Thermodynamic origin of nonvolatility in resistive memory

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design devic...

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Veröffentlicht in:	Matter 2024-11, Vol.7 (11), p.3970-3993
Hauptverfasser:	Li, Jingxian, Appachar, Anirudh, Peczonczyk, Sabrina L., Harrison, Elisa T., Ievlev, Anton V., Hood, Ryan, Shin, Dongjae, Yoo, Sangmin, Roest, Brianna, Sun, Kai, Beckmann, Karsten, Popova, Olya, Chiang, Tony, Wahby, William S., Jacobs-Godrim, Robin B., Marinella, Matthew J., Maksymovych, Petro, Heron, John T., Cady, Nathaniel, Lu, Wei D., Kumar, Suhas, Talin, A. Alec, Sun, Wenhao, Li, Yiyang
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous MATERIALS SCIENCE memristor oxygen diffusion phase separation phase-field model retention
Online-Zugang:	Volltext
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