Growth of gallium arsenide on hydrogen passivated Si with low-temperature treatment (∼600 °C)

Epitaxial growth of GaAs on Si commonly employs a high-temperature (≳850 °C) oxide desorption step. In this letter, we report the first epitaxial growth of GaAs on Si without the need for this high-temperature treatment. This method utilizes a final HF treatment whereby the Si surface dangling bonds...

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