High power output 1. 48--1. 51. mu. m continuously graded index separate confinement strained quantum well lasers

High power output 1. 48--1. 51. mu. m continuously graded index separate confinement strained quantum well lasers

A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 {mu}m is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 {mu}m and a facet reflectivity of {similar to}5 and 85% for the front and the rear facets,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1990-07, Vol.57:3
Hauptverfasser: Tanbun-Ek, T., Logan, R.A., Olsson, N.A., Temkin, H., Sergent, A.M., Wecht, K.W.
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
ENGINEERING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
OPERATION
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES 426002 > Engineering-- Lasers & Masers-- (1990-)
THRESHOLD CURRENT
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 {mu}m is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 {mu}m and a facet reflectivity of {similar to}5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103722