Far-infrared photoresponse of the InAs/GaInSb superlattice
We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We r...
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| Veröffentlicht in: | Applied physics letters 1991-08, Vol.59 (7), p.846-848 |
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| container_end_page | 848 |
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| container_issue | 7 |
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| container_title | Applied physics letters |
| container_volume | 59 |
| creator | CAMPBELL, I. H SELA, I LAURICH, B. K SMITH, D. L BOLOGNESI, C. R SAMOSKA, L. A GOSSARD, A. C KROEMER, H |
| description | We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site. |
| doi_str_mv | 10.1063/1.105255 |
| format | Article |
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H</creatorcontrib><creatorcontrib>SELA, I</creatorcontrib><creatorcontrib>LAURICH, B. K</creatorcontrib><creatorcontrib>SMITH, D. L</creatorcontrib><creatorcontrib>BOLOGNESI, C. R</creatorcontrib><creatorcontrib>SAMOSKA, L. A</creatorcontrib><creatorcontrib>GOSSARD, A. C</creatorcontrib><creatorcontrib>KROEMER, H</creatorcontrib><title>Far-infrared photoresponse of the InAs/GaInSb superlattice</title><title>Applied physics letters</title><description>We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.</description><subject>360603 - Materials- Properties</subject><subject>ANTIMONIDES</subject><subject>ANTIMONY COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>EXCITONS</subject><subject>GALLIUM ANTIMONIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INDIUM ANTIMONIDES</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INFRARED SPECTRA</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOCONDUCTIVITY</subject><subject>PHOTODETECTORS</subject><subject>PHYSICAL PROPERTIES</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>QUASI PARTICLES</subject><subject>RECOMBINATION</subject><subject>SPECTRA</subject><subject>SUPERLATTICES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo90MFKxDAQBuAgCq6r4CMU8eClbtJpktbbsuyuCwse1HNIpglbqUlJ4sG3t1Lx9DPwMcz8hNwy-siogBWbglecn5EFo1KWwFhzThaUUihFy9kluUrpYxp5BbAgTzsdy967qKPtivEUcog2jcEnWwRX5JMtDn6dVnt98K-mSF-jjYPOuUd7TS6cHpK9-csled9t3zbP5fFlf9isjyVCLXPpOGcdBW0BhHRoWmykxemS1pjKmM7JijdGclGjQVM12HEKQCUVonMtB1iSu3lvSLlXCfts8YTBe4tZ8Vq0ksoJPcwIY0gpWqfG2H_q-K0YVb_FKKbmYiZ6P9NRJ9TD9LrHPv17TmVbixp-AH_DYG8</recordid><startdate>19910812</startdate><enddate>19910812</enddate><creator>CAMPBELL, I. H</creator><creator>SELA, I</creator><creator>LAURICH, B. K</creator><creator>SMITH, D. L</creator><creator>BOLOGNESI, C. R</creator><creator>SAMOSKA, L. A</creator><creator>GOSSARD, A. C</creator><creator>KROEMER, H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19910812</creationdate><title>Far-infrared photoresponse of the InAs/GaInSb superlattice</title><author>CAMPBELL, I. H ; SELA, I ; LAURICH, B. K ; SMITH, D. L ; BOLOGNESI, C. R ; SAMOSKA, L. A ; GOSSARD, A. C ; KROEMER, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-f551d03ae3367fcb9c87ec9519bb2bbdf7258b7564cbcb28cd503307066df9533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>360603 - Materials- Properties</topic><topic>ANTIMONIDES</topic><topic>ANTIMONY COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>EXCITONS</topic><topic>GALLIUM ANTIMONIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INDIUM ANTIMONIDES</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INFRARED SPECTRA</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTOCONDUCTIVITY</topic><topic>PHOTODETECTORS</topic><topic>PHYSICAL PROPERTIES</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>QUASI PARTICLES</topic><topic>RECOMBINATION</topic><topic>SPECTRA</topic><topic>SUPERLATTICES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CAMPBELL, I. H</creatorcontrib><creatorcontrib>SELA, I</creatorcontrib><creatorcontrib>LAURICH, B. K</creatorcontrib><creatorcontrib>SMITH, D. L</creatorcontrib><creatorcontrib>BOLOGNESI, C. R</creatorcontrib><creatorcontrib>SAMOSKA, L. A</creatorcontrib><creatorcontrib>GOSSARD, A. C</creatorcontrib><creatorcontrib>KROEMER, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CAMPBELL, I. H</au><au>SELA, I</au><au>LAURICH, B. K</au><au>SMITH, D. L</au><au>BOLOGNESI, C. R</au><au>SAMOSKA, L. A</au><au>GOSSARD, A. C</au><au>KROEMER, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Far-infrared photoresponse of the InAs/GaInSb superlattice</atitle><jtitle>Applied physics letters</jtitle><date>1991-08-12</date><risdate>1991</risdate><volume>59</volume><issue>7</issue><spage>846</spage><epage>848</epage><pages>846-848</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.105255</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991-08, Vol.59 (7), p.846-848 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5469707 |
| source | AIP Digital Archive |
| subjects | 360603 - Materials- Properties ANTIMONIDES ANTIMONY COMPOUNDS ARSENIC COMPOUNDS ARSENIDES Condensed matter: electronic structure, electrical, magnetic, and optical properties ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology EXCITONS GALLIUM ANTIMONIDES GALLIUM COMPOUNDS INDIUM ANTIMONIDES INDIUM ARSENIDES INDIUM COMPOUNDS INFRARED SPECTRA MATERIALS SCIENCE PHOTOCONDUCTIVITY PHOTODETECTORS PHYSICAL PROPERTIES Physics PNICTIDES QUASI PARTICLES RECOMBINATION SPECTRA SUPERLATTICES |
| title | Far-infrared photoresponse of the InAs/GaInSb superlattice |
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