Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes
We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectr...
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| Veröffentlicht in: | Applied physics letters 2023-05, Vol.122 (21) |
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| container_title | Applied physics letters |
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| creator | Ghosh, Subhajit Mudiyanselage, Dinusha Herath Rumyantsev, Sergey Zhao, Yuji Fu, Houqiang Goodnick, Stephen Nemanich, Robert Balandin, Alexander A. |
| description | We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment. |
| doi_str_mv | 10.1063/5.0153495 |
| format | Article |
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The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0153495</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Defects ; Electric fields ; LF noise ; Physics ; Potential barriers ; Quality assessment ; Schottky diodes ; Wide bandgap semiconductors</subject><ispartof>Applied physics letters, 2023-05, Vol.122 (21)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Defects Electric fields LF noise Physics Potential barriers Quality assessment Schottky diodes Wide bandgap semiconductors |
| title | Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes |
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