CdSe thin films : chemical deposition using N,N-dimethylselenourea and ion exchange reactions to modify electrical conductivity
Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1--0.5 [mu]m range were deposited at 24 or 50 C. The as-prepared films...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1993-10, Vol.140 (10), p.2987-2994 |
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| creator | NAIR, M. T. S NAIR, P. K PATHIRANA, H. M. K. K ZINGARO, R. A MEYERS, E. A |
| description | Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1--0.5 [mu]m range were deposited at 24 or 50 C. The as-prepared films are of poor crystallinity. On annealing in air at 450 C for 1 h, well-defined diffraction peaks matching with the hexagonal phase of CdSe are observed. These films have electrical conductivities ([sigma][sub dark]) [approximately]10[sup [minus]8] [Omega][sup [minus]1] cm[sup [minus]1] and are only weakly photosensitive. However, the photosensitivity improves to [approximately]10[sup 6] on annealing in air at 450 C. Ion-exchange reactions of the films in dilute HgCl[sub 2] solutions lead to [sigma][sub dark] [approximately]1[Omega][sup [minus]1] cm[sup [minus]1] (n-type) with low photosensitivities. Annealing of these films at temperature > 200 C leads to a reduction in [sigma][sub dark] while it enhances the photosensitivity. Immersion of the CdSe films in dilute CuCl[sub 2] solution makes the films p-type, [sigma][sub dark] [approximately] 0.1 [Omega][sup [minus]1] cm[sup [minus]1]. Annealing of these films at temperature > 200 C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion-exchange reactions. |
| doi_str_mv | 10.1149/1.2220944 |
| format | Article |
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T. S ; NAIR, P. K ; PATHIRANA, H. M. K. K ; ZINGARO, R. A ; MEYERS, E. A</creator><creatorcontrib>NAIR, M. T. S ; NAIR, P. K ; PATHIRANA, H. M. K. K ; ZINGARO, R. A ; MEYERS, E. A</creatorcontrib><description>Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1--0.5 [mu]m range were deposited at 24 or 50 C. The as-prepared films are of poor crystallinity. On annealing in air at 450 C for 1 h, well-defined diffraction peaks matching with the hexagonal phase of CdSe are observed. These films have electrical conductivities ([sigma][sub dark]) [approximately]10[sup [minus]8] [Omega][sup [minus]1] cm[sup [minus]1] and are only weakly photosensitive. However, the photosensitivity improves to [approximately]10[sup 6] on annealing in air at 450 C. Ion-exchange reactions of the films in dilute HgCl[sub 2] solutions lead to [sigma][sub dark] [approximately]1[Omega][sup [minus]1] cm[sup [minus]1] (n-type) with low photosensitivities. Annealing of these films at temperature > 200 C leads to a reduction in [sigma][sub dark] while it enhances the photosensitivity. Immersion of the CdSe films in dilute CuCl[sub 2] solution makes the films p-type, [sigma][sub dark] [approximately] 0.1 [Omega][sup [minus]1] cm[sup [minus]1]. Annealing of these films at temperature > 200 C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion-exchange reactions.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2220944</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>360601 - Other Materials- Preparation & Manufacture ; 360606 - Other Materials- Physical Properties- (1992-) ; AMIDES ; ANNEALING ; CADMIUM COMPOUNDS ; CADMIUM SELENIDES ; CARBONIC ACID DERIVATIVES ; CHALCOGENIDES ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; COATINGS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; DATA ; DEPOSITION ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; EXPERIMENTAL DATA ; HEAT TREATMENTS ; INFORMATION ; ION EXCHANGE ; Low-field transport and mobility; piezoresistance ; MATERIALS SCIENCE ; Methods of deposition of films and coatings; film growth and epitaxy ; NUMERICAL DATA ; ORGANIC COMPOUNDS ; ORGANIC NITROGEN COMPOUNDS ; Photoconduction and photovoltaic effects ; Photoconduction and photovoltaic effects; photodielectric effects ; PHOTOSENSITIVITY ; PHYSICAL PROPERTIES ; Physics ; SELENIDES ; SELENIUM COMPOUNDS ; SENSITIVITY ; SURFACE COATING ; UREA ; VAPOR DEPOSITED COATINGS</subject><ispartof>Journal of the Electrochemical Society, 1993-10, Vol.140 (10), p.2987-2994</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-4425d486e88e9c63db0ca647c9642f0acb888028892e706c9c87aee386267ec03</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3949796$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5788256$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>NAIR, M. T. S</creatorcontrib><creatorcontrib>NAIR, P. K</creatorcontrib><creatorcontrib>PATHIRANA, H. M. K. K</creatorcontrib><creatorcontrib>ZINGARO, R. A</creatorcontrib><creatorcontrib>MEYERS, E. A</creatorcontrib><title>CdSe thin films : chemical deposition using N,N-dimethylselenourea and ion exchange reactions to modify electrical conductivity</title><title>Journal of the Electrochemical Society</title><description>Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1--0.5 [mu]m range were deposited at 24 or 50 C. The as-prepared films are of poor crystallinity. On annealing in air at 450 C for 1 h, well-defined diffraction peaks matching with the hexagonal phase of CdSe are observed. These films have electrical conductivities ([sigma][sub dark]) [approximately]10[sup [minus]8] [Omega][sup [minus]1] cm[sup [minus]1] and are only weakly photosensitive. However, the photosensitivity improves to [approximately]10[sup 6] on annealing in air at 450 C. Ion-exchange reactions of the films in dilute HgCl[sub 2] solutions lead to [sigma][sub dark] [approximately]1[Omega][sup [minus]1] cm[sup [minus]1] (n-type) with low photosensitivities. Annealing of these films at temperature > 200 C leads to a reduction in [sigma][sub dark] while it enhances the photosensitivity. Immersion of the CdSe films in dilute CuCl[sub 2] solution makes the films p-type, [sigma][sub dark] [approximately] 0.1 [Omega][sup [minus]1] cm[sup [minus]1]. Annealing of these films at temperature > 200 C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion-exchange reactions.</description><subject>360601 - Other Materials- Preparation & Manufacture</subject><subject>360606 - Other Materials- Physical Properties- (1992-)</subject><subject>AMIDES</subject><subject>ANNEALING</subject><subject>CADMIUM COMPOUNDS</subject><subject>CADMIUM SELENIDES</subject><subject>CARBONIC ACID DERIVATIVES</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>COATINGS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>DATA</subject><subject>DEPOSITION</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>HEAT TREATMENTS</subject><subject>INFORMATION</subject><subject>ION EXCHANGE</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>MATERIALS SCIENCE</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>NUMERICAL DATA</subject><subject>ORGANIC COMPOUNDS</subject><subject>ORGANIC NITROGEN COMPOUNDS</subject><subject>Photoconduction and photovoltaic effects</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>PHOTOSENSITIVITY</subject><subject>PHYSICAL PROPERTIES</subject><subject>Physics</subject><subject>SELENIDES</subject><subject>SELENIUM COMPOUNDS</subject><subject>SENSITIVITY</subject><subject>SURFACE COATING</subject><subject>UREA</subject><subject>VAPOR DEPOSITED COATINGS</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKsHv0EQL4KrSTabTbxJ8R-UelDPSzo72410s2WTij351U1t8TTM8HuPN4-Qc85uOJfmlt8IIZiR8oCMuJFFVnLOD8mIMZ5nUhX8mJyE8JlWrmU5Ij-T-g1pbJ2njVt2gd5RaLFzYJe0xlUfXHS9p-vg_ILOrmdZ7TqM7WYZcIm-Xw9oqfU13UL4Da31C6TpCFtZoLGnXV-7ZkMTDnH484Xe1-sEfLm4OSVHjU1mZ_s5Jh-PD--T52z6-vQyuZ9mkIsiZlKKopZaodZoQOX1nIFVsgSjpGiYhbnWmgmtjcCSKTCgS4uYayVUicDyMbnY-fYhuiqAiwhtCuJTqqootRaFStDVDoKhD2HAploNrrPDpuKs2tZb8Wpfb2Ivd-zKhvRUM1gPLvwLciNNaVT-C6hPeoo</recordid><startdate>19931001</startdate><enddate>19931001</enddate><creator>NAIR, M. T. S</creator><creator>NAIR, P. K</creator><creator>PATHIRANA, H. M. K. K</creator><creator>ZINGARO, R. A</creator><creator>MEYERS, E. A</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19931001</creationdate><title>CdSe thin films : chemical deposition using N,N-dimethylselenourea and ion exchange reactions to modify electrical conductivity</title><author>NAIR, M. T. S ; NAIR, P. K ; PATHIRANA, H. M. K. K ; ZINGARO, R. A ; MEYERS, E. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-4425d486e88e9c63db0ca647c9642f0acb888028892e706c9c87aee386267ec03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>360601 - Other Materials- Preparation & Manufacture</topic><topic>360606 - Other Materials- Physical Properties- (1992-)</topic><topic>AMIDES</topic><topic>ANNEALING</topic><topic>CADMIUM COMPOUNDS</topic><topic>CADMIUM SELENIDES</topic><topic>CARBONIC ACID DERIVATIVES</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>COATINGS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>DATA</topic><topic>DEPOSITION</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>HEAT TREATMENTS</topic><topic>INFORMATION</topic><topic>ION EXCHANGE</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>MATERIALS SCIENCE</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>NUMERICAL DATA</topic><topic>ORGANIC COMPOUNDS</topic><topic>ORGANIC NITROGEN COMPOUNDS</topic><topic>Photoconduction and photovoltaic effects</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>PHOTOSENSITIVITY</topic><topic>PHYSICAL PROPERTIES</topic><topic>Physics</topic><topic>SELENIDES</topic><topic>SELENIUM COMPOUNDS</topic><topic>SENSITIVITY</topic><topic>SURFACE COATING</topic><topic>UREA</topic><topic>VAPOR DEPOSITED COATINGS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAIR, M. T. S</creatorcontrib><creatorcontrib>NAIR, P. K</creatorcontrib><creatorcontrib>PATHIRANA, H. M. K. K</creatorcontrib><creatorcontrib>ZINGARO, R. A</creatorcontrib><creatorcontrib>MEYERS, E. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAIR, M. T. S</au><au>NAIR, P. K</au><au>PATHIRANA, H. M. K. K</au><au>ZINGARO, R. A</au><au>MEYERS, E. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CdSe thin films : chemical deposition using N,N-dimethylselenourea and ion exchange reactions to modify electrical conductivity</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1993-10-01</date><risdate>1993</risdate><volume>140</volume><issue>10</issue><spage>2987</spage><epage>2994</epage><pages>2987-2994</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1--0.5 [mu]m range were deposited at 24 or 50 C. The as-prepared films are of poor crystallinity. On annealing in air at 450 C for 1 h, well-defined diffraction peaks matching with the hexagonal phase of CdSe are observed. These films have electrical conductivities ([sigma][sub dark]) [approximately]10[sup [minus]8] [Omega][sup [minus]1] cm[sup [minus]1] and are only weakly photosensitive. However, the photosensitivity improves to [approximately]10[sup 6] on annealing in air at 450 C. Ion-exchange reactions of the films in dilute HgCl[sub 2] solutions lead to [sigma][sub dark] [approximately]1[Omega][sup [minus]1] cm[sup [minus]1] (n-type) with low photosensitivities. Annealing of these films at temperature > 200 C leads to a reduction in [sigma][sub dark] while it enhances the photosensitivity. Immersion of the CdSe films in dilute CuCl[sub 2] solution makes the films p-type, [sigma][sub dark] [approximately] 0.1 [Omega][sup [minus]1] cm[sup [minus]1]. Annealing of these films at temperature > 200 C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion-exchange reactions.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2220944</doi><tpages>8</tpages></addata></record> |
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| ispartof | Journal of the Electrochemical Society, 1993-10, Vol.140 (10), p.2987-2994 |
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| source | IOP Publishing Journals |
| subjects | 360601 - Other Materials- Preparation & Manufacture 360606 - Other Materials- Physical Properties- (1992-) AMIDES ANNEALING CADMIUM COMPOUNDS CADMIUM SELENIDES CARBONIC ACID DERIVATIVES CHALCOGENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION COATINGS Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology DATA DEPOSITION ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology EXPERIMENTAL DATA HEAT TREATMENTS INFORMATION ION EXCHANGE Low-field transport and mobility piezoresistance MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy NUMERICAL DATA ORGANIC COMPOUNDS ORGANIC NITROGEN COMPOUNDS Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects PHOTOSENSITIVITY PHYSICAL PROPERTIES Physics SELENIDES SELENIUM COMPOUNDS SENSITIVITY SURFACE COATING UREA VAPOR DEPOSITED COATINGS |
| title | CdSe thin films : chemical deposition using N,N-dimethylselenourea and ion exchange reactions to modify electrical conductivity |
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