The ion sensitivity of boron implanted silicon nitride chemical sensors
Silicon nitride has been widely used as a pH sensing insulator on the gate of the ion sensitive field effect transistor (ISFET) employed in CMOS integrated chemical sensors. Experimental results on the H+ sensitivity of heavily boron-implanted silicon nitride are reported. Ion implantation provides...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1989-10, Vol.136 (10), p.2968-2972 |
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| container_end_page | 2972 |
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| container_issue | 10 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 136 |
| creator | HON-SUM WONG YIN HU WHITE, M. H |
| description | Silicon nitride has been widely used as a pH sensing insulator on the gate of the ion sensitive field effect transistor (ISFET) employed in CMOS integrated chemical sensors. Experimental results on the H+ sensitivity of heavily boron-implanted silicon nitride are reported. Ion implantation provides a microelectronics technology compatible approach to modify the surface of insulators and tailor the ion sensitivity of ISFETs. This work has suggested new possibilities to study the multiple-site site-binding model for blocking insulators. The composition of the surface sites (nature and number of sites), can be conveniently controlled by implant ion species and dose. 33 refs. |
| doi_str_mv | 10.1149/1.2096384 |
| format | Article |
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H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The ion sensitivity of boron implanted silicon nitride chemical sensors</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1989-10-01</date><risdate>1989</risdate><volume>136</volume><issue>10</issue><spage>2968</spage><epage>2972</epage><pages>2968-2972</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>Silicon nitride has been widely used as a pH sensing insulator on the gate of the ion sensitive field effect transistor (ISFET) employed in CMOS integrated chemical sensors. Experimental results on the H+ sensitivity of heavily boron-implanted silicon nitride are reported. Ion implantation provides a microelectronics technology compatible approach to modify the surface of insulators and tailor the ion sensitivity of ISFETs. This work has suggested new possibilities to study the multiple-site site-binding model for blocking insulators. The composition of the surface sites (nature and number of sites), can be conveniently controlled by implant ion species and dose. 33 refs.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2096384</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1989-10, Vol.136 (10), p.2968-2972 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5049948 |
| source | IOP Publishing Journals |
| subjects | 360602 - Other Materials- Structure & Phase Studies 360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Analytical chemistry BORON CHARGED PARTICLES CHEMICAL COMPOSITION Chemistry ELECTRICAL INSULATION ELECTRICAL PROPERTIES ELECTRONIC CIRCUITS ELEMENTS ENGINEERING Exact sciences and technology FIELD EFFECT TRANSISTORS General, instrumentation HYDROGEN IONS INTEGRATED CIRCUITS ION IMPLANTATION IONS MATERIALS SCIENCE MICROELECTRONIC CIRCUITS MICROELECTRONICS NITRIDES NITROGEN COMPOUNDS PH VALUE PHYSICAL PROPERTIES PNICTIDES SEMICONDUCTOR DEVICES SEMIMETALS SENSITIVITY SILICON COMPOUNDS SILICON NITRIDES TECHNOLOGY ASSESSMENT TRANSISTORS |
| title | The ion sensitivity of boron implanted silicon nitride chemical sensors |
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