Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping
This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed t...
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| Veröffentlicht in: | Journal of applied physics 2024-05, Vol.135 (20) |
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| creator | Xu, Zhiyu Daeumer, Matthias A. Cho, Minkyu Yoo, Jae-Hyuck Detchprohm, Theeradetch Bakhtiary-Noodeh, Marzieh Shao, Qinghui Laurence, Ted A. Key, Daryl Letts, Edward Hashimoto, Tadao Dupuis, Russell D. Shen, Shyh-Chiang |
| description | This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects. |
| doi_str_mv | 10.1063/5.0208578 |
| format | Article |
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Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0208578</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Breakdown ; Crystallographic defects ; Defects ; Energy gap ; ENGINEERING ; Epitaxy ; Gallium nitrides ; Homojunctions ; Impact analysis ; Mapping ; Material properties ; Nanotechnology ; Nondestructive testing ; Photoluminescence ; PIN diode ; PIN diodes ; Rectifier ; Rectifiers ; Room temperature ; Semiconductors ; Substrates</subject><ispartof>Journal of applied physics, 2024-05, Vol.135 (20)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-4027990d98da1d7af97d9f232e6e0dfe17d1346242ab7c1524bcf5b2c2ceaaba3</cites><orcidid>0000-0003-1474-779X ; 0000-0003-2091-5788 ; 0000-0002-4581-4433 ; 0009-0000-8826-4921 ; 0000-0003-4691-1208 ; 0009-0004-0085-8768 ; 0000-0002-7270-1688 ; 0000-0001-5844-0015 ; 0000-0002-1994-9553 ; 0000-0002-0006-2063 ; 0000-0002-0208-424X ; 0009000400858768 ; 0009000088264921 ; 0000000346911208 ; 0000000320915788 ; 0000000219949553 ; 0000000272701688 ; 000000020208424X ; 0000000158440015 ; 0000000200062063 ; 000000031474779X ; 0000000245814433</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/2438186$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Xu, Zhiyu</creatorcontrib><creatorcontrib>Daeumer, Matthias A.</creatorcontrib><creatorcontrib>Cho, Minkyu</creatorcontrib><creatorcontrib>Yoo, Jae-Hyuck</creatorcontrib><creatorcontrib>Detchprohm, Theeradetch</creatorcontrib><creatorcontrib>Bakhtiary-Noodeh, Marzieh</creatorcontrib><creatorcontrib>Shao, Qinghui</creatorcontrib><creatorcontrib>Laurence, Ted A.</creatorcontrib><creatorcontrib>Key, Daryl</creatorcontrib><creatorcontrib>Letts, Edward</creatorcontrib><creatorcontrib>Hashimoto, Tadao</creatorcontrib><creatorcontrib>Dupuis, Russell D.</creatorcontrib><creatorcontrib>Shen, Shyh-Chiang</creatorcontrib><creatorcontrib>Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)</creatorcontrib><title>Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping</title><title>Journal of applied physics</title><description>This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.</description><subject>Breakdown</subject><subject>Crystallographic defects</subject><subject>Defects</subject><subject>Energy gap</subject><subject>ENGINEERING</subject><subject>Epitaxy</subject><subject>Gallium nitrides</subject><subject>Homojunctions</subject><subject>Impact analysis</subject><subject>Mapping</subject><subject>Material properties</subject><subject>Nanotechnology</subject><subject>Nondestructive testing</subject><subject>Photoluminescence</subject><subject>PIN diode</subject><subject>PIN diodes</subject><subject>Rectifier</subject><subject>Rectifiers</subject><subject>Room temperature</subject><subject>Semiconductors</subject><subject>Substrates</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp90UtP3DAQAGCrKlK30AP_wGpPrRSwnYfjY4sorIQWDpSrNXHGrCFrp54saE_8dYKWM6c5zKd5MnYsxYkUTXlanwgl2lq3n9hCitYUuq7FZ7YQQsmiNdp8YV-JHoSQsi3Ngr38yQiPfXqO3K0hg5swB5qCIw4Rhh0F4snzx7vCDUDEnzDPSRj4Baz4zXLFM7op-ICZeLfjz-AxFwM-4cBp2xUdxP4eRj6u05SG7SZEJIfRId_AOIZ4f8QOPAyE397jIfv39_z27LK4ur5Ynv2-KpyqqqmohNLGiN60Pchegze6N16VChsUvUepe1lWjaoUdNrJWlWd83WnnHII0EF5yL7v66Z5OUsuTOjWLsU4j29VVbaybWb0Y4_GnP5vkSb7kLZ5PgPZUjRKV2puMaufe-VyIsro7ZjDBvLOSmHfnmBr-_6E2f7a27eOMIUUP8CvH6eIYg</recordid><startdate>20240528</startdate><enddate>20240528</enddate><creator>Xu, Zhiyu</creator><creator>Daeumer, Matthias A.