Isolation of Single Donors in ZnO

The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium do...

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Veröffentlicht in:	Physical review letters 2024-10, Vol.133 (14), p.146902, Article 146902
Hauptverfasser:	Hansen, Ethan R, Niaouris, Vasileios, Matthews, Bethany E, Zimmermann, Christian, Wang, Xingyi, Kolodka, Roman, Vines, Lasse, Spurgeon, Steven R, Fu, Kai-Mei C
Format:	Artikel
Sprache:	eng
Schlagworte:	Confocal imaging Defects Excitons Focused ion beam II-VI semiconductors Impurities Photoluminescence Quantum information with solid state qubits Radiation damage Time-resolved photoluminescence Wide band gap systems Wurtzite
Online-Zugang:	Volltext
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