Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing
We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well-defined layer...
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| Veröffentlicht in: | Applied physics letters 1992-12, Vol.61 (26), p.3124-3126 |
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| container_issue | 26 |
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| container_title | Applied physics letters |
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| creator | PARIKH, N. R HUNN, J. D MCGUCKEN, E SWANSON, M. L WHITE, C. W RUDDER, R. A MALTA, D. P POSTHILL, J. B MARKUNAS, R. J |
| description | We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well-established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets. |
| doi_str_mv | 10.1063/1.107981 |
| format | Article |
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R ; HUNN, J. D ; MCGUCKEN, E ; SWANSON, M. L ; WHITE, C. W ; RUDDER, R. A ; MALTA, D. P ; POSTHILL, J. B ; MARKUNAS, R. J</creator><creatorcontrib>PARIKH, N. R ; HUNN, J. D ; MCGUCKEN, E ; SWANSON, M. L ; WHITE, C. W ; RUDDER, R. A ; MALTA, D. P ; POSTHILL, J. B ; MARKUNAS, R. J</creatorcontrib><description>We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well-established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.107981</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360605 -- Materials-- Radiation Effects ; CARBON ; CARBON IONS ; CHARGED PARTICLES ; Cross-disciplinary physics: materials science; rheology ; CRYSTALS ; DAMAGE ; DIAMONDS ; ELEMENTAL MINERALS ; ELEMENTS ; EPITAXY ; ETCHING ; Exact sciences and technology ; FABRICATION ; ION IMPLANTATION ; IONS ; MATERIALS SCIENCE ; Methods of deposition of films and coatings; film growth and epitaxy ; MINERALS ; MONOCRYSTALS ; NONMETALS ; OXYGEN IONS ; Physics ; SURFACE FINISHING 360601 -- Other Materials-- Preparation & Manufacture</subject><ispartof>Applied physics letters, 1992-12, Vol.61 (26), p.3124-3126</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-6b10b989bcd90894bc779d6f28f4c527ce0b36b3af95e67ac3c6d805a098754c3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4486599$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6906290$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>PARIKH, N. 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For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well-established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets.</description><subject>360605 -- Materials-- Radiation Effects</subject><subject>CARBON</subject><subject>CARBON IONS</subject><subject>CHARGED PARTICLES</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CRYSTALS</subject><subject>DAMAGE</subject><subject>DIAMONDS</subject><subject>ELEMENTAL MINERALS</subject><subject>ELEMENTS</subject><subject>EPITAXY</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>ION IMPLANTATION</subject><subject>IONS</subject><subject>MATERIALS SCIENCE</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MINERALS</subject><subject>MONOCRYSTALS</subject><subject>NONMETALS</subject><subject>OXYGEN IONS</subject><subject>Physics</subject><subject>SURFACE FINISHING 360601 -- Other Materials-- Preparation & Manufacture</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKvgR1hExMtqstlkk6OI_6DgQb14CclsYiPppm5Sod_elC2e3jzmx2PmIXRO8A3BnN6SIp0U5ADNytDVlBBxiGYYY1pzycgxOknpu1jWUDpDn29--Aq2hnGbsg5V7_UqDn21DjrbKniXo3OVhqW3v7avzLbycaj8quyHrPPO6IKnjUn2Z2OHXOxgdSipp-jI6ZDs2V7n6OPx4f3-uV68Pr3c3y1qoALnmhuCjRTSQC-xkK2BrpM9d41wLbCmA4sN5YZqJ5nlnQYKvBeYaSxFx1qgc3Qx5caUvUrgs4UlxHIGZMUl5o3EBbqaoPUYy50pq5VPYEN5w8ZNUg0TouFEFvB6AmGMKY3WqfXoV3rcKoLVrmFF1NRwQS_3mTqBDm7UA_j0z7et4ExK-gcqQHqB</recordid><startdate>19921228</startdate><enddate>19921228</enddate><creator>PARIKH, N. 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R</creatorcontrib><creatorcontrib>HUNN, J. D</creatorcontrib><creatorcontrib>MCGUCKEN, E</creatorcontrib><creatorcontrib>SWANSON, M. L</creatorcontrib><creatorcontrib>WHITE, C. W</creatorcontrib><creatorcontrib>RUDDER, R. A</creatorcontrib><creatorcontrib>MALTA, D. P</creatorcontrib><creatorcontrib>POSTHILL, J. B</creatorcontrib><creatorcontrib>MARKUNAS, R. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARIKH, N. R</au><au>HUNN, J. D</au><au>MCGUCKEN, E</au><au>SWANSON, M. L</au><au>WHITE, C. W</au><au>RUDDER, R. A</au><au>MALTA, D. P</au><au>POSTHILL, J. B</au><au>MARKUNAS, R. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing</atitle><jtitle>Applied physics letters</jtitle><date>1992-12-28</date><risdate>1992</risdate><volume>61</volume><issue>26</issue><spage>3124</spage><epage>3126</epage><pages>3124-3126</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well-established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.107981</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1992-12, Vol.61 (26), p.3124-3126 |
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| subjects | 360605 -- Materials-- Radiation Effects CARBON CARBON IONS CHARGED PARTICLES Cross-disciplinary physics: materials science rheology CRYSTALS DAMAGE DIAMONDS ELEMENTAL MINERALS ELEMENTS EPITAXY ETCHING Exact sciences and technology FABRICATION ION IMPLANTATION IONS MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy MINERALS MONOCRYSTALS NONMETALS OXYGEN IONS Physics SURFACE FINISHING 360601 -- Other Materials-- Preparation & Manufacture |
| title | Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing |
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