</creator><creator>Cho, Minkyu</creator><creator>Yoo, Jae-Hyuck</creator><creator>Detchprohm, Theeradetch</creator><creator>Bakhtiary-Noodeh, Marzieh</creator><creator>Shao, Qinghui</creator><creator>Laurence, Ted A.</creator><creator>Key, Daryl</creator><creator>Letts, Edward</creator><creator>Hashimoto, Tadao</creator><creator>Dupuis, Russell D.</creator><creator>Shen, Shyh-Chiang</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0003-1474-779X</orcidid><orcidid>https://orcid.org/0000-0003-2091-5788</orcidid><orcidid>https://orcid.org/0000-0002-4581-4433</orcidid><orcidid>https://orcid.org/0009-0000-8826-4921</orcidid><orcidid>https://orcid.org/0000-0003-4691-1208</orcidid><orcidid>https://orcid.org/0009-0004-0085-8768</orcidid><orcidid>https://orcid.org/0000-0002-7270-1688</orcidid><orcidid>https://orcid.org/0000-0001-5844-0015</orcidid><orcidid>https://orcid.org/0000-0002-1994-9553</orcidid><orcidid>https://orcid.org/0000-0002-0006-2063</orcidid><orcidid>https://orcid.org/0000-0002-0208-424X</orcidid><orcidid>https://orcid.org/0009000400858768</orcidid><orcidid>https://orcid.org/0009000088264921</orcidid><orcidid>https://orcid.org/0000000346911208</orcidid><orcidid>https://orcid.org/0000000320915788</orcidid><orcidid>https://orcid.org/0000000219949553</orcidid><orcidid>https://orcid.org/0000000272701688</orcidid><orcidid>https://orcid.org/000000020208424X</orcidid><orcidid>https://orcid.org/0000000158440015</orcidid><orcidid>https://orcid.org/0000000200062063</orcidid><orcidid>https://orcid.org/000000031474779X</orcidid><orcidid>https://orcid.org/0000000245814433</orcidid></search><sort><creationdate>20240528</creationdate><title>Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping</title><author>Xu, Zhiyu ; 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Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0208578</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-1474-779X</orcidid><orcidid>https://orcid.org/0000-0003-2091-5788</orcidid><orcidid>https://orcid.org/0000-0002-4581-4433</orcidid><orcidid>https://orcid.org/0009-0000-8826-4921</orcidid><orcidid>https://orcid.org/0000-0003-4691-1208</orcidid><orcidid>https://orcid.org/0009-0004-0085-8768</orcidid><orcidid>https://orcid.org/0000-0002-7270-1688</orcidid><orcidid>https://orcid.org/0000-0001-5844-0015</orcidid><orcidid>https://orcid.org/0000-0002-1994-9553</orcidid><orcidid>https://orcid.org/0000-0002-0006-2063</orcidid><orcidid>https://orcid.org/0000-0002-0208-424X</orcidid><orcidid>https://orcid.org/0009000400858768</orcidid><orcidid>https://orcid.org/0009000088264921</orcidid><orcidid>https://orcid.org/0000000346911208</orcidid><orcidid>https://orcid.org/0000000320915788</orcidid><orcidid>https://orcid.org/0000000219949553</orcidid><orcidid>https://orcid.org/0000000272701688</orcidid><orcidid>https://orcid.org/000000020208424X</orcidid><orcidid>https://orcid.org/0000000158440015</orcidid><orcidid>https://orcid.org/0000000200062063</orcidid><orcidid>https://orcid.org/000000031474779X</orcidid><orcidid>https://orcid.org/0000000245814433</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Breakdown Crystallographic defects Defects Energy gap ENGINEERING Epitaxy Gallium nitrides Homojunctions Impact analysis Mapping Material properties Nanotechnology Nondestructive testing Photoluminescence PIN diode PIN diodes Rectifier Rectifiers Room temperature Semiconductors Substrates |
| title | Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping |
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