Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates

We have epitaxially stabilized a series of monoclinic (AlxGa1−x−yIny)2O3 alloys by careful choice of molecular beam epitaxy growth conditions, which balance alloy growth with suboxide desorption. The films are pseudomorphic to (010) β-Ga2O3 substrates at thicknesses up to 150 nm with compositions ra...

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Veröffentlicht in:	Applied physics letters 2024-10, Vol.125 (17)
Hauptverfasser:	Schaefer, Stephen, Smeaton, Michelle, Egbo, Kingsley, Hasan, Syed, Callahan, William, Teeter, Glenn, Zakutayev, Andriy, Tellekamp, M. Brooks
Format:	Artikel
Sprache:	eng
Schlagworte:	ATOMIC AND MOLECULAR PHYSICS band gap Charge density chemical properties Conduction bands crystal structure electronic band structure Energy gap Epitaxial growth epitaxy Gallium oxides Inclusions INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY Lattice matching Lattice parameters Molecular beam epitaxy Monoclinic lattice optical absorption oxides Parameter identification Phase separation Scanning transmission electron microscopy Substrates surface and interface chemistry transistors transmission electron microscopy
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