Publishing Journals</source><creator>KOHAMA, Y ; KADOTA, Y ; OHMACHI, Y</creator><creatorcontrib>KOHAMA, Y ; KADOTA, Y ; OHMACHI, Y</creatorcontrib><description>This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2096561</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>360601 - Other Materials- Preparation & Manufacture ; 360602 - Other Materials- Structure & Phase Studies ; ARSENIC COMPOUNDS ; ARSENIDES ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; Condensed matter: structure, mechanical and thermal properties ; CRYSTAL GROWTH METHODS ; DEPOSITION ; ELEMENTS ; EPITAXY ; Exact sciences and technology ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; INDIUM COMPOUNDS ; INDIUM PHOSPHIDES ; LAYERS ; MATERIALS SCIENCE ; OPTIMIZATION ; PHOSPHIDES ; PHOSPHORUS COMPOUNDS ; Physics ; PNICTIDES ; SEMIMETALS ; SILICON ; Solid surfaces and solid-solid interfaces ; SUBSTRATES ; Surface and interface dynamics and vibrations ; SURFACE COATING ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; THERMAL CYCLING ; Thin film structure and morphology</subject><ispartof>Journal of the Electrochemical Society, 1989-12, Vol.136 (12), p.3853-3856</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c216t-7a17aa00f71a353a90a50aa1e392d52b84fca3d061253524332264fa230183c13</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19783098$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6952572$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>KOHAMA, Y</creatorcontrib><creatorcontrib>KADOTA, Y</creatorcontrib><creatorcontrib>OHMACHI, Y</creatorcontrib><title>Heteroepitaxy of InP on Si substrates by MOCVD</title><title>Journal of the Electrochemical Society</title><description>This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}.</description><subject>360601 - Other Materials- Preparation & Manufacture</subject><subject>360602 - Other Materials- Structure & Phase Studies</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>DEPOSITION</subject><subject>ELEMENTS</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INDIUM COMPOUNDS</subject><subject>INDIUM PHOSPHIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>OPTIMIZATION</subject><subject>PHOSPHIDES</subject><subject>PHOSPHORUS COMPOUNDS</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>SUBSTRATES</subject><subject>Surface and interface dynamics and vibrations</subject><subject>SURFACE COATING</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>THERMAL CYCLING</subject><subject>Thin film structure and morphology</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNpFkM1KAzEYRYMoWKsL3yAILlxMzZffyVJqtYVKBX-24Zs0wZE6U5II9u0dacHV5cK5d3EIuQQ2AZD2FiacWa00HJERWKkqAwDHZMQYiEpqBafkLOfPoUItzYhM5qGE1IdtW_BnR_tIF90z7Tv60tL83eSSsIRMmx19Wk3f78_JScRNDheHHJO3h9nrdF4tV4-L6d2y8hx0qQyCQWQsGkChBFqGiiFCEJavFW9qGT2KNdPAlVBcCsG5lhG5YFALD2JMrva_fS6ty74twX_4vuuCL05bxZXhA3Szh3zqc04hum1qvzDtHDD3Z8OBO9gY2Os9u8XscRMTdr7N_wNrasFsLX4Bs7haeg</recordid><startdate>19891201</startdate><enddate>19891201</enddate><creator>KOHAMA, Y</creator><creator>KADOTA, Y</creator><creator>OHMACHI, Y</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19891201</creationdate><title>Heteroepitaxy of InP on Si substrates by MOCVD</title><author>KOHAMA, Y ; KADOTA, Y ; OHMACHI, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c216t-7a17aa00f71a353a90a50aa1e392d52b84fca3d061253524332264fa230183c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360601 - Other Materials- Preparation & Manufacture</topic><topic>360602 - Other Materials- Structure & Phase Studies</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>DEPOSITION</topic><topic>ELEMENTS</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INDIUM COMPOUNDS</topic><topic>INDIUM PHOSPHIDES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>OPTIMIZATION</topic><topic>PHOSPHIDES</topic><topic>PHOSPHORUS COMPOUNDS</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>SUBSTRATES</topic><topic>Surface and interface dynamics and vibrations</topic><topic>SURFACE COATING</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>THERMAL CYCLING</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KOHAMA, Y</creatorcontrib><creatorcontrib>KADOTA, Y</creatorcontrib><creatorcontrib>OHMACHI, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KOHAMA, Y</au><au>KADOTA, Y</au><au>OHMACHI, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Heteroepitaxy of InP on Si substrates by MOCVD</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1989-12-01</date><risdate>1989</risdate><volume>136</volume><issue>12</issue><spage>3853</spage><epage>3856</epage><pages>3853-3856</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2096561</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1989-12, Vol.136 (12), p.3853-3856 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_osti_scitechconnect_6952572 |
| source | IOP Publishing Journals |
| subjects | 360601 - Other Materials- Preparation & Manufacture 360602 - Other Materials- Structure & Phase Studies ARSENIC COMPOUNDS ARSENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Condensed matter: structure, mechanical and thermal properties CRYSTAL GROWTH METHODS DEPOSITION ELEMENTS EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM COMPOUNDS INDIUM PHOSPHIDES LAYERS MATERIALS SCIENCE OPTIMIZATION PHOSPHIDES PHOSPHORUS COMPOUNDS Physics PNICTIDES SEMIMETALS SILICON Solid surfaces and solid-solid interfaces SUBSTRATES Surface and interface dynamics and vibrations SURFACE COATING Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) THERMAL CYCLING Thin film structure and morphology |
| title | Heteroepitaxy of InP on Si substrates by MOCVD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T12%3A33%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Heteroepitaxy%20of%20InP%20on%20Si%20substrates%20by%20MOCVD&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=KOHAMA,%20Y&rft.date=1989-12-01&rft.volume=136&rft.issue=12&rft.spage=3853&rft.epage=3856&rft.pages=3853-3856&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.2096561&rft_dat=%3Cpascalfrancis_osti_%3E19783098%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |