Scaling relations for strained-layer relaxation
Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a giv...
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| Veröffentlicht in: | Applied physics letters 1989-09, Vol.55 (13), p.1345-1347 |
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| container_title | Applied physics letters |
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| creator | DODSON, B. W TSAO, J. Y |
| description | Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a given material system can be predicted over a wide range of structural parameters and temperature history based on a single relaxation measurement. This scaling treatment should prove useful in optimization of practical strained-layer device structures. |
| doi_str_mv | 10.1063/1.101594 |
| format | Article |
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W</creatorcontrib><creatorcontrib>TSAO, J. Y</creatorcontrib><title>Scaling relations for strained-layer relaxation</title><title>Applied physics letters</title><description>Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a given material system can be predicted over a wide range of structural parameters and temperature history based on a single relaxation measurement. This scaling treatment should prove useful in optimization of practical strained-layer device structures.</description><subject>360603 - Materials- Properties</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>CREEP</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL STRUCTURE</subject><subject>DEFORMATION</subject><subject>DESIGN</subject><subject>DIMENSIONS</subject><subject>DISLOCATIONS</subject><subject>Exact sciences and technology</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>LINE DEFECTS</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>MATERIALS SCIENCE</subject><subject>MECHANICAL PROPERTIES</subject><subject>NUCLEATION</subject><subject>OPTIMIZATION</subject><subject>Physics</subject><subject>PLASTICITY</subject><subject>PNICTIDES</subject><subject>RELAXATION</subject><subject>SCALING LAWS</subject><subject>STABILITY</subject><subject>STRAINS</subject><subject>STRESS RELAXATION</subject><subject>SUPERLATTICES</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>THICKNESS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LxDAUxIMouK6CH2ERD17qvtf0JelRFv_Bggf1HNLXRCO1XZIe3G9vteJpGObHwIwQ5wjXCEqucRKkujoQCwStC4loDsUCAGShasJjcZLzx2SplHIh1s_suti_rZLv3BiHPq_CkFZ5TC72vi06t_fpN_z6jU_FUXBd9md_uhSvd7cvm4di-3T_uLnZFlwaHIugmLwPJBnJNGja4NuWibQmCaVuqEGoGtRNY0pkDd6Vqq5aXbfMDoySS3Ex9w55jDZzHD2_89D3nkdLigCMnKCrGeI05Jx8sLsUP13aWwT784ZFO78xoZczunN5WhyS6znmf15pUpUy8htPbF0Z</recordid><startdate>19890925</startdate><enddate>19890925</enddate><creator>DODSON, B. 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Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-f6c5eef53c158b18dfeddc557753027b5b104b17bb821c70ea2694d79dcca0863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360603 - Materials- Properties</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>CREEP</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL STRUCTURE</topic><topic>DEFORMATION</topic><topic>DESIGN</topic><topic>DIMENSIONS</topic><topic>DISLOCATIONS</topic><topic>Exact sciences and technology</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>LINE DEFECTS</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>MATERIALS SCIENCE</topic><topic>MECHANICAL PROPERTIES</topic><topic>NUCLEATION</topic><topic>OPTIMIZATION</topic><topic>Physics</topic><topic>PLASTICITY</topic><topic>PNICTIDES</topic><topic>RELAXATION</topic><topic>SCALING LAWS</topic><topic>STABILITY</topic><topic>STRAINS</topic><topic>STRESS RELAXATION</topic><topic>SUPERLATTICES</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>THICKNESS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DODSON, B. W</creatorcontrib><creatorcontrib>TSAO, J. Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DODSON, B. W</au><au>TSAO, J. Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Scaling relations for strained-layer relaxation</atitle><jtitle>Applied physics letters</jtitle><date>1989-09-25</date><risdate>1989</risdate><volume>55</volume><issue>13</issue><spage>1345</spage><epage>1347</epage><pages>1345-1347</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a given material system can be predicted over a wide range of structural parameters and temperature history based on a single relaxation measurement. This scaling treatment should prove useful in optimization of practical strained-layer device structures.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.101594</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1989-09, Vol.55 (13), p.1345-1347 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5650083 |
| source | AIP Digital Archive |
| subjects | 360603 - Materials- Properties ARSENIC COMPOUNDS ARSENIDES Condensed matter: structure, mechanical and thermal properties CREEP CRYSTAL DEFECTS CRYSTAL GROWTH CRYSTAL STRUCTURE DEFORMATION DESIGN DIMENSIONS DISLOCATIONS Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS INTERFACES LAYERS LINE DEFECTS Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties MATERIALS SCIENCE MECHANICAL PROPERTIES NUCLEATION OPTIMIZATION Physics PLASTICITY PNICTIDES RELAXATION SCALING LAWS STABILITY STRAINS STRESS RELAXATION SUPERLATTICES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) THICKNESS |
| title | Scaling relations for strained-layer relaxation |
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