Transient nucleation following pulsed-laser melting of thin silicon films
Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For q...
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Veröffentlicht in: | Physical review. B, Condensed matter Condensed matter, 1991-04, Vol.43 (12), p.9851-9855 |
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creator | STIFFLER, S. R THOMPSON, M. O PEERCY, P. S |
description | Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For quenches below {similar to}10{sup 10} K/s the supercooling prior to nucleation was constant and {similar to}500 K; however, for more rapid quenches, the supercooling increases significantly. This increase is attributed to embryo distributions that fall out of steady state during rapid quenches. |
doi_str_mv | 10.1103/physrevb.43.9851 |
format | Article |
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This increase is attributed to embryo distributions that fall out of steady state during rapid quenches.</description><identifier>ISSN: 0163-1829</identifier><identifier>EISSN: 1095-3795</identifier><identifier>DOI: 10.1103/physrevb.43.9851</identifier><identifier>PMID: 9996687</identifier><identifier>CODEN: PRBMDO</identifier><language>eng</language><publisher>Woodbury, NY: American Physical Society</publisher><subject>360603 - Materials- Properties ; Condensed matter: structure, mechanical and thermal properties ; CRYSTAL STRUCTURE ; ELEMENTS ; Exact sciences and technology ; HEATING ; LASER-RADIATION HEATING ; MATERIALS SCIENCE ; MELTING ; NUCLEATION ; PHASE TRANSFORMATIONS ; Physics ; PLASMA HEATING ; PULSES ; SEMIMETALS ; SILICON ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; THIN FILMS</subject><ispartof>Physical review. 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R</creatorcontrib><creatorcontrib>THOMPSON, M. O</creatorcontrib><creatorcontrib>PEERCY, P. S</creatorcontrib><title>Transient nucleation following pulsed-laser melting of thin silicon films</title><title>Physical review. B, Condensed matter</title><addtitle>Phys Rev B Condens Matter</addtitle><description>Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For quenches below {similar to}10{sup 10} K/s the supercooling prior to nucleation was constant and {similar to}500 K; however, for more rapid quenches, the supercooling increases significantly. This increase is attributed to embryo distributions that fall out of steady state during rapid quenches.</description><subject>360603 - Materials- Properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>CRYSTAL STRUCTURE</subject><subject>ELEMENTS</subject><subject>Exact sciences and technology</subject><subject>HEATING</subject><subject>LASER-RADIATION HEATING</subject><subject>MATERIALS SCIENCE</subject><subject>MELTING</subject><subject>NUCLEATION</subject><subject>PHASE TRANSFORMATIONS</subject><subject>Physics</subject><subject>PLASMA HEATING</subject><subject>PULSES</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>THIN FILMS</subject><issn>0163-1829</issn><issn>1095-3795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpFkMtLxDAQh4Mouj7uXoQiCF665tG0yVEXXyAosp5Dmk7dSNquTbqy_70pW3QuAzPf_Bg-hM4JnhOC2c16tfU9bMp5xuZScLKHZgRLnrJC8n00wyRnKRFUHqFj779wLJrLQ3QopcxzUczQ87LXrbfQhqQdjAMdbNcmdedc92Pbz2Q9OA9V6rSHPmnAhXHY1UlY2Tbx1lkz4tY1_hQd1DrCZ1M_QR8P98vFU_ry-vi8uH1JTUZkSGmBy5oLUjCRS86IpkaXIGoahwCCGSxoVgqDQWBdcY5NyeoqK3SlC5FJyU7Q5S6388Eqb2wAs4pftGCC4nyMLiJ0vYPWffc9gA-qsd6Ac7qFbvCKCC5pXhAiIop3qOk7H2XWat3bRvdbRbAaJau3KPkdNncqY2qUHE8upvShbKD6O5isxv3VtNfeaFdHxcb6_9wxJKeU_QKfJobg</recordid><startdate>19910415</startdate><enddate>19910415</enddate><creator>STIFFLER, S. 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S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-270bf58173869531a2cabe8f2f58ee83c0824b8c0e80ad550cb3fd47ada784993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>360603 - Materials- Properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>CRYSTAL STRUCTURE</topic><topic>ELEMENTS</topic><topic>Exact sciences and technology</topic><topic>HEATING</topic><topic>LASER-RADIATION HEATING</topic><topic>MATERIALS SCIENCE</topic><topic>MELTING</topic><topic>NUCLEATION</topic><topic>PHASE TRANSFORMATIONS</topic><topic>Physics</topic><topic>PLASMA HEATING</topic><topic>PULSES</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>THIN FILMS</topic><toplevel>online_resources</toplevel><creatorcontrib>STIFFLER, S. R</creatorcontrib><creatorcontrib>THOMPSON, M. O</creatorcontrib><creatorcontrib>PEERCY, P. S</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>STIFFLER, S. R</au><au>THOMPSON, M. O</au><au>PEERCY, P. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transient nucleation following pulsed-laser melting of thin silicon films</atitle><jtitle>Physical review. B, Condensed matter</jtitle><addtitle>Phys Rev B Condens Matter</addtitle><date>1991-04-15</date><risdate>1991</risdate><volume>43</volume><issue>12</issue><spage>9851</spage><epage>9855</epage><pages>9851-9855</pages><issn>0163-1829</issn><eissn>1095-3795</eissn><coden>PRBMDO</coden><abstract>Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For quenches below {similar to}10{sup 10} K/s the supercooling prior to nucleation was constant and {similar to}500 K; however, for more rapid quenches, the supercooling increases significantly. This increase is attributed to embryo distributions that fall out of steady state during rapid quenches.</abstract><cop>Woodbury, NY</cop><pub>American Physical Society</pub><pmid>9996687</pmid><doi>10.1103/physrevb.43.9851</doi><tpages>5</tpages></addata></record> |
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subjects | 360603 - Materials- Properties Condensed matter: structure, mechanical and thermal properties CRYSTAL STRUCTURE ELEMENTS Exact sciences and technology HEATING LASER-RADIATION HEATING MATERIALS SCIENCE MELTING NUCLEATION PHASE TRANSFORMATIONS Physics PLASMA HEATING PULSES SEMIMETALS SILICON Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology THIN FILMS |
title | Transient nucleation following pulsed-laser melting of thin silicon films |
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