Conductance peak splitting in hole transport through a SiGe double quantum dot

We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2001-06, Vol.78 (23), p.3624-3626
Hauptverfasser:	Cain, Paul A., Ahmed, Haroon, Williams, David A.
Format:	Artikel
Sprache:	eng
Schlagworte:	CAPACITANCE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DIMENSIONS OSCILLATIONS PHYSICS SIMULATION TRANSPORT
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	3626
container_issue	23
container_start_page	3624
container_title	Applied physics letters
container_volume	78
creator	Cain, Paul A. Ahmed, Haroon Williams, David A.
description	We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value.
doi_str_mv	10.1063/1.1377320
format	Article
fullrecord	<record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_40203173</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1377320</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-ddb24d2bf145bdf0a8e633fceebc5e1cdc54c2bffce6b762c01b5516130dcc273</originalsourceid><addsrcrecordid>eNotkDFPwzAUhC0EEqUw8A8sMTGk-PnFcRlRBQWpggGYI-fZaQKtHWxn4N8T1E6nu-90wzF2DWIBosI7WABqjVKcsBkIrQsEWJ6ymRACi-pewTm7SOlrskoiztjrKng7UjaeHB-c-eZp2PU5937Le8-7sHM8R-PTEGLmuYth3Hbc8Pd-7bgNYzPxn9H4PO4nmy_ZWWt2yV0ddc4-nx4_Vs_F5m39snrYFIQScmFtI0srmxZK1dhWmKWrEFtyriHlgCypkiY8JVWjK0kCGqWgAhSWSGqcs5vDbki5rxP12VFHwXtHuS6FFAgap9btoUUxpBRdWw-x35v4W4Oo_--qoT7ehX-7kF17</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conductance peak splitting in hole transport through a SiGe double quantum dot</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Cain, Paul A. ; Ahmed, Haroon ; Williams, David A.</creator><creatorcontrib>Cain, Paul A. ; Ahmed, Haroon ; Williams, David A.</creatorcontrib><description>We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1377320</identifier><language>eng</language><publisher>United States: The American Physical Society</publisher><subject>CAPACITANCE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DIMENSIONS ; OSCILLATIONS ; PHYSICS ; SIMULATION ; TRANSPORT</subject><ispartof>Applied physics letters, 2001-06, Vol.78 (23), p.3624-3626</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-ddb24d2bf145bdf0a8e633fceebc5e1cdc54c2bffce6b762c01b5516130dcc273</citedby><cites>FETCH-LOGICAL-c321t-ddb24d2bf145bdf0a8e633fceebc5e1cdc54c2bffce6b762c01b5516130dcc273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/40203173$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cain, Paul A.</creatorcontrib><creatorcontrib>Ahmed, Haroon</creatorcontrib><creatorcontrib>Williams, David A.</creatorcontrib><title>Conductance peak splitting in hole transport through a SiGe double quantum dot</title><title>Applied physics letters</title><description>We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value.</description><subject>CAPACITANCE</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DIMENSIONS</subject><subject>OSCILLATIONS</subject><subject>PHYSICS</subject><subject>SIMULATION</subject><subject>TRANSPORT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAUhC0EEqUw8A8sMTGk-PnFcRlRBQWpggGYI-fZaQKtHWxn4N8T1E6nu-90wzF2DWIBosI7WABqjVKcsBkIrQsEWJ6ymRACi-pewTm7SOlrskoiztjrKng7UjaeHB-c-eZp2PU5937Le8-7sHM8R-PTEGLmuYth3Hbc8Pd-7bgNYzPxn9H4PO4nmy_ZWWt2yV0ddc4-nx4_Vs_F5m39snrYFIQScmFtI0srmxZK1dhWmKWrEFtyriHlgCypkiY8JVWjK0kCGqWgAhSWSGqcs5vDbki5rxP12VFHwXtHuS6FFAgap9btoUUxpBRdWw-x35v4W4Oo_--qoT7ehX-7kF17</recordid><startdate>20010604</startdate><enddate>20010604</enddate><creator>Cain, Paul A.</creator><creator>Ahmed, Haroon</creator><creator>Williams, David A.</creator><general>The American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20010604</creationdate><title>Conductance peak splitting in hole transport through a SiGe double quantum dot</title><author>Cain, Paul A. ; Ahmed, Haroon ; Williams, David A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-ddb24d2bf145bdf0a8e633fceebc5e1cdc54c2bffce6b762c01b5516130dcc273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CAPACITANCE</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DIMENSIONS</topic><topic>OSCILLATIONS</topic><topic>PHYSICS</topic><topic>SIMULATION</topic><topic>TRANSPORT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cain, Paul A.</creatorcontrib><creatorcontrib>Ahmed, Haroon</creatorcontrib><creatorcontrib>Williams, David A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cain, Paul A.</au><au>Ahmed, Haroon</au><au>Williams, David A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conductance peak splitting in hole transport through a SiGe double quantum dot</atitle><jtitle>Applied physics letters</jtitle><date>2001-06-04</date><risdate>2001</risdate><volume>78</volume><issue>23</issue><spage>3624</spage><epage>3626</epage><pages>3624-3626</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value.</abstract><cop>United States</cop><pub>The American Physical Society</pub><doi>10.1063/1.1377320</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 2001-06, Vol.78 (23), p.3624-3626
issn	0003-6951 1077-3118
language	eng
recordid	cdi_osti_scitechconnect_40203173
source	AIP Journals Complete; AIP Digital Archive
subjects	CAPACITANCE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DIMENSIONS OSCILLATIONS PHYSICS SIMULATION TRANSPORT
title	Conductance peak splitting in hole transport through a SiGe double quantum dot
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T01%3A23%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Conductance%20peak%20splitting%20in%20hole%20transport%20through%20a%20SiGe%20double%20quantum%20dot&rft.jtitle=Applied%20physics%20letters&rft.au=Cain,%20Paul%20A.&rft.date=2001-06-04&rft.volume=78&rft.issue=23&rft.spage=3624&rft.epage=3626&rft.pages=3624-3626&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1377320&rft_dat=%3Ccrossref_osti_%3E10_1063_1_1377320%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true