A new class of single event hard errors [DRAM cells]
Experimental results reported here indicate that heavy ions can cause hard errors in conventional one-transistor dynamic memory cells in addition to, as previously reported, four-transistor static cells. Analysis of this data reveals that the hard errors fail into two classes, one that is consistent...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-12, Vol.41 (6), p.2043-2048 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) |
| container_volume | 41 |
| creator | Swift, G.M. Padgett, D.J. Johnston, A.H. |
| description | Experimental results reported here indicate that heavy ions can cause hard errors in conventional one-transistor dynamic memory cells in addition to, as previously reported, four-transistor static cells. Analysis of this data reveals that the hard errors fail into two classes, one that is consistent with the expected single-ion dose mechanism and another that is clearly inconsistent. In particular, the new class of hard errors is separable from the dosed cells based on irradiation conditions and the data-loss time scale and direction. Further, this damage is not additive between ion hits, does not follow "effective" LET, and is quite resistant to annealing. As a result these hard errors would accumulate over long missions and assuming the damaged element is the access transistor, can be expected in other types of storage elements with similar transistors, e.g., static RAMs and microprocessor registers. Additionally, it was found that scaling increases the susceptibility for a given ion and lowers the ion threshold, although lowered bias mitigates the damage.< > |
| doi_str_mv | 10.1109/23.340540 |
| format | Article |
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Analysis of this data reveals that the hard errors fail into two classes, one that is consistent with the expected single-ion dose mechanism and another that is clearly inconsistent. In particular, the new class of hard errors is separable from the dosed cells based on irradiation conditions and the data-loss time scale and direction. Further, this damage is not additive between ion hits, does not follow "effective" LET, and is quite resistant to annealing. As a result these hard errors would accumulate over long missions and assuming the damaged element is the access transistor, can be expected in other types of storage elements with similar transistors, e.g., static RAMs and microprocessor registers. Additionally, it was found that scaling increases the susceptibility for a given ion and lowers the ion threshold, although lowered bias mitigates the damage.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.340540</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Capacitors ; DATA ; DATA ANALYSIS ; DRAM chips ; Electronics ; ERRORS ; Exact sciences and technology ; EXPERIMENTAL DATA ; INFORMATION ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; Laboratories ; MEMORY DEVICES ; Microprocessors ; NUMERICAL DATA ; PHYSICAL RADIATION EFFECTS ; Propulsion ; RADIATION EFFECTS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems ; Random access memory ; Registers ; SPACE FLIGHT ; Space technology ; Testing ; Testing, measurement, noise and reliability</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2043-2048</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-da069674613c136c94e9e9d4d7d69d06453e9ad2d3ccd39f72119d7045fa405d3</citedby><cites>FETCH-LOGICAL-c333t-da069674613c136c94e9e9d4d7d69d06453e9ad2d3ccd39f72119d7045fa405d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/340540$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,792,881,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/340540$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3437708$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6488786$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Swift, G.M.</creatorcontrib><creatorcontrib>Padgett, D.J.</creatorcontrib><creatorcontrib>Johnston, A.H.</creatorcontrib><title>A new class of single event hard errors [DRAM cells]</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</title><addtitle>TNS</addtitle><description>Experimental results reported here indicate that heavy ions can cause hard errors in conventional one-transistor dynamic memory cells in addition to, as previously reported, four-transistor static cells. Analysis of this data reveals that the hard errors fail into two classes, one that is consistent with the expected single-ion dose mechanism and another that is clearly inconsistent. In particular, the new class of hard errors is separable from the dosed cells based on irradiation conditions and the data-loss time scale and direction. Further, this damage is not additive between ion hits, does not follow "effective" LET, and is quite resistant to annealing. As a result these hard errors would accumulate over long missions and assuming the damaged element is the access transistor, can be expected in other types of storage elements with similar transistors, e.g., static RAMs and microprocessor registers. Additionally, it was found that scaling increases the susceptibility for a given ion and lowers the ion threshold, although lowered bias mitigates the damage.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Capacitors</subject><subject>DATA</subject><subject>DATA ANALYSIS</subject><subject>DRAM chips</subject><subject>Electronics</subject><subject>ERRORS</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>INFORMATION</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>Laboratories</subject><subject>MEMORY DEVICES</subject><subject>Microprocessors</subject><subject>NUMERICAL DATA</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Propulsion</subject><subject>RADIATION EFFECTS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><subject>Random access memory</subject><subject>Registers</subject><subject>SPACE FLIGHT</subject><subject>Space technology</subject><subject>Testing</subject><subject>Testing, measurement, noise and reliability</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNpN0M1LwzAYBvAgCs7pwaunICJ4qCbNV3Mc8xMmguhJJITkrat07czbKf73dnaIpxDyex_yPoQccnbOObMXuTgXkinJtsiIK1VkXJlim4wY40VmpbW7ZA_xvb9KxdSIyAlt4IuG2iPStqRYNW81UPiEpqNznyKFlNqE9OXycXJPA9Q1vu6TndLXCAebc0yer6-eprfZ7OHmbjqZZUEI0WXRM221kZqLwIUOVoIFG2U0UdvItFQCrI95FCFEYUuTc26jYVKVvt8hijE5HnJb7CqHoeogzEPbNBA6p2VRmEL36HRAy9R-rAA7t6hw_U_fQLtCl_fQapn38GyAIbWICUq3TNXCp2_HmVuX53LhhvJ6e7IJ9Rh8XSbfhAr_BoQUxrCiZ0cDqwDg3-tvxg_8PHL_</recordid><startdate>19941201</startdate><enddate>19941201</enddate><creator>Swift, G.M.</creator><creator>Padgett, D.J.</creator><creator>Johnston, A.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>OTOTI</scope></search><sort><creationdate>19941201</creationdate><title>A new class of single event hard errors [DRAM cells]</title><author>Swift, G.M. ; Padgett, D.J. ; Johnston, A.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-da069674613c136c94e9e9d4d7d69d06453e9ad2d3ccd39f72119d7045fa405d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Capacitors</topic><topic>DATA</topic><topic>DATA ANALYSIS</topic><topic>DRAM chips</topic><topic>Electronics</topic><topic>ERRORS</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>INFORMATION</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>Laboratories</topic><topic>MEMORY DEVICES</topic><topic>Microprocessors</topic><topic>NUMERICAL DATA</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Propulsion</topic><topic>RADIATION EFFECTS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><topic>Random access memory</topic><topic>Registers</topic><topic>SPACE FLIGHT</topic><topic>Space technology</topic><topic>Testing</topic><topic>Testing, measurement, noise and reliability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Swift, G.M.</creatorcontrib><creatorcontrib>Padgett, D.J.</creatorcontrib><creatorcontrib>Johnston, A.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Swift, G.M.</au><au>Padgett, D.J.</au><au>Johnston, A.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new class of single event hard errors [DRAM cells]</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle><stitle>TNS</stitle><date>1994-12-01</date><risdate>1994</risdate><volume>41</volume><issue>6</issue><spage>2043</spage><epage>2048</epage><pages>2043-2048</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Experimental results reported here indicate that heavy ions can cause hard errors in conventional one-transistor dynamic memory cells in addition to, as previously reported, four-transistor static cells. Analysis of this data reveals that the hard errors fail into two classes, one that is consistent with the expected single-ion dose mechanism and another that is clearly inconsistent. In particular, the new class of hard errors is separable from the dosed cells based on irradiation conditions and the data-loss time scale and direction. Further, this damage is not additive between ion hits, does not follow "effective" LET, and is quite resistant to annealing. As a result these hard errors would accumulate over long missions and assuming the damaged element is the access transistor, can be expected in other types of storage elements with similar transistors, e.g., static RAMs and microprocessor registers. Additionally, it was found that scaling increases the susceptibility for a given ion and lowers the ion threshold, although lowered bias mitigates the damage.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/23.340540</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2043-2048 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_osti_scitechconnect_6488786 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Capacitors DATA DATA ANALYSIS DRAM chips Electronics ERRORS Exact sciences and technology EXPERIMENTAL DATA INFORMATION INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Laboratories MEMORY DEVICES Microprocessors NUMERICAL DATA PHYSICAL RADIATION EFFECTS Propulsion RADIATION EFFECTS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems Random access memory Registers SPACE FLIGHT Space technology Testing Testing, measurement, noise and reliability |
| title | A new class of single event hard errors [DRAM cells] |
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