Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature

We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflect...

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