Infrared reflectance of GaN films grown on Si(001) substrates

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2001-06, Vol.89 (11), p.6165-6170
Hauptverfasser: Zhang, Xiong, Hou, Yong-Tian, Feng, Zhe-Chuan, Chen, Jin-Li
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 6170
container_issue 11
container_start_page 6165
container_title Journal of applied physics
container_volume 89
creator Zhang, Xiong
Hou, Yong-Tian
Feng, Zhe-Chuan
Chen, Jin-Li
description GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.
doi_str_mv 10.1063/1.1368162
format Article
fullrecord <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_40203735</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1368162</sourcerecordid><originalsourceid>FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</originalsourceid><addsrcrecordid>eNotkDFPwzAUhC0EEqUw8A8ssdAh5T27jp2BAVVQKlUwALPlOO9BUJsgOwjx7wlqp1u-O92dEJcIc4RS3-AcdemwVEdiguCqwhoDx2ICoLBwla1OxVnOnwCITlcTcbvuOIVEjUzEW4pD6CLJnuUqPElut7ss31P_08m-ky_t9eibyfxd5yGFgfK5OOGwzXRx0Kl4e7h_XT4Wm-fVenm3KaIyZijYMLgmVMrVNSM7ClYhl5FVaWOsCRrSxrENxpQUAmLgkY5EC8uandZTcbXP7fPQ-hzbgeJH7LtuLOwXoEBbbUZqtqdi6nMe9_iv1O5C-vUI_v8dj_7wjv4DmAtWAg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Infrared reflectance of GaN films grown on Si(001) substrates</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Zhang, Xiong ; Hou, Yong-Tian ; Feng, Zhe-Chuan ; Chen, Jin-Li</creator><creatorcontrib>Zhang, Xiong ; Hou, Yong-Tian ; Feng, Zhe-Chuan ; Chen, Jin-Li</creatorcontrib><description>GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1368162</identifier><language>eng</language><publisher>United States: The American Physical Society</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; FINE STRUCTURE ; MICROSTRUCTURE ; PHYSICS ; PROBES ; SCANNING ELECTRON MICROSCOPY ; SILICON ; SIMULATION ; SPECTRA ; SPECTROSCOPY ; SUBSTRATES ; THIN FILMS</subject><ispartof>Journal of applied physics, 2001-06, Vol.89 (11), p.6165-6170</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</citedby><cites>FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/40203735$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Xiong</creatorcontrib><creatorcontrib>Hou, Yong-Tian</creatorcontrib><creatorcontrib>Feng, Zhe-Chuan</creatorcontrib><creatorcontrib>Chen, Jin-Li</creatorcontrib><title>Infrared reflectance of GaN films grown on Si(001) substrates</title><title>Journal of applied physics</title><description>GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>FINE STRUCTURE</subject><subject>MICROSTRUCTURE</subject><subject>PHYSICS</subject><subject>PROBES</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SILICON</subject><subject>SIMULATION</subject><subject>SPECTRA</subject><subject>SPECTROSCOPY</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAUhC0EEqUw8A8ssdAh5T27jp2BAVVQKlUwALPlOO9BUJsgOwjx7wlqp1u-O92dEJcIc4RS3-AcdemwVEdiguCqwhoDx2ICoLBwla1OxVnOnwCITlcTcbvuOIVEjUzEW4pD6CLJnuUqPElut7ss31P_08m-ky_t9eibyfxd5yGFgfK5OOGwzXRx0Kl4e7h_XT4Wm-fVenm3KaIyZijYMLgmVMrVNSM7ClYhl5FVaWOsCRrSxrENxpQUAmLgkY5EC8uandZTcbXP7fPQ-hzbgeJH7LtuLOwXoEBbbUZqtqdi6nMe9_iv1O5C-vUI_v8dj_7wjv4DmAtWAg</recordid><startdate>20010601</startdate><enddate>20010601</enddate><creator>Zhang, Xiong</creator><creator>Hou, Yong-Tian</creator><creator>Feng, Zhe-Chuan</creator><creator>Chen, Jin-Li</creator><general>The American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20010601</creationdate><title>Infrared reflectance of GaN films grown on Si(001) substrates</title><author>Zhang, Xiong ; Hou, Yong-Tian ; Feng, Zhe-Chuan ; Chen, Jin-Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>FINE STRUCTURE</topic><topic>MICROSTRUCTURE</topic><topic>PHYSICS</topic><topic>PROBES</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SILICON</topic><topic>SIMULATION</topic><topic>SPECTRA</topic><topic>SPECTROSCOPY</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Xiong</creatorcontrib><creatorcontrib>Hou, Yong-Tian</creatorcontrib><creatorcontrib>Feng, Zhe-Chuan</creatorcontrib><creatorcontrib>Chen, Jin-Li</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Xiong</au><au>Hou, Yong-Tian</au><au>Feng, Zhe-Chuan</au><au>Chen, Jin-Li</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Infrared reflectance of GaN films grown on Si(001) substrates</atitle><jtitle>Journal of applied physics</jtitle><date>2001-06-01</date><risdate>2001</risdate><volume>89</volume><issue>11</issue><spage>6165</spage><epage>6170</epage><pages>6165-6170</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</abstract><cop>United States</cop><pub>The American Physical Society</pub><doi>10.1063/1.1368162</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2001-06, Vol.89 (11), p.6165-6170
issn 0021-8979
1089-7550
language eng
recordid cdi_osti_scitechconnect_40203735
source AIP Journals Complete; AIP Digital Archive
subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
FINE STRUCTURE
MICROSTRUCTURE
PHYSICS
PROBES
SCANNING ELECTRON MICROSCOPY
SILICON
SIMULATION
SPECTRA
SPECTROSCOPY
SUBSTRATES
THIN FILMS
title Infrared reflectance of GaN films grown on Si(001) substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T06%3A15%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Infrared%20reflectance%20of%20GaN%20films%20grown%20on%20Si(001)%20substrates&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Zhang,%20Xiong&rft.date=2001-06-01&rft.volume=89&rft.issue=11&rft.spage=6165&rft.epage=6170&rft.pages=6165-6170&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1368162&rft_dat=%3Ccrossref_osti_%3E10_1063_1_1368162%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true