Transient nucleation following pulsed-laser melting of thin silicon films

Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For q...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1991-04, Vol.43 (12), p.9851-9855
Hauptverfasser: STIFFLER, S. R, THOMPSON, M. O, PEERCY, P. S
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container_issue 12
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container_title Physical review. B, Condensed matter
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creator STIFFLER, S. R
THOMPSON, M. O
PEERCY, P. S
description Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For quenches below {similar to}10{sup 10} K/s the supercooling prior to nucleation was constant and {similar to}500 K; however, for more rapid quenches, the supercooling increases significantly. This increase is attributed to embryo distributions that fall out of steady state during rapid quenches.
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B, Condensed matter</jtitle><addtitle>Phys Rev B Condens Matter</addtitle><date>1991-04-15</date><risdate>1991</risdate><volume>43</volume><issue>12</issue><spage>9851</spage><epage>9855</epage><pages>9851-9855</pages><issn>0163-1829</issn><eissn>1095-3795</eissn><coden>PRBMDO</coden><abstract>Thin Si films on thermally grown SiO{sub 2} layers were completely melted by pulsed-laser irradiation. The molten films cool very rapidly ({gt}10{sup 9} K/s) until bulk nucleation initiates solidification. The quench rate was varied by changing the thickness of the Si or the SiO{sub 2} layers. For quenches below {similar to}10{sup 10} K/s the supercooling prior to nucleation was constant and {similar to}500 K; however, for more rapid quenches, the supercooling increases significantly. 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subjects 360603 - Materials- Properties
Condensed matter: structure, mechanical and thermal properties
CRYSTAL STRUCTURE
ELEMENTS
Exact sciences and technology
HEATING
LASER-RADIATION HEATING
MATERIALS SCIENCE
MELTING
NUCLEATION
PHASE TRANSFORMATIONS
Physics
PLASMA HEATING
PULSES
SEMIMETALS
SILICON
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
THIN FILMS
title Transient nucleation following pulsed-laser melting of thin silicon films
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