(110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron
The secondary recrystallization texture has been related to the structure developed during prior processing. The (110) [001] component of the primary recrystallization texture, from which secondary grains grow, develops from the (111) 〈112〉 doublet component in the prior recrystallization texture. I...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1958-03, Vol.29 (3), p.361-362 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 362 |
|---|---|
| container_issue | 3 |
| container_start_page | 361 |
| container_title | Journal of applied physics |
| container_volume | 29 |
| creator | Fiedler, H. C. |
| description | The secondary recrystallization texture has been related to the structure developed during prior processing. The (110) [001] component of the primary recrystallization texture, from which secondary grains grow, develops from the (111) 〈112〉 doublet component in the prior recrystallization texture. If the material undergoes two rather than one prior recrystallization heat treatments (each separated by a cold reduction), the amount of the (110) [001] component in the primary recrystallization texture is in general increased, and as a consequence, the completeness of secondary recrystallization is promoted. |
| doi_str_mv | 10.1063/1.1723134 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_4344919</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1723134</sourcerecordid><originalsourceid>FETCH-LOGICAL-c237t-1af8bdf2452821a69b33cd79dd6820a77aed829e7a1c6bd00de00bd3aff9629d3</originalsourceid><addsrcrecordid>eNotkEFLAzEQhYMoWKsH_8HiyR62ziTbzeYoxWqhoth6EgnZZJZG1l1JIlh_vSvt6Q2PN8O8j7FLhClCKW5wipILFMURGyFUKpezGRyzEQDHvFJSnbKzGD8AECuhRuzxGhEm2dtgvGdrsn3nTNhlL2TDLibTtv7XJN932YZ-0negzA_jNhBlzxQsdSlb-9YPa_ky9N05O2lMG-nioGP2urjbzB_y1dP9cn67yi0XMuVomqp2DS9mvOJoSlULYZ1UzpUVByOlIVdxRdKgLWsH4AigdsI0jSq5cmLMrvZ3-5i8jtYnstvhiY5s0oUoCoVqCE32IRv6GAM1-iv4z6GdRtD_sDTqAyzxB8lLWnc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>(110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron</title><source>AIP_美国物理联合会期刊回溯（NSTL购买）</source><creator>Fiedler, H. C.</creator><creatorcontrib>Fiedler, H. C. ; General Electric Co., Schenectady, N.Y</creatorcontrib><description>The secondary recrystallization texture has been related to the structure developed during prior processing. The (110) [001] component of the primary recrystallization texture, from which secondary grains grow, develops from the (111) 〈112〉 doublet component in the prior recrystallization texture. If the material undergoes two rather than one prior recrystallization heat treatments (each separated by a cold reduction), the amount of the (110) [001] component in the primary recrystallization texture is in general increased, and as a consequence, the completeness of secondary recrystallization is promoted.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1723134</identifier><language>eng</language><publisher>American Institute of Physics (AIP)</publisher><subject>COLD WORKING ; EXPANSION ; GRAIN SIZE ; HEAT TREATMENTS ; IRON ALLOYS ; LATTICES ; MINERALOGY, METALLURGY, AND CERAMICS ; QUANTITY RATIO ; RECRYSTALLIZATION ; SILICIDES</subject><ispartof>Journal of applied physics, 1958-03, Vol.29 (3), p.361-362</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-1af8bdf2452821a69b33cd79dd6820a77aed829e7a1c6bd00de00bd3aff9629d3</citedby><cites>FETCH-LOGICAL-c237t-1af8bdf2452821a69b33cd79dd6820a77aed829e7a1c6bd00de00bd3aff9629d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/4344919$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Fiedler, H. C.</creatorcontrib><creatorcontrib>General Electric Co., Schenectady, N.Y</creatorcontrib><title>(110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron</title><title>Journal of applied physics</title><description>The secondary recrystallization texture has been related to the structure developed during prior processing. The (110) [001] component of the primary recrystallization texture, from which secondary grains grow, develops from the (111) 〈112〉 doublet component in the prior recrystallization texture. If the material undergoes two rather than one prior recrystallization heat treatments (each separated by a cold reduction), the amount of the (110) [001] component in the primary recrystallization texture is in general increased, and as a consequence, the completeness of secondary recrystallization is promoted.