Hexagonal voids and the formation of micropipes during SiC sublimation growth

Hexagonal voids observed in sublimation grown SiC boules were examined using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy, KOH etching, and synchrotron white-beam x-ray topography. Voids formed at imperfections in the attachment layer between the seed and crucible...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2001-04, Vol.89 (8), p.4625-4630
Hauptverfasser:	Kuhr, Thomas A., Sanchez, Edward K., Skowronski, Marek, Vetter, William M., Dudley, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	ATOMIC FORCE MICROSCOPY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CRYSTAL GROWTH DEFECTS DISLOCATIONS OPTICAL MICROSCOPY SCANNING ELECTRON MICROSCOPY SCREW DISLOCATIONS SUBLIMATION
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!