Design modeling of high-efficiency p+-n indium phosphide solar cells

A parametric study of p( )-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 10(17 ) cm(-3). The variation of minority...

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Veröffentlicht in:	IEEE transactions on electron devices 1993, Vol.40 (1), p.224-227
Hauptverfasser:	JAIN, R. K, FLOOD, D. J
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion Applied sciences CHARGE CARRIERS COMPUTER CODES DESIGN DIRECT ENERGY CONVERTERS DOPED MATERIALS EFFICIENCY Electronics ENERGY EFFICIENCY Exact sciences and technology IMPURITIES INDIUM PHOSPHIDE SOLAR CELLS JUNCTIONS MATERIALS MATHEMATICAL MODELS Optoelectronic devices P CODES P-N JUNCTIONS PARAMETRIC ANALYSIS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT
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Zusammenfassung:	A parametric study of p( )-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 10(17 ) cm(-3). The variation of minority-carrier diffusion length as a function of base doping has been included. Using realistic values of electronic and material parameters, cell efficiencies in excess of 24% AM0 (25 deg C) are predicted
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.249448