Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature
We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflect...
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| Veröffentlicht in: | Applied physics letters 1993-03, Vol.62:9 |
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| container_title | Applied physics letters |
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| creator | Fritz, I.J. Hammons, B.E. Howard, A.J. Brennan, T.M. Olsen, J.A. |
| description | We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias. |
| doi_str_mv | 10.1063/1.108519 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_6767565</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6767565</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_67675653</originalsourceid><addsrcrecordid>eNqNjc1KAzEUhYMoOFrBR7i40kVqYkimXRax2l0X7qSUmN7RkfzIzR2Kb28WPoCLw8fhO3CEuNZqrpUz97phYfXyRHRa9b00Wi9ORaeUMtItrT4XF7V-tWofjOnEYe3f6UfKLVJhIBwiBvY5IKRymKLnQjC06DkYeEvTLsFAJcHtJq_is79bVUiekUYfK3xQOWbwDLEcgTF9I3meCGfibGger_54KW7WT6-PL7JUHvc1jIzhM5Sc2_fe9a63zpp_jX4BxWhJZQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature</title><source>AIP Digital Archive</source><creator>Fritz, I.J. ; Hammons, B.E. ; Howard, A.J. ; Brennan, T.M. ; Olsen, J.A.</creator><creatorcontrib>Fritz, I.J. ; Hammons, B.E. ; Howard, A.J. ; Brennan, T.M. ; Olsen, J.A.</creatorcontrib><description>We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.108519</identifier><language>eng</language><publisher>United States</publisher><subject>360601 -- Other Materials-- Preparation & Manufacture ; ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; ARSENIC COMPOUNDS ; ARSENIDES ; BRAGG REFLECTION ; ENGINEERING ; EPITAXY ; FABRY-PEROT INTERFEROMETER ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; GROWTH ; HETEROJUNCTIONS ; INDIUM ARSENIDES ; INDIUM COMPOUNDS ; INTERFEROMETERS ; JUNCTIONS ; MATERIALS SCIENCE ; MEASURING INSTRUMENTS ; MOLECULAR BEAM EPITAXY ; OPTICAL PROPERTIES ; PHYSICAL PROPERTIES ; PNICTIDES ; REFLECTION ; REFLECTIVITY ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR JUNCTIONS ; SUPERLATTICES ; SURFACE PROPERTIES 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) ; TEMPERATURE EFFECTS</subject><ispartof>Applied physics letters, 1993-03, Vol.62:9</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,27929,27930</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/6767565$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Fritz, I.J.</creatorcontrib><creatorcontrib>Hammons, B.E.</creatorcontrib><creatorcontrib>Howard, A.J.</creatorcontrib><creatorcontrib>Brennan, T.M.</creatorcontrib><creatorcontrib>Olsen, J.A.</creatorcontrib><title>Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature</title><title>Applied physics letters</title><description>We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias.</description><subject>360601 -- Other Materials-- Preparation & Manufacture</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>BRAGG REFLECTION</subject><subject>ENGINEERING</subject><subject>EPITAXY</subject><subject>FABRY-PEROT INTERFEROMETER</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>GROWTH</subject><subject>HETEROJUNCTIONS</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INTERFEROMETERS</subject><subject>JUNCTIONS</subject><subject>MATERIALS SCIENCE</subject><subject>MEASURING INSTRUMENTS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>OPTICAL PROPERTIES</subject><subject>PHYSICAL PROPERTIES</subject><subject>PNICTIDES</subject><subject>REFLECTION</subject><subject>REFLECTIVITY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SUPERLATTICES</subject><subject>SURFACE PROPERTIES 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</subject><subject>TEMPERATURE EFFECTS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNjc1KAzEUhYMoOFrBR7i40kVqYkimXRax2l0X7qSUmN7RkfzIzR2Kb28WPoCLw8fhO3CEuNZqrpUz97phYfXyRHRa9b00Wi9ORaeUMtItrT4XF7V-tWofjOnEYe3f6UfKLVJhIBwiBvY5IKRymKLnQjC06DkYeEvTLsFAJcHtJq_is79bVUiekUYfK3xQOWbwDLEcgTF9I3meCGfibGger_54KW7WT6-PL7JUHvc1jIzhM5Sc2_fe9a63zpp_jX4BxWhJZQ</recordid><startdate>19930301</startdate><enddate>19930301</enddate><creator>Fritz, I.J.</creator><creator>Hammons, B.E.</creator><creator>Howard, A.J.</creator><creator>Brennan, T.M.</creator><creator>Olsen, J.A.</creator><scope>OTOTI</scope></search><sort><creationdate>19930301</creationdate><title>Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature</title><author>Fritz, I.J. ; Hammons, B.E. ; Howard, A.J. ; Brennan, T.M. ; Olsen, J.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_67675653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>360601 -- Other Materials-- Preparation & Manufacture</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>BRAGG REFLECTION</topic><topic>ENGINEERING</topic><topic>EPITAXY</topic><topic>FABRY-PEROT INTERFEROMETER</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>GROWTH</topic><topic>HETEROJUNCTIONS</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INTERFEROMETERS</topic><topic>JUNCTIONS</topic><topic>MATERIALS SCIENCE</topic><topic>MEASURING INSTRUMENTS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>OPTICAL PROPERTIES</topic><topic>PHYSICAL PROPERTIES</topic><topic>PNICTIDES</topic><topic>REFLECTION</topic><topic>REFLECTIVITY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SUPERLATTICES</topic><topic>SURFACE PROPERTIES 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</topic><topic>TEMPERATURE EFFECTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fritz, I.J.</creatorcontrib><creatorcontrib>Hammons, B.E.</creatorcontrib><creatorcontrib>Howard, A.J.</creatorcontrib><creatorcontrib>Brennan, T.M.</creatorcontrib><creatorcontrib>Olsen, J.A.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fritz, I.J.</au><au>Hammons, B.E.</au><au>Howard, A.J.</au><au>Brennan, T.M.</au><au>Olsen, J.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature</atitle><jtitle>Applied physics letters</jtitle><date>1993-03-01</date><risdate>1993</risdate><volume>62:9</volume><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias.</abstract><cop>United States</cop><doi>10.1063/1.108519</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-03, Vol.62:9 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_6767565 |
| source | AIP Digital Archive |
| subjects | 360601 -- Other Materials-- Preparation & Manufacture ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES BRAGG REFLECTION ENGINEERING EPITAXY FABRY-PEROT INTERFEROMETER GALLIUM ARSENIDES GALLIUM COMPOUNDS GROWTH HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS INTERFEROMETERS JUNCTIONS MATERIALS SCIENCE MEASURING INSTRUMENTS MOLECULAR BEAM EPITAXY OPTICAL PROPERTIES PHYSICAL PROPERTIES PNICTIDES REFLECTION REFLECTIVITY SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SUPERLATTICES SURFACE PROPERTIES 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) TEMPERATURE EFFECTS |
| title | Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-11T23%3A04%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabry--Perot%20reflectance%20modulator%20for%201.%203%20%5Bmu%5Dm%20from%20(InAlGa)As%20materials%20grown%20at%20low%20temperature&rft.jtitle=Applied%20physics%20letters&rft.au=Fritz,%20I.J.&rft.date=1993-03-01&rft.volume=62:9&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.108519&rft_dat=%3Costi%3E6767565%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |