Optical scatter in epitaxial semiconductor multilayers

We report measurements of optical scatter in epitaxial semiconductor multilayer structures. The structures comprise quarter-wave layers of Al0.2Ga0.8As/AlAs and GaAs/AlAs grown by molecular beam epitaxy and Al0.2Ga0.8As/AlAs grown by metalorganic chemical vapor deposition to assess differences due t...

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Veröffentlicht in:	Applied physics letters 1991-04, Vol.58 (13), p.1360-1362
Hauptverfasser:	GOURLEY, P. L, DAWSON, L. R, BRENNAN, T. M, HAMMONS, B. E, STOVER, J. C, SCHAUS, C. F, SUN, S
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Condensed matter: electronic structure, electrical, magnetic, and optical properties DEPOSITION EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS LASER MATERIALS LASER MIRRORS LASERS LIGHT SCATTERING MATERIALS MATERIALS SCIENCE MIRRORS MOLECULAR BEAM EPITAXY NATIONAL ORGANIZATIONS OPTICAL PROPERTIES Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films PHYSICAL PROPERTIES Physics PNICTIDES REFLECTIVITY SANDIA LABORATORIES SCATTERING SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS SUPERLATTICES SURFACE COATING SURFACE PROPERTIES US AEC US DOE US ERDA US ORGANIZATIONS
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