Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts

We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing int...

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Veröffentlicht in:	Applied physics letters 1990-10, Vol.57 (17), p.1811-1813
Hauptverfasser:	KLEINSASSER, A. W, JACKSON, T. N, MCINTURFF, D, RAMMO, F, PETTIT, G. D, WOODALL, J. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences ARSENIC COMPOUNDS ARSENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRIC CONDUCTIVITY ELECTRIC CONTACTS ELECTRICAL EQUIPMENT ELECTRICAL PROPERTIES Electronics ELEMENTS Exact sciences and technology FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS JUNCTIONS METALS NIOBIUM PHYSICAL PROPERTIES PNICTIDES PROXIMITY EFFECT SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS Superconducting devices SUPERCONDUCTING JUNCTIONS SUPERCONDUCTIVITY THERMODYNAMIC PROPERTIES TRANSISTORS TRANSITION ELEMENTS 426001 > Engineering-- Superconducting Devices & Circuits-- (1990-) TRANSITION TEMPERATURE TUNNEL EFFECT
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