Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors
Freeze-out behavior of radiation hardened N polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1289-1296 |
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| container_end_page | 1296 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) |
| container_volume | 38 |
| creator | PANTELAKIS, D. C HEMMENWAY, D. F VAN VONNO, N. W SANDERS, T. J |
| description | Freeze-out behavior of radiation hardened N polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation |
| doi_str_mv | 10.1109/23.124107 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_5825970</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28301024</sourcerecordid><originalsourceid>FETCH-LOGICAL-o240t-c0fd32d9a178fbe748002f38934e7a6b219800a018632f43d7f8aabc7111b17a3</originalsourceid><addsrcrecordid>eNotj81LAzEQxYMoWKsH_4NFxItszeSjSY5S_IJqD-p5mWazNrLd1CQ9tH-9gfY0vDc_Zt4j5BroBICaB8YnwARQdUJGIKWuQSp9SkaUgq6NMOacXKT0W6SQVI7I93N0bu_qsM2VXWFEm130e8w-DFXoqoitP4iybN3g2urjfhP6XfK9t8X-weyq2fvis8oRh-RTDjFdkrMO--SujnNc_jx9zV7r-eLlbfY4rwMTNNeWdi1nrUFQuls6JTSlrOPacOEUTpcMTHGwRJ9y1gneqk4jLq0CgCUo5GNyc7gbUvZNsj47uyqpBmdzIzWTRtEC3R2gTQx_W5dys_bJur7HwYVtapjmFCgTBbw9gpgs9l3pY31qNtGvMe4aCVNBleH_KB9rKQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28301024</pqid></control><display><type>article</type><title>Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors</title><source>IEEE Electronic Library (IEL)</source><creator>PANTELAKIS, D. C ; HEMMENWAY, D. F ; VAN VONNO, N. W ; SANDERS, T. J</creator><creatorcontrib>PANTELAKIS, D. C ; HEMMENWAY, D. F ; VAN VONNO, N. W ; SANDERS, T. J</creatorcontrib><description>Freeze-out behavior of radiation hardened N polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.124107</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) ; Applied sciences ; CRYSTALS ; Design. Technologies. Operation analysis. Testing ; DOSE RATES ; ELECTRODES ; Electronics ; ELEMENTS ; ENERGY ; ENGINEERING ; Exact sciences and technology ; HARDENING ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; Integrated circuits ; MOS TRANSISTORS ; PHYSICAL RADIATION EFFECTS ; POLYCRYSTALS ; RADIATION EFFECTS ; RADIATION HARDENING ; SEMICONDUCTOR DEVICES ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SEMIMETALS ; SILICON ; TEMPERATURE RANGE ; TEMPERATURE RANGE 0065-0273 K ; THRESHOLD ENERGY ; TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1289-1296</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,776,780,785,786,881,23910,23911,25119,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5164079$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5825970$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>PANTELAKIS, D. C</creatorcontrib><creatorcontrib>HEMMENWAY, D. F</creatorcontrib><creatorcontrib>VAN VONNO, N. W</creatorcontrib><creatorcontrib>SANDERS, T. J</creatorcontrib><title>Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</title><description>Freeze-out behavior of radiation hardened N polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation</description><subject>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</subject><subject>Applied sciences</subject><subject>CRYSTALS</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>DOSE RATES</subject><subject>ELECTRODES</subject><subject>Electronics</subject><subject>ELEMENTS</subject><subject>ENERGY</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>HARDENING</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>Integrated circuits</subject><subject>MOS TRANSISTORS</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>POLYCRYSTALS</subject><subject>RADIATION EFFECTS</subject><subject>RADIATION HARDENING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>TEMPERATURE RANGE</subject><subject>TEMPERATURE RANGE 0065-0273 K</subject><subject>THRESHOLD ENERGY</subject><subject>TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNotj81LAzEQxYMoWKsH_4NFxItszeSjSY5S_IJqD-p5mWazNrLd1CQ9tH-9gfY0vDc_Zt4j5BroBICaB8YnwARQdUJGIKWuQSp9SkaUgq6NMOacXKT0W6SQVI7I93N0bu_qsM2VXWFEm130e8w-DFXoqoitP4iybN3g2urjfhP6XfK9t8X-weyq2fvis8oRh-RTDjFdkrMO--SujnNc_jx9zV7r-eLlbfY4rwMTNNeWdi1nrUFQuls6JTSlrOPacOEUTpcMTHGwRJ9y1gneqk4jLq0CgCUo5GNyc7gbUvZNsj47uyqpBmdzIzWTRtEC3R2gTQx_W5dys_bJur7HwYVtapjmFCgTBbw9gpgs9l3pY31qNtGvMe4aCVNBleH_KB9rKQ</recordid><startdate>19911201</startdate><enddate>19911201</enddate><creator>PANTELAKIS, D. C</creator><creator>HEMMENWAY, D. F</creator><creator>VAN VONNO, N. W</creator><creator>SANDERS, T. J</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19911201</creationdate><title>Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors</title><author>PANTELAKIS, D. C ; HEMMENWAY, D. F ; VAN VONNO, N. W ; SANDERS, T. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o240t-c0fd32d9a178fbe748002f38934e7a6b219800a018632f43d7f8aabc7111b17a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</topic><topic>Applied sciences</topic><topic>CRYSTALS</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>DOSE RATES</topic><topic>ELECTRODES</topic><topic>Electronics</topic><topic>ELEMENTS</topic><topic>ENERGY</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>HARDENING</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>Integrated circuits</topic><topic>MOS TRANSISTORS</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>POLYCRYSTALS</topic><topic>RADIATION EFFECTS</topic><topic>RADIATION HARDENING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>TEMPERATURE RANGE</topic><topic>TEMPERATURE RANGE 0065-0273 K</topic><topic>THRESHOLD ENERGY</topic><topic>TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PANTELAKIS, D. C</creatorcontrib><creatorcontrib>HEMMENWAY, D. F</creatorcontrib><creatorcontrib>VAN VONNO, N. W</creatorcontrib><creatorcontrib>SANDERS, T. J</creatorcontrib><collection>Pascal-Francis</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PANTELAKIS, D. C</au><au>HEMMENWAY, D. F</au><au>VAN VONNO, N. W</au><au>SANDERS, T. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle><date>1991-12-01</date><risdate>1991</risdate><volume>38</volume><issue>6</issue><spage>1289</spage><epage>1296</epage><pages>1289-1296</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Freeze-out behavior of radiation hardened N polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/23.124107</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1289-1296 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5825970 |
| source | IEEE Electronic Library (IEL) |
| subjects | 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) Applied sciences CRYSTALS Design. Technologies. Operation analysis. Testing DOSE RATES ELECTRODES Electronics ELEMENTS ENERGY ENGINEERING Exact sciences and technology HARDENING INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Integrated circuits MOS TRANSISTORS PHYSICAL RADIATION EFFECTS POLYCRYSTALS RADIATION EFFECTS RADIATION HARDENING SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMIMETALS SILICON TEMPERATURE RANGE TEMPERATURE RANGE 0065-0273 K THRESHOLD ENERGY TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems |
| title | Freeze-out characterization of radiation hardened N+polysilicon gate CMOS transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T22%3A54%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Freeze-out%20characterization%20of%20radiation%20hardened%20N+polysilicon%20gate%20CMOS%20transistors&rft.jtitle=IEEE%20Transactions%20on%20Nuclear%20Science%20(Institute%20of%20Electrical%20and%20Electronics%20Engineers);%20(United%20States)&rft.au=PANTELAKIS,%20D.%20C&rft.date=1991-12-01&rft.volume=38&rft.issue=6&rft.spage=1289&rft.epage=1296&rft.pages=1289-1296&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/23.124107&rft_dat=%3Cproquest_osti_%3E28301024%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28301024&rft_id=info:pmid/&rfr_iscdi=true |