Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films
The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM). The contrast and patterns in the near-field photocurrent images depend on the polarization direction of the NSOM light. These results rule out compositio...
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| Veröffentlicht in: | Physical review letters 2001-04, Vol.86 (16), p.3598-3601 |
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| container_title | Physical review letters |
| container_volume | 86 |
| creator | Gray, M H Hsu, J W Giovane, L Bulsara, M T |
| description | The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM). The contrast and patterns in the near-field photocurrent images depend on the polarization direction of the NSOM light. These results rule out composition nonuniformity, junction depth variation, and scanning artifacts as dominant sources of the contrast. Numerical calculations show that local changes in band structure due to strain fields of the misfit dislocations are responsible for the experimental observations. |
| doi_str_mv | 10.1103/PhysRevLett.86.3598 |
| format | Article |
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The contrast and patterns in the near-field photocurrent images depend on the polarization direction of the NSOM light. These results rule out composition nonuniformity, junction depth variation, and scanning artifacts as dominant sources of the contrast. Numerical calculations show that local changes in band structure due to strain fields of the misfit dislocations are responsible for the experimental observations.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.86.3598</identifier><identifier>PMID: 11328032</identifier><language>eng</language><publisher>United States: The American Physical Society</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DISLOCATIONS ; OPTICAL MICROSCOPES ; ORIGIN ; PHOTOCURRENTS ; POLARIZATION ; STRAINS</subject><ispartof>Physical review letters, 2001-04, Vol.86 (16), p.3598-3601</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-cf9bec719edbfef6fa1257635480f141497c8684c44742ba9ea71db1586056f3</citedby><cites>FETCH-LOGICAL-c331t-cf9bec719edbfef6fa1257635480f141497c8684c44742ba9ea71db1586056f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,2862,2863,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/11328032$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/40205755$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Gray, M H</creatorcontrib><creatorcontrib>Hsu, J W</creatorcontrib><creatorcontrib>Giovane, L</creatorcontrib><creatorcontrib>Bulsara, M T</creatorcontrib><title>Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM). The contrast and patterns in the near-field photocurrent images depend on the polarization direction of the NSOM light. These results rule out composition nonuniformity, junction depth variation, and scanning artifacts as dominant sources of the contrast. Numerical calculations show that local changes in band structure due to strain fields of the misfit dislocations are responsible for the experimental observations.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DISLOCATIONS</subject><subject>OPTICAL MICROSCOPES</subject><subject>ORIGIN</subject><subject>PHOTOCURRENTS</subject><subject>POLARIZATION</subject><subject>STRAINS</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNpNkFFrFDEUhYModq3-AkECgm-z3jtJJplHKbUKC0rbh76FTPaGicxO1iRb3H_fqbugT_flO4dzP8beI6wRQXz-OR7LLT1uqNa16dZC9eYFWyHovtGI8iVbAQhsegB9wd6U8gsAsO3Ma3aBKFoDol2xh-sQyFeeAndzLKnmtI-el5pdnHmaeR2J-5xKGV31I6dpoXP0buLO1_gY65EvYKbJ_aEtv6G7yEOcduUtexXcVOjd-V6y-6_X91ffms2Pm-9XXzaNFwJr40M_kNfY03YIFLrgsFW6E0oaCChR9tqbzkgvpZbt4HpyGrcDKtOB6oK4ZB9PtanUaIuPlfzo0zwvM62EFpRWaqE-nah9Tr8PVKrdxeJpmtxM6VCsBoO9AlxAcQL_vpwp2H2OO5ePFsE-W7f_Wbems8_Wl9SHc_1h2NH2X-asWTwBGnGA3g</recordid><startdate>20010416</startdate><enddate>20010416</enddate><creator>Gray, M H</creator><creator>Hsu, J W</creator><creator>Giovane, L</creator><creator>Bulsara, M T</creator><general>The American Physical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OTOTI</scope></search><sort><creationdate>20010416</creationdate><title>Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films</title><author>Gray, M H ; Hsu, J W ; Giovane, L ; Bulsara, M T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-cf9bec719edbfef6fa1257635480f141497c8684c44742ba9ea71db1586056f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DISLOCATIONS</topic><topic>OPTICAL MICROSCOPES</topic><topic>ORIGIN</topic><topic>PHOTOCURRENTS</topic><topic>POLARIZATION</topic><topic>STRAINS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gray, M H</creatorcontrib><creatorcontrib>Hsu, J W</creatorcontrib><creatorcontrib>Giovane, L</creatorcontrib><creatorcontrib>Bulsara, M T</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gray, M H</au><au>Hsu, J W</au><au>Giovane, L</au><au>Bulsara, M T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2001-04-16</date><risdate>2001</risdate><volume>86</volume><issue>16</issue><spage>3598</spage><epage>3601</epage><pages>3598-3601</pages><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM). 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| ispartof | Physical review letters, 2001-04, Vol.86 (16), p.3598-3601 |
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| language | eng |
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| source | APS: American Physical Society E-Journals (Physics) |
| subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DISLOCATIONS OPTICAL MICROSCOPES ORIGIN PHOTOCURRENTS POLARIZATION STRAINS |
| title | Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films |
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