Infrared reflectance of GaN films grown on Si(001) substrates

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2001-06, Vol.89 (11), p.6165-6170
Hauptverfasser:	Zhang, Xiong, Hou, Yong-Tian, Feng, Zhe-Chuan, Chen, Jin-Li
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS FINE STRUCTURE MICROSTRUCTURE PHYSICS PROBES SCANNING ELECTRON MICROSCOPY SILICON SIMULATION SPECTRA SPECTROSCOPY SUBSTRATES THIN FILMS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!