Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si[sub Ga]) in GaAs that reveal delocalized and localized electronic features corresponding to Si[sub Ga] in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in...

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Veröffentlicht in:	Physical review letters 1994-03, Vol.72 (10), p.1490-1493
Hauptverfasser:	Zheng, JF, Liu, X, Newman, N, Weber, ER, Ogletree, DF, Salmeron, M
Format:	Artikel
Sprache:	eng
Schlagworte:	360606 - Other Materials- Physical Properties- (1992-) ALLOYS ARSENIC COMPOUNDS ARSENIDES CRYSTAL DOPING ELECTRON MICROSCOPY ELECTRONIC STRUCTURE GALLIUM ARSENIDES GALLIUM COMPOUNDS MATERIALS SCIENCE MICROSCOPY MICROSTRUCTURE PNICTIDES SILICON ADDITIONS SILICON ALLOYS SUBSURFACE STRUCTURES SURFACE PROPERTIES TUNNELING
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