Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films
Recently there has been an interest in using inorganic and organometallic compounds as precursors for the synthesis of inorganic thin films by chemical vapor deposition (CVD). In the CVD process, reactions are thought to occur both in the gas phase and at the gas phase-substrate surface interface. H...
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| Veröffentlicht in: | Journal of the American Chemical Society 1990-10, Vol.112 (21), p.7833-7835 |
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| container_end_page | 7835 |
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| container_title | Journal of the American Chemical Society |
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| creator | Fix, Renaud M Gordon, Roy G Hoffman, David M |
| description | Recently there has been an interest in using inorganic and organometallic compounds as precursors for the synthesis of inorganic thin films by chemical vapor deposition (CVD). In the CVD process, reactions are thought to occur both in the gas phase and at the gas phase-substrate surface interface. Herein the authors show that solution-phase chemistry is applicable to a CVD system by synthesizing thin films of M{sub 3}N{sub 4} (M = Zr, Nb) from M(NR{sub 2}){sub 4} and ammonia precursors at low temperatures. They also describe the synthesis of films with stoichiometries Mo{sub 2}N{sub 3} and VN from M(NMe{sub 2}){sub 4} and ammonia. |
| doi_str_mv | 10.1021/ja00177a075 |
| format | Article |
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They also describe the synthesis of films with stoichiometries Mo{sub 2}N{sub 3} and VN from M(NMe{sub 2}){sub 4} and ammonia.</description><identifier>ISSN: 0002-7863</identifier><identifier>EISSN: 1520-5126</identifier><identifier>DOI: 10.1021/ja00177a075</identifier><identifier>CODEN: JACSAT</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication ; AMMONIA ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; Condensed matter: structure, mechanical and thermal properties ; DATA ; DEPOSITION ; ELEMENTS ; Exact sciences and technology ; EXPERIMENTAL DATA ; HIGH TEMPERATURE ; HYDRIDES ; HYDROGEN COMPOUNDS ; INFORMATION ; MATERIALS SCIENCE ; METALS ; NEODYMIUM COMPOUNDS ; NEODYMIUM NITRIDES ; NITRIDES ; NITROGEN COMPOUNDS ; NITROGEN HYDRIDES ; NUMERICAL DATA ; Physics ; PNICTIDES ; RARE EARTH COMPOUNDS ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; SURFACE COATING ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; THIN FILMS ; TRANSITION ELEMENT COMPOUNDS ; TRANSITION ELEMENTS ; ZIRCONIUM COMPOUNDS ; ZIRCONIUM NITRIDES</subject><ispartof>Journal of the American Chemical Society, 1990-10, Vol.112 (21), p.7833-7835</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a424t-6dff20f9e408cd4325446072f196e796008c99ebfd435428450ad639c0c5c8da3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/ja00177a075$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/ja00177a075$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>230,314,780,784,885,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19808194$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6181712$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Fix, Renaud M</creatorcontrib><creatorcontrib>Gordon, Roy G</creatorcontrib><creatorcontrib>Hoffman, David M</creatorcontrib><title>Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films</title><title>Journal of the American Chemical Society</title><addtitle>J. Am. Chem. Soc</addtitle><description>Recently there has been an interest in using inorganic and organometallic compounds as precursors for the synthesis of inorganic thin films by chemical vapor deposition (CVD). In the CVD process, reactions are thought to occur both in the gas phase and at the gas phase-substrate surface interface. Herein the authors show that solution-phase chemistry is applicable to a CVD system by synthesizing thin films of M{sub 3}N{sub 4} (M = Zr, Nb) from M(NR{sub 2}){sub 4} and ammonia precursors at low temperatures. They also describe the synthesis of films with stoichiometries Mo{sub 2}N{sub 3} and VN from M(NMe{sub 2}){sub 4} and ammonia.</description><subject>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication</subject><subject>AMMONIA</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>DATA</subject><subject>DEPOSITION</subject><subject>ELEMENTS</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>HIGH TEMPERATURE</subject><subject>HYDRIDES</subject><subject>HYDROGEN COMPOUNDS</subject><subject>INFORMATION</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>NEODYMIUM COMPOUNDS</subject><subject>NEODYMIUM NITRIDES</subject><subject>NITRIDES</subject><subject>NITROGEN COMPOUNDS</subject><subject>NITROGEN HYDRIDES</subject><subject>NUMERICAL DATA</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RARE EARTH COMPOUNDS</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>SURFACE COATING</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>THIN FILMS</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><subject>TRANSITION ELEMENTS</subject><subject>ZIRCONIUM COMPOUNDS</subject><subject>ZIRCONIUM NITRIDES</subject><issn>0002-7863</issn><issn>1520-5126</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNptkE-LFDEQxYMoOK6e_AJBEA8STdJJp_so419cUNwVj6FMV-yM3Z0myazO1U9u1hb14Kmoer96VD1C7gv-RHApnh6Ac2EMcKNvkJ3QkjMtZHuT7DjnkpmubW6TOzkfaqtkJ3bkx0WcjiXEha0jZKQJwZVwFcqJQqZAvxzDgLREWkakU_zGCs4rJijHhNSNOAcHE72CNSY64BpzuDaj0VOENJ1YSbBsMzZjqegSSvplOYaF-jDN-S655WHKeO93PSMfX7643L9m5-9evdk_O2egpCqsHbyX3PeoeOcG1UitVMuN9KJv0fQtr-O-x8--aro-pzSHoW16x5123QDNGXmw-cZcgs0uFHSji8uCrthWdMIIWaHHG-RSzDmht2sKM6STFdxeZ2z_ybjSDzd6hVxz8PVZF_Lflb7jnehV5djGhVzw-x8d0lfbmsZoe_n-wr7Vn3gjPjy3-8o_2nhw2R7iMS01mP9e8BN4GZkH</recordid><startdate>199010</startdate><enddate>199010</enddate><creator>Fix, Renaud M</creator><creator>Gordon, Roy G</creator><creator>Hoffman, David M</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>199010</creationdate><title>Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films</title><author>Fix, Renaud M ; Gordon, Roy G ; Hoffman, David M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a424t-6dff20f9e408cd4325446072f196e796008c99ebfd435428450ad639c0c5c8da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication</topic><topic>AMMONIA</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>DATA</topic><topic>DEPOSITION</topic><topic>ELEMENTS</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>HIGH TEMPERATURE</topic><topic>HYDRIDES</topic><topic>HYDROGEN COMPOUNDS</topic><topic>INFORMATION</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>NEODYMIUM COMPOUNDS</topic><topic>NEODYMIUM NITRIDES</topic><topic>NITRIDES</topic><topic>NITROGEN COMPOUNDS</topic><topic>NITROGEN HYDRIDES</topic><topic>NUMERICAL DATA</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RARE EARTH COMPOUNDS</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>SURFACE COATING</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>THIN FILMS</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><topic>TRANSITION ELEMENTS</topic><topic>ZIRCONIUM COMPOUNDS</topic><topic>ZIRCONIUM NITRIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fix, Renaud M</creatorcontrib><creatorcontrib>Gordon, Roy G</creatorcontrib><creatorcontrib>Hoffman, David M</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of the American Chemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fix, Renaud M</au><au>Gordon, Roy G</au><au>Hoffman, David M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films</atitle><jtitle>Journal of the American Chemical Society</jtitle><addtitle>J. Am. Chem. Soc</addtitle><date>1990-10</date><risdate>1990</risdate><volume>112</volume><issue>21</issue><spage>7833</spage><epage>7835</epage><pages>7833-7835</pages><issn>0002-7863</issn><eissn>1520-5126</eissn><coden>JACSAT</coden><abstract>Recently there has been an interest in using inorganic and organometallic compounds as precursors for the synthesis of inorganic thin films by chemical vapor deposition (CVD). In the CVD process, reactions are thought to occur both in the gas phase and at the gas phase-substrate surface interface. Herein the authors show that solution-phase chemistry is applicable to a CVD system by synthesizing thin films of M{sub 3}N{sub 4} (M = Zr, Nb) from M(NR{sub 2}){sub 4} and ammonia precursors at low temperatures. They also describe the synthesis of films with stoichiometries Mo{sub 2}N{sub 3} and VN from M(NMe{sub 2}){sub 4} and ammonia.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><doi>10.1021/ja00177a075</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of the American Chemical Society, 1990-10, Vol.112 (21), p.7833-7835 |
| issn | 0002-7863 1520-5126 |
| language | eng |
| recordid | cdi_osti_scitechconnect_6181712 |
| source | American Chemical Society Journals |
| subjects | 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication AMMONIA CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Condensed matter: structure, mechanical and thermal properties DATA DEPOSITION ELEMENTS Exact sciences and technology EXPERIMENTAL DATA HIGH TEMPERATURE HYDRIDES HYDROGEN COMPOUNDS INFORMATION MATERIALS SCIENCE METALS NEODYMIUM COMPOUNDS NEODYMIUM NITRIDES NITRIDES NITROGEN COMPOUNDS NITROGEN HYDRIDES NUMERICAL DATA Physics PNICTIDES RARE EARTH COMPOUNDS Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations SURFACE COATING Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology THIN FILMS TRANSITION ELEMENT COMPOUNDS TRANSITION ELEMENTS ZIRCONIUM COMPOUNDS ZIRCONIUM NITRIDES |
| title | Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films |
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