</description><subject>COLD WORKING</subject><subject>EXPANSION</subject><subject>GRAIN SIZE</subject><subject>HEAT TREATMENTS</subject><subject>IRON ALLOYS</subject><subject>LATTICES</subject><subject>MINERALOGY, METALLURGY, AND CERAMICS</subject><subject>QUANTITY RATIO</subject><subject>RECRYSTALLIZATION</subject><subject>SILICIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1958</creationdate><recordtype>article</recordtype><recordid>eNotkEFLAzEQhYMoWKsH_8HiyR62ziTbzeYoxWqhoth6EgnZZJZG1l1JIlh_vSvt6Q2PN8O8j7FLhClCKW5wipILFMURGyFUKpezGRyzEQDHvFJSnbKzGD8AECuhRuzxGhEm2dtgvGdrsn3nTNhlL2TDLibTtv7XJN932YZ-0negzA_jNhBlzxQsdSlb-9YPa_ky9N05O2lMG-nioGP2urjbzB_y1dP9cn67yi0XMuVomqp2DS9mvOJoSlULYZ1UzpUVByOlIVdxRdKgLWsH4AigdsI0jSq5cmLMrvZ3-5i8jtYnstvhiY5s0oUoCoVqCE32IRv6GAM1-iv4z6GdRtD_sDTqAyzxB8lLWnc</recordid><startdate>19580301</startdate><enddate>19580301</enddate><creator>Fiedler, H. C.</creator><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19580301</creationdate><title>(110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron</title><author>Fiedler, H. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c237t-1af8bdf2452821a69b33cd79dd6820a77aed829e7a1c6bd00de00bd3aff9629d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1958</creationdate><topic>COLD WORKING</topic><topic>EXPANSION</topic><topic>GRAIN SIZE</topic><topic>HEAT TREATMENTS</topic><topic>IRON ALLOYS</topic><topic>LATTICES</topic><topic>MINERALOGY, METALLURGY, AND CERAMICS</topic><topic>QUANTITY RATIO</topic><topic>RECRYSTALLIZATION</topic><topic>SILICIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fiedler, H. C.</creatorcontrib><creatorcontrib>General Electric Co., Schenectady, N.Y</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fiedler, H. C.</au><aucorp>General Electric Co., Schenectady, N.Y</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>(110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron</atitle><jtitle>Journal of applied physics</jtitle><date>1958-03-01</date><risdate>1958</risdate><volume>29</volume><issue>3</issue><spage>361</spage><epage>362</epage><pages>361-362</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The secondary recrystallization texture has been related to the structure developed during prior processing. The (110) [001] component of the primary recrystallization texture, from which secondary grains grow, develops from the (111) 〈112〉 doublet component in the prior recrystallization texture. If the material undergoes two rather than one prior recrystallization heat treatments (each separated by a cold reduction), the amount of the (110) [001] component in the primary recrystallization texture is in general increased, and as a consequence, the completeness of secondary recrystallization is promoted.</abstract><pub>American Institute of Physics (AIP)</pub><doi>10.1063/1.1723134</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1958-03, Vol.29 (3), p.361-362 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_4344919 |
| source | AIP_美国物理联合会期刊回溯（NSTL购买） |
| subjects | COLD WORKING EXPANSION GRAIN SIZE HEAT TREATMENTS IRON ALLOYS LATTICES MINERALOGY, METALLURGY, AND CERAMICS QUANTITY RATIO RECRYSTALLIZATION SILICIDES |
| title | (110) [001] Secondary Recrystallization Texture in Three Percent Silicon-Iron |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T17%3A05%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=(110)%20%5B001%5D%20Secondary%20Recrystallization%20Texture%20in%20Three%20Percent%20Silicon-Iron&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Fiedler,%20H.%20C.&rft.aucorp=General%20Electric%20Co.,%20Schenectady,%20N.Y&rft.date=1958-03-01&rft.volume=29&rft.issue=3&rft.spage=361&rft.epage=362&rft.pages=361-362&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1723134&rft_dat=%3Ccrossref_osti_%3E10_1063_1_1723134%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |