Equilibrium state of hydrogen in gallium nitride: Theory and experiment

Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2000-10, Vol.88 (8), p.4676-4687
Hauptverfasser: Myers, S. M., Wright, A. F., Petersen, G. A., Seager, C. H., Wampler, W. R., Crawford, M. H., Han, J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4687
container_issue 8
container_start_page 4676
container_title Journal of applied physics
container_volume 88
creator Myers, S. M.
Wright, A. F.
Petersen, G. A.
Seager, C. H.
Wampler, W. R.
Crawford, M. H.
Han, J.
description Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured in p-type, Mg-doped GaN at 600, 700, and 800 °C as a function of D2 pressure and compared with theory. Agreement was obtained by reducing the H formation energies 0.22 eV from ab initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. More limited solubility measurements were carried out for nominally undoped material rendered n-type by donors provisionally identified as O impurities, and results agree well with theory after the aforementioned adjustment of formation energies. It is concluded that currently recognized H states and physical processes can account for the equilibrium, elevated-temperature behavior of H examined in this work.
doi_str_mv 10.1063/1.1309123
format Article
fullrecord <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_40204951</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1309123</sourcerecordid><originalsourceid>FETCH-LOGICAL-c356t-c70b0e6bcd3bafc3269eca6ae66ab79e75e4f9634732bb3e36db4b37c7b142f3</originalsourceid><addsrcrecordid>eNotkMFKAzEURYMoWKsL_yDgysXUl3kzSeNOSluFgpvuQ5J500amMzVJwf69Le3qLu7hcjmMPQuYCJD4JiYCQYsSb9hIwFQXqq7hlo0ASlFMtdL37CGlHwAhpqhHbDn_PYQuuBgOO56yzcSHlm-PTRw21PPQ843tunPZhxxDQ-98vaUhHrntG05_e4phR31-ZHet7RI9XXPM1ov5evZZrL6XX7OPVeGxlrnwChyQdL5BZ1uPpdTkrbQkpXVKk6qparXESmHpHBLKxlUOlVdOVGWLY_ZymR1SDib5kMlv_dD35LOpoIRK1-JEvV4oH4eUIrVmf3pp49EIMGdNRpirJvwHYXhaTA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Equilibrium state of hydrogen in gallium nitride: Theory and experiment</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Myers, S. M. ; Wright, A. F. ; Petersen, G. A. ; Seager, C. H. ; Wampler, W. R. ; Crawford, M. H. ; Han, J.</creator><creatorcontrib>Myers, S. M. ; Wright, A. F. ; Petersen, G. A. ; Seager, C. H. ; Wampler, W. R. ; Crawford, M. H. ; Han, J.</creatorcontrib><description>Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured in p-type, Mg-doped GaN at 600, 700, and 800 °C as a function of D2 pressure and compared with theory. Agreement was obtained by reducing the H formation energies 0.22 eV from ab initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. More limited solubility measurements were carried out for nominally undoped material rendered n-type by donors provisionally identified as O impurities, and results agree well with theory after the aforementioned adjustment of formation energies. It is concluded that currently recognized H states and physical processes can account for the equilibrium, elevated-temperature behavior of H examined in this work.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1309123</identifier><language>eng</language><publisher>United States: The American Physical Society</publisher><subject>08 HYDROGEN ; ABSORPTION ; DEUTERIUM ; GALLIUM NITRIDES ; HYDROGEN ; IMPURITIES ; PHYSICS ; SOLUBILITY</subject><ispartof>Journal of applied physics, 2000-10, Vol.88 (8), p.4676-4687</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-c70b0e6bcd3bafc3269eca6ae66ab79e75e4f9634732bb3e36db4b37c7b142f3</citedby><cites>FETCH-LOGICAL-c356t-c70b0e6bcd3bafc3269eca6ae66ab79e75e4f9634732bb3e36db4b37c7b142f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/40204951$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Myers, S. M.</creatorcontrib><creatorcontrib>Wright, A. F.</creatorcontrib><creatorcontrib>Petersen, G. A.</creatorcontrib><creatorcontrib>Seager, C. H.</creatorcontrib><creatorcontrib>Wampler, W. R.</creatorcontrib><creatorcontrib>Crawford, M. H.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><title>Equilibrium state of hydrogen in gallium nitride: Theory and experiment</title><title>Journal of applied physics</title><description>Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured in p-type, Mg-doped GaN at 600, 700, and 800 °C as a function of D2 pressure and compared with theory. Agreement was obtained by reducing the H formation energies 0.22 eV from ab initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. More limited solubility measurements were carried out for nominally undoped material rendered n-type by donors provisionally identified as O impurities, and results agree well with theory after the aforementioned adjustment of formation energies. It is concluded that currently recognized H states and physical processes can account for the equilibrium, elevated-temperature behavior of H examined in this work.</description><subject>08 HYDROGEN</subject><subject>ABSORPTION</subject><subject>DEUTERIUM</subject><subject>GALLIUM NITRIDES</subject><subject>HYDROGEN</subject><subject>IMPURITIES</subject><subject>PHYSICS</subject><subject>SOLUBILITY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkMFKAzEURYMoWKsL_yDgysXUl3kzSeNOSluFgpvuQ5J500amMzVJwf69Le3qLu7hcjmMPQuYCJD4JiYCQYsSb9hIwFQXqq7hlo0ASlFMtdL37CGlHwAhpqhHbDn_PYQuuBgOO56yzcSHlm-PTRw21PPQ843tunPZhxxDQ-98vaUhHrntG05_e4phR31-ZHet7RI9XXPM1ov5evZZrL6XX7OPVeGxlrnwChyQdL5BZ1uPpdTkrbQkpXVKk6qparXESmHpHBLKxlUOlVdOVGWLY_ZymR1SDib5kMlv_dD35LOpoIRK1-JEvV4oH4eUIrVmf3pp49EIMGdNRpirJvwHYXhaTA</recordid><startdate>20001015</startdate><enddate>20001015</enddate><creator>Myers, S. M.</creator><creator>Wright, A. F.</creator><creator>Petersen, G. A.</creator><creator>Seager, C. H.</creator><creator>Wampler, W. R.</creator><creator>Crawford, M. H.</creator><creator>Han, J.</creator><general>The American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20001015</creationdate><title>Equilibrium state of hydrogen in gallium nitride: Theory and experiment</title><author>Myers, S. M. ; Wright, A. F. ; Petersen, G. A. ; Seager, C. H. ; Wampler, W. R. ; Crawford, M. H. ; Han, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-c70b0e6bcd3bafc3269eca6ae66ab79e75e4f9634732bb3e36db4b37c7b142f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>08 HYDROGEN</topic><topic>ABSORPTION</topic><topic>DEUTERIUM</topic><topic>GALLIUM NITRIDES</topic><topic>HYDROGEN</topic><topic>IMPURITIES</topic><topic>PHYSICS</topic><topic>SOLUBILITY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Myers, S. M.</creatorcontrib><creatorcontrib>Wright, A. F.</creatorcontrib><creatorcontrib>Petersen, G. A.</creatorcontrib><creatorcontrib>Seager, C. H.</creatorcontrib><creatorcontrib>Wampler, W. R.</creatorcontrib><creatorcontrib>Crawford, M. H.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Myers, S. M.</au><au>Wright, A. F.</au><au>Petersen, G. A.</au><au>Seager, C. H.</au><au>Wampler, W. R.</au><au>Crawford, M. H.</au><au>Han, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Equilibrium state of hydrogen in gallium nitride: Theory and experiment</atitle><jtitle>Journal of applied physics</jtitle><date>2000-10-15</date><risdate>2000</risdate><volume>88</volume><issue>8</issue><spage>4676</spage><epage>4687</epage><pages>4676-4687</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured in p-type, Mg-doped GaN at 600, 700, and 800 °C as a function of D2 pressure and compared with theory. Agreement was obtained by reducing the H formation energies 0.22 eV from ab initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. More limited solubility measurements were carried out for nominally undoped material rendered n-type by donors provisionally identified as O impurities, and results agree well with theory after the aforementioned adjustment of formation energies. It is concluded that currently recognized H states and physical processes can account for the equilibrium, elevated-temperature behavior of H examined in this work.</abstract><cop>United States</cop><pub>The American Physical Society</pub><doi>10.1063/1.1309123</doi><tpages>12</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2000-10, Vol.88 (8), p.4676-4687
issn 0021-8979
1089-7550
language eng
recordid cdi_osti_scitechconnect_40204951
source AIP Journals Complete; AIP Digital Archive
subjects 08 HYDROGEN
ABSORPTION
DEUTERIUM
GALLIUM NITRIDES
HYDROGEN
IMPURITIES
PHYSICS
SOLUBILITY
title Equilibrium state of hydrogen in gallium nitride: Theory and experiment
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T12%3A00%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Equilibrium%20state%20of%20hydrogen%20in%20gallium%20nitride:%20Theory%20and%20experiment&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Myers,%20S.%20M.&rft.date=2000-10-15&rft.volume=88&rft.issue=8&rft.spage=4676&rft.epage=4687&rft.pages=4676-4687&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1309123&rft_dat=%3Ccrossref_osti_%3E10_1063_1_1309123%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true