High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum DC current gain values up to 420 for a base doping level of 4*10/sup 18/ cm/sup -3/. Small-signal measurements on self...

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Veröffentlicht in:	IEEE electron device letters 1993-01, Vol.14 (1), p.19-21
Hauptverfasser:	Lunardi, L.M., Chandrasekhar, S., Hamm, R.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) AMPLIFICATION Applied sciences Area measurement ARSENIC COMPOUNDS ARSENIDES Cutoff frequency DESIGN Doping ELECTRICAL PROPERTIES Electronics ENGINEERING EPITAXY Exact sciences and technology FABRICATION FEASIBILITY STUDIES Frequency measurement GAIN Gain measurement GALLIUM ARSENIDES GALLIUM COMPOUNDS Heterojunction bipolar transistors HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS Indium gallium arsenide Indium phosphide INDIUM PHOSPHIDES Integrated circuit measurements JUNCTION TRANSISTORS JUNCTIONS Molecular beam epitaxial growth MOLECULAR BEAM EPITAXY OPERATION PHOSPHIDES PHOSPHORUS COMPOUNDS PHYSICAL PROPERTIES PNICTIDES SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS TRANSISTORS
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