Measurement of the occupation lengths of channeled 17-MeV electrons and 54-MeV electrons and positrons in silicon by means of channeling radiation

The occupation length of channeled 17-MeV electrons and 54-MeV electrons and positrons in silicon has been determined by measuring the intensity of the emitted channeling radiation. For 17-MeV electrons the measured 1/{ital e} occupation lengths are approximately 16 {mu}m for the (100) plane and 20...

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