Characterization of GaAs grown on Si epitaxial layers on GaAs substrates

GaAs has been grown on 9 and 18 Å thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 Å thickness of Si on GaAs is pseudomorphic while 18 Å of Si is relaxed. Antiphase domains (APDs)...

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Veröffentlicht in:	Journal of applied physics 1991, Vol.69 (1), p.220-225
Hauptverfasser:	ADOMI, K, STRITE, S, MORKOC, H, NAKAMURA, Y, OTSUKA, N
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies Applied sciences ARSENIC COMPOUNDS ARSENIDES COHERENT SCATTERING CRYSTAL STRUCTURE DIFFRACTION DOMAIN STRUCTURE ELECTRON DIFFRACTION ELECTRON MICROSCOPY Electronics ELEMENTS EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS LAYERS MATERIALS SCIENCE MICROSCOPY MICROSTRUCTURE MOLECULAR BEAM EPITAXY MORPHOLOGY PNICTIDES SCATTERING Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMIMETALS SILICON TRANSMISSION ELECTRON MICROSCOPY
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