Electrical and structural changes in the near surface of reactively ion etched InP
Near-surface (∼1000 Å) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to th...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1989-10, Vol.55 (16), p.1633-1635 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1635 |
|---|---|
| container_issue | 16 |
| container_start_page | 1633 |
| container_title | Applied physics letters |
| container_volume | 55 |
| creator | PEARTON, S. J CHAKRABARTI, U. K BAIOCCHI, F. A |
| description | Near-surface (∼1000 Å) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 Å after C2H6/H2 RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples. |
| doi_str_mv | 10.1063/1.102221 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_5489990</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6741669</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-b5a8114bf9f7e920e98d0ec7ef70127912a5d030a49f34be9d98878c03e196fa3</originalsourceid><addsrcrecordid>eNo9kMFKxDAURYMoOI6CnxDEhZtqXtM2zVKGUQcGFNF1yby-2EhNhyQV5u-tVFxdLhwu3MPYJYhbEJW8gynyPIcjtgChVCYB6mO2EELIrNIlnLKzGD-nWuZSLtjruidMwaHpufEtjymMmMYwVeyM_6DIneepI-7JBB7HYA0SHywPZDC5b-oP3A2eU8KOWr7xL-fsxJo-0sVfLtn7w_pt9ZRtnx83q_tthrJQKduVpgYodlZbRToXpOtWECqySkCuNOSmbIUUptBWFjvSra5rVaOQBLqyRi7Z1bw7xOSaiC4Rdjh4Px1qyqLWWosJupkhDEOMgWyzD-7LhEMDovkV1kAzC5vQ6xndmzjpsMF4dPGfr1QBVaXlD0iIaNM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrical and structural changes in the near surface of reactively ion etched InP</title><source>AIP Digital Archive</source><creator>PEARTON, S. J ; CHAKRABARTI, U. K ; BAIOCCHI, F. A</creator><creatorcontrib>PEARTON, S. J ; CHAKRABARTI, U. K ; BAIOCCHI, F. A</creatorcontrib><description>Near-surface (∼1000 Å) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 Å after C2H6/H2 RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.102221</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360605 - Materials- Radiation Effects ; ANNEALING ; BEAMS ; CARRIER DENSITY ; CHARGE CARRIERS ; COLLISIONS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; ELECTRIC DISCHARGES ; ELECTRONIC STRUCTURE ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; ETCHING ; Exact sciences and technology ; FABRICATION ; HEAT TREATMENTS ; HIGH TEMPERATURE ; IMPURITIES ; INDIUM COMPOUNDS ; INDIUM PHOSPHIDES ; ION BEAMS ; ION COLLISIONS ; MATERIALS SCIENCE ; PHOSPHIDES ; PHOSPHORUS COMPOUNDS ; PHYSICAL RADIATION EFFECTS ; Physics ; PNICTIDES ; RADIATION EFFECTS ; SCHOTTKY BARRIER DIODES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR DIODES ; Surface conductivity and carrier phenomena ; SURFACE FINISHING</subject><ispartof>Applied physics letters, 1989-10, Vol.55 (16), p.1633-1635</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-b5a8114bf9f7e920e98d0ec7ef70127912a5d030a49f34be9d98878c03e196fa3</citedby><cites>FETCH-LOGICAL-c347t-b5a8114bf9f7e920e98d0ec7ef70127912a5d030a49f34be9d98878c03e196fa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6741669$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5489990$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>PEARTON, S. J</creatorcontrib><creatorcontrib>CHAKRABARTI, U. K</creatorcontrib><creatorcontrib>BAIOCCHI, F. A</creatorcontrib><title>Electrical and structural changes in the near surface of reactively ion etched InP</title><title>Applied physics letters</title><description>Near-surface (∼1000 Å) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 Å after C2H6/H2 RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.</description><subject>360605 - Materials- Radiation Effects</subject><subject>ANNEALING</subject><subject>BEAMS</subject><subject>CARRIER DENSITY</subject><subject>CHARGE CARRIERS</subject><subject>COLLISIONS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>ELECTRIC DISCHARGES</subject><subject>ELECTRONIC STRUCTURE</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>HEAT TREATMENTS</subject><subject>HIGH TEMPERATURE</subject><subject>IMPURITIES</subject><subject>INDIUM COMPOUNDS</subject><subject>INDIUM PHOSPHIDES</subject><subject>ION BEAMS</subject><subject>ION COLLISIONS</subject><subject>MATERIALS SCIENCE</subject><subject>PHOSPHIDES</subject><subject>PHOSPHORUS COMPOUNDS</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RADIATION EFFECTS</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR DIODES</subject><subject>Surface conductivity and carrier phenomena</subject><subject>SURFACE FINISHING</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKxDAURYMoOI6CnxDEhZtqXtM2zVKGUQcGFNF1yby-2EhNhyQV5u-tVFxdLhwu3MPYJYhbEJW8gynyPIcjtgChVCYB6mO2EELIrNIlnLKzGD-nWuZSLtjruidMwaHpufEtjymMmMYwVeyM_6DIneepI-7JBB7HYA0SHywPZDC5b-oP3A2eU8KOWr7xL-fsxJo-0sVfLtn7w_pt9ZRtnx83q_tthrJQKduVpgYodlZbRToXpOtWECqySkCuNOSmbIUUptBWFjvSra5rVaOQBLqyRi7Z1bw7xOSaiC4Rdjh4Px1qyqLWWosJupkhDEOMgWyzD-7LhEMDovkV1kAzC5vQ6xndmzjpsMF4dPGfr1QBVaXlD0iIaNM</recordid><startdate>19891016</startdate><enddate>19891016</enddate><creator>PEARTON, S. J</creator><creator>CHAKRABARTI, U. K</creator><creator>BAIOCCHI, F. A</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19891016</creationdate><title>Electrical and structural changes in the near surface of reactively ion etched InP</title><author>PEARTON, S. J ; CHAKRABARTI, U. K ; BAIOCCHI, F. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-b5a8114bf9f7e920e98d0ec7ef70127912a5d030a49f34be9d98878c03e196fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>ANNEALING</topic><topic>BEAMS</topic><topic>CARRIER DENSITY</topic><topic>CHARGE CARRIERS</topic><topic>COLLISIONS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>ELECTRIC DISCHARGES</topic><topic>ELECTRONIC STRUCTURE</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>ETCHING</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>HEAT TREATMENTS</topic><topic>HIGH TEMPERATURE</topic><topic>IMPURITIES</topic><topic>INDIUM COMPOUNDS</topic><topic>INDIUM PHOSPHIDES</topic><topic>ION BEAMS</topic><topic>ION COLLISIONS</topic><topic>MATERIALS SCIENCE</topic><topic>PHOSPHIDES</topic><topic>PHOSPHORUS COMPOUNDS</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RADIATION EFFECTS</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR DIODES</topic><topic>Surface conductivity and carrier phenomena</topic><topic>SURFACE FINISHING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PEARTON, S. J</creatorcontrib><creatorcontrib>CHAKRABARTI, U. K</creatorcontrib><creatorcontrib>BAIOCCHI, F. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PEARTON, S. J</au><au>CHAKRABARTI, U. K</au><au>BAIOCCHI, F. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and structural changes in the near surface of reactively ion etched InP</atitle><jtitle>Applied physics letters</jtitle><date>1989-10-16</date><risdate>1989</risdate><volume>55</volume><issue>16</issue><spage>1633</spage><epage>1635</epage><pages>1633-1635</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Near-surface (∼1000 Å) modification in the net carrier concentration in n-type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl-based (CCl2F2/O2) or organic-based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 Å after C2H6/H2 RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102221</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1989-10, Vol.55 (16), p.1633-1635 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5489990 |
| source | AIP Digital Archive |
| subjects | 360605 - Materials- Radiation Effects ANNEALING BEAMS CARRIER DENSITY CHARGE CARRIERS COLLISIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties ELECTRIC DISCHARGES ELECTRONIC STRUCTURE Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ETCHING Exact sciences and technology FABRICATION HEAT TREATMENTS HIGH TEMPERATURE IMPURITIES INDIUM COMPOUNDS INDIUM PHOSPHIDES ION BEAMS ION COLLISIONS MATERIALS SCIENCE PHOSPHIDES PHOSPHORUS COMPOUNDS PHYSICAL RADIATION EFFECTS Physics PNICTIDES RADIATION EFFECTS SCHOTTKY BARRIER DIODES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Surface conductivity and carrier phenomena SURFACE FINISHING |
| title | Electrical and structural changes in the near surface of reactively ion etched InP |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T09%3A14%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20and%20structural%20changes%20in%20the%20near%20surface%20of%20reactively%20ion%20etched%20InP&rft.jtitle=Applied%20physics%20letters&rft.au=PEARTON,%20S.%20J&rft.date=1989-10-16&rft.volume=55&rft.issue=16&rft.spage=1633&rft.epage=1635&rft.pages=1633-1635&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.102221&rft_dat=%3Cpascalfrancis_osti_%3E6741669%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |