Infrared reflectance of GaN films grown on Si(001) substrates
GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model...
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Veröffentlicht in: | Journal of applied physics 2001-06, Vol.89 (11), p.6165-6170 |
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creator | Zhang, Xiong Hou, Yong-Tian Feng, Zhe-Chuan Chen, Jin-Li |
description | GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. |
doi_str_mv | 10.1063/1.1368162 |
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Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1368162</identifier><language>eng</language><publisher>United States: The American Physical Society</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; FINE STRUCTURE ; MICROSTRUCTURE ; PHYSICS ; PROBES ; SCANNING ELECTRON MICROSCOPY ; SILICON ; SIMULATION ; SPECTRA ; SPECTROSCOPY ; SUBSTRATES ; THIN FILMS</subject><ispartof>Journal of applied physics, 2001-06, Vol.89 (11), p.6165-6170</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</citedby><cites>FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/40203735$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Xiong</creatorcontrib><creatorcontrib>Hou, Yong-Tian</creatorcontrib><creatorcontrib>Feng, Zhe-Chuan</creatorcontrib><creatorcontrib>Chen, Jin-Li</creatorcontrib><title>Infrared reflectance of GaN films grown on Si(001) substrates</title><title>Journal of applied physics</title><description>GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>FINE STRUCTURE</subject><subject>MICROSTRUCTURE</subject><subject>PHYSICS</subject><subject>PROBES</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SILICON</subject><subject>SIMULATION</subject><subject>SPECTRA</subject><subject>SPECTROSCOPY</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAUhC0EEqUw8A8ssdAh5T27jp2BAVVQKlUwALPlOO9BUJsgOwjx7wlqp1u-O92dEJcIc4RS3-AcdemwVEdiguCqwhoDx2ICoLBwla1OxVnOnwCITlcTcbvuOIVEjUzEW4pD6CLJnuUqPElut7ss31P_08m-ky_t9eibyfxd5yGFgfK5OOGwzXRx0Kl4e7h_XT4Wm-fVenm3KaIyZijYMLgmVMrVNSM7ClYhl5FVaWOsCRrSxrENxpQUAmLgkY5EC8uandZTcbXP7fPQ-hzbgeJH7LtuLOwXoEBbbUZqtqdi6nMe9_iv1O5C-vUI_v8dj_7wjv4DmAtWAg</recordid><startdate>20010601</startdate><enddate>20010601</enddate><creator>Zhang, Xiong</creator><creator>Hou, Yong-Tian</creator><creator>Feng, Zhe-Chuan</creator><creator>Chen, Jin-Li</creator><general>The American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20010601</creationdate><title>Infrared reflectance of GaN films grown on Si(001) substrates</title><author>Zhang, Xiong ; Hou, Yong-Tian ; Feng, Zhe-Chuan ; Chen, Jin-Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c255t-f5f08da928bbf1f8ea721f6cf267ccbe0de358f7a556eaa11afda9cee47f3f833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>FINE STRUCTURE</topic><topic>MICROSTRUCTURE</topic><topic>PHYSICS</topic><topic>PROBES</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SILICON</topic><topic>SIMULATION</topic><topic>SPECTRA</topic><topic>SPECTROSCOPY</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Xiong</creatorcontrib><creatorcontrib>Hou, Yong-Tian</creatorcontrib><creatorcontrib>Feng, Zhe-Chuan</creatorcontrib><creatorcontrib>Chen, Jin-Li</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Xiong</au><au>Hou, Yong-Tian</au><au>Feng, Zhe-Chuan</au><au>Chen, Jin-Li</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Infrared reflectance of GaN films grown on Si(001) substrates</atitle><jtitle>Journal of applied physics</jtitle><date>2001-06-01</date><risdate>2001</risdate><volume>89</volume><issue>11</issue><spage>6165</spage><epage>6170</epage><pages>6165-6170</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon.</abstract><cop>United States</cop><pub>The American Physical Society</pub><doi>10.1063/1.1368162</doi><tpages>6</tpages></addata></record> |
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subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS FINE STRUCTURE MICROSTRUCTURE PHYSICS PROBES SCANNING ELECTRON MICROSCOPY SILICON SIMULATION SPECTRA SPECTROSCOPY SUBSTRATES THIN FILMS |
title | Infrared reflectance of GaN films grown on Si(001) substrates |